Datasheet FDS89161 Datasheet (Fairchild)

Download

Page 1

FDS89161

Q2Q1Q2

Pin 1

SO-8

Dual N-Channel PowerTrench® MOSFET

100 V, 2.7 A, 105 mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  High power and current handling capability in a widely used

surface mount package

 100% UIL Tested  RoHS Compliant

= 105 mΩ at V

DS(on)

= 171 mΩ at V

DS(on)

= 10 V, ID = 2.7 A

= 6 V, ID = 2.1 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for ruggedness

Applications

 Synchronous Rectifier  Primary Switch For Bridge Topology

FDS89161 Dual N-Channel PowerTrench

June 2011

process that has

, switching performance and

DS(on)

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous 2.7

-Pulsed 15 Single Pulse Avalanche Energy (Note 3) 13 mJ Power Dissipation TC = 25 °C 31 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note1a) 1.6

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS89161 FDS89161 SO-8 13 ’’ 12 mm 2500 units

Thermal Resistance, Junction to Case (Note 1) 4.0 Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

Page 2

FDS89161 Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 67 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA234V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -9 mV/°C

= 10 V, ID = 2.7 A 86 105

= 6 V, ID = 2.1 A 120 171

= 10 V, ID = 2.7 A, TJ = 125 °C 144 176

Forward Transconductance VDS = 10 V, ID = 2.7 A 5 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 43 58 pF Reverse Transfer Capacitance 3 5 pF

= 50 V, VGS = 0 V,

f = 1MHz

Gate Resistance 1 Ω

158 210 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g(TOT) g(TOT) gs gd

Turn-On Delay Time Rise Time 1.3 10 ns Turn-Off Delay Time 7.3 15 ns

= 50 V, ID = 2.7 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 1.9 10 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 0.8 nC

= 0 V to 10 V

= 0 V to 5 V 1.7 2.4

= 2.7 A

= 50 V,

Gate to Drain “Miller” Charge 0.8 nC

4.2 10 ns

34.1nC

mΩV

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS = 2.7 A (Note 2) 0.85 1.3

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 i n. boar d of FR-4 ma terial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 21 34 nC

a) 78°C/W when mounted on a 1 in pad of 2 oz copper

= 0 V, IS = 2 A (Note 2) 0.82 1.2

= 2.7 A, di/dt = 100 A/μs

θJC

34 54 ns

is guaranteed by design whil e R

b) 135°C/W when mounted on a minimun pad

is determined by

θCA

Page 3

FDS89161 Dual N-Channel PowerTrench

01234

VGS = 5 V

VGS = 7 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 5.5 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

03691215

VGS = 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 5.5 V

VGS = 6 V

VGS = 7 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 2.7 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

45678910

100

200

300

400

500

TJ = 125 oC

ID = 2.7 A

TJ = 25 oC

, GATE TO SOURCE VO LTAG E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

23456789

TJ = 150 oC

= 5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE T O SOURCE VOLTA GE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics ( N-Channel) T

Figure 1.

On-Region Characteristics Figure 2.

= 25°C unless otherwise noted

vs Drain Current and Gate Voltage

Normali z e d O n - R esistance

MOSFET

Fig u r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

Page 4

FDS89161 Dual N-Channel PowerTrench

01234

ID = 2.7 A

VDD = 50 V

= 25 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 65 V

0.1 1 10 100

100

300

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 2

1.0

1.5

2.0

2.5

3.0

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN A V ALANCHE ( ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 6 V

θJA

= 78 oC/W

= 10 V

, DRAIN CURRENT (A)

, Ambient TEMPERATURE (

0.1 1 10 100 400

0.005

0.01

0.1

10 s

100 us

10 ms

1 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAG E (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 135

C/W

= 25

10-410-310-210

-1

11010210

0.5

100

700

SINGLE PULSE R

θJA

= 135

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULS E WIDTH (s ec)

Typical Characteristics ( N-Channel) T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 11. Forward Bias Safe

erating Area

Figure 10.

Ma xim um C ont inu ous Dra in

Current vs Ambient Temperature

Figure 12.

Si ngle P ulse M aximum

Power Dissipation

Page 5

FDS89161 Dual N-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 135 oC/W

DUTY CYCLE-DESCEND ING O R D ER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics ( N-Channel) T

Figure 13.

Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

MOSFET

Page 6

TRADEMARKS

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

® ®

FPS™ F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ ®*

™

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDS89161 Dual N-Channel PowerTrench

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b ) support or su stain life, and (c) whose failure to perform when properly used in acco rdance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All ma nufactures of semiconductor products are exper iencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many proble ms su ch as loss of brand repu tation , substa ndard pe rfo rmance, f aile d application, and increased cost of production and manufacturing delays. Fairchild is takin g strong measures to protect ourselves and our customers from th e proliferation of counterfeit parts. Fairchild str ongly encourages customers t o purchase Fairchild par ts either d irectly from Fairchild o r from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping t his practice by buying direct or from authorized distributor s.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specificatio ns for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child Semiconductor. The datashe et is for reference information only.

Rev. I54

FDS89161 Rev. C2