Datasheet FDS8935 Datasheet (Fairchild)

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Page 1

FDS8935 Dual P-Channel PowerTrench

Pin 1

SO-8

4 3 2 1

5 6 7 8

FDS8935

Dual P-Channel PowerTrench® MOSFET

-80 V, -2.1 A, 183 mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  High power and current handling capability in a widely used

surface mount package

 100% UIL Tested  RoHS Compliant

= 183 mΩ at V

DS(on)

= 247 mΩ at V

DS(on)

= -10 V, ID = -2.1 A

= -4.5 V, ID = -1.9 A

DS(on)

General Description

 This P-channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench® process that has been optimized for r ruggedness.

Applications

 Load Switch  Synchronous Rectifier

November 2010

, switching performance and

DS(on)

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -80 V Gate to Source Voltage ±20 V Drain Current -Continuous -2.1

-Pulsed -10 Single Pulse Avalanche Energy (Note 3) 37 mJ Power Dissipation TA = 25 °C (Note 1a) 3.1 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 1.6

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case (Note 1) 40 Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS8935 FDS8935 SO-8 13 ’’ 12 mm 2500 units

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Page 2

FDS8935 Dual P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -80 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -64 V, V Gate to Source Leakage Current VGS = ±20 V, V

= -250 μA, referenced to 25 °C -61 mV/°C

= 0 V -1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-1-1.8-3V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= -250 μA, referenced to 25 °C 5 mV/°C

= -10 V, ID = -2.1 A 148 183

= -4.5 V, ID = -1.9 A 176 247

= -10 V , ID = -2.1 A,TJ = 125 °C 249 308

Forward Transconductance VDS = -10 V, ID = -2.1 A 6.4 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 47 63 pF Reverse Transfer Capacitance 24 36 pF

= -40 V, VGS = 0 V,

f = 1MHz

Gate Resistance 6 Ω

661 879 pF

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 22 36 ns

= -40 V, ID = -2.1 A,

= -10 V, R

GEN

= 6 Ω

Fall Time 310ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 1.6 nC

= 0 V to -10 V

= 0 V to -5 V 7 10 nC

= -40 V,

= -2.1 A

Gate to Drain “Miller” Charge 2.6 nC

510ns

13 19 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

3. Starting T

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 34 54 nC

= 25 °C, L = 3.0 mH, IAS = -5.0 A, VDD = -80V, VGS = -10V.

a)78 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = -2.1 A (Note 2) -1.8 -1.3

= 0 V, IS = -1.3 A (Note 2) -0.8 -1.2

= -2.1 A, di/dt = 300 A/μs

θJC

b)135 °C/W when mounted on a minimun pad

19 30 ns

is guaranteed by design while R

is determined by

θCA

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FDS8935 Dual P-Channel PowerTrench

012345

VGS = -3.5 V

VGS = -10 V

VGS = -4 V

VGS = -3 V

VGS = -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

-I

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0246810

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = -3.5 V

VGS = -5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -4 V

VGS = -3 V

= -10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = - 2.1 A V

= -10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

246810

200

400

600

800

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = 150 oC

= 25

ID = -2.1 A

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

-VGS, GATE TO S OURCE V OLTAGE (V )

12345

TJ = 25 oC

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VO LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

-I

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

MOSFET

Figu r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDS8935 Dual P-Channel PowerTrench

0 3 6 9 12 15

ID = -2.1 A

VDD = -60 V

= -20 V

-V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -40 V

0.1 1 10 100

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.1 1 10

1.0

1.2

1.4

1.6

1.8

2.0

2.2

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

-I

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

Limited by package

θJA

= 78 oC/W

= -4.5 V

= -10 V

-I

, DRAIN CURRENT (A)

, Ambient TEMPERA TU R E (

0.1 1 10 100 300

0.005

0.01

0.1

THIS AR E A IS LIMITED BY r

DS(on)

100 us

1 ms

100 ms

1 s

10 s

10 ms

SINGLE PULSE T

= MAX RATED

θJA

= 135

C/W

TA = 25

-I

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

10-410-310-210

-1

110

100 1000

0.5

100

1000

SINGLE PULSE R

θJA

= 135 oC/W

= 25 oC

VGS = -10 V

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

Figure 11.

Operating Area

Forward Bias Safe

Figure 10.

Max imum C onti n uous D rain

Current vs Ambient Temperature

Fi gur e 12. Sing le P uls e Maximum

Power Dissipation

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FDS8935 Dual P-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 135 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

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Page 6

TRADEMARKS

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconduct or and/or its global sub sidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™

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MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

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™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDS8935 Dual P-Channel PowerTrench

MOSFET

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As used here in:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I48