Datasheet FDS8882 Datasheet (Fairchild)

FDS8882

N-Channel PowerTrench® MOSFET

30 V, 9 A, 20.0 mΩ
Features

 Max r
 Max r
 High performance trench technology for extremely low r

and fast switching

 High power and current handling capability
 Termination is Lead-free and RoHS Compliant

= 20.0 mΩ at V

DS(on)

= 22.5 mΩ at V

DS(on)

= 10 V, ID = 9 A

GS

= 4.5 V, ID = 8 A

GS

DS(on)

General Description

The FDS8882 has been designed to minimize losses in power
conversion application. Advancements in both
package technologies have been combined to offer the lowest
r

while maintaining excellent switching performance.

DS(on)

Applications

 Notebook System Regulators
 DC/DC Converters

December 2008

silicon and

FDS8882 N-Channel PowerTrench

®

MOSFET

D

D

D

D

SO-8

Pin 1

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 9

-Pulsed 21
Single Pulse Avalanche Energy (Note 3) 32 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

S

= 25 °C unless otherwise noted

A

G

S

S

= 25 °C (Note 1b) 1.0

A

5

D

6

D

7

D

8

D

G

4

S

3

S

2

1

S

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDS8882 FDS8882 SO8 13 “ 12 mm 2500 units

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C

1

www.fairchildsemi.com

FDS8882 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 µA, referenced to 25 °C 4 mV/°C

D

= 0 V 1 µA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.7 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 µA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 9 A 13.2 20.0

GS

= 4.5 V, ID = 8 A 16.6 22.5

GS

= 10 V, ID = 9 A, TJ =125 °C 18.5 28.0

V

GS

Forward Transconductance VDS = 5 V, ID = 9 A 36 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 138 185 pF
Reverse Transfer Capacitance 88 135 pF
Gate Resistance 1.8 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 19 35 ns
Fall Time 410ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2.2 nC
Gate to Drain “Miller” Charge 2.8 nC

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

VDD = 15 V, ID = 9 A,
V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V 8 11 nC

GS

GEN

= 6 Ω

VDD = 15 V,
I

= 9 A

D

707 940 pF

714ns

14 20 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounte d on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. Starting T

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 6 12 nC

= 25 °C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V.

J

a) 50 °C/W whe n mounted on a
1 in2 pad of 2 oz copper.

V

= 0 V, IS = 9 A 0.8 1.2

GS

= 0 V, IS = 2.1 A 0.7 1.2

V

GS

= 9 A, di/dt = 100 A/µs

I

F

2

θJC

17 31 ns

is guaranteed by design while R

b) 125 °C/W when mounted on a
minimum pad.

V

is determined by

θCA

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FDS8882 N-Channel PowerTrench

Typical Characteristics T

21

18

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

0 0.5 1.0 1.5 2.0

Figure 1.

1.6

ID = 9 A
V

= 10 V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

VGS = 10 V
VGS = 6 V
VGS = 4.5 V

VGS = 3.5 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

T

, JUNCTION TEMPERATURE (

J

= 25 °C unless otherwise noted

J

VGS = 3 V

o

C)

3.0

VGS = 3 V

2.5

V

= 3.5 V

NORMALIZED

2.0

1.5

VGS = 6 V

GS

V

GS

= 4.5 V

1.0

PULSE DURATION = 80 µs

DRAIN TO SOURCE ON-RESISTANCE

DUTY CYCLE = 0.5% MAX

0.5
036912151821

I

, DRAIN CURRENT (A)

D

V

= 10 V

GS

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

50

40

(mΩ)

30

DRAIN TO

,

20

DS(on)

r

10

SOURCE ON-RESISTANCE

TJ = 25 oC

0

246810

V

, GATE TO SOURCE VOL TA G E (V)

GS

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

ID = 9 A

TJ = 125 oC

®

MOSFET

Fig ure 3. Norma lized O n Res istan ce

vs Junction Temperature

21

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

18

V

= 5 V

DS

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

01234

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 150 oC

Figure 5. Transfer Characteristics

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C

Figure 4.

On-Res istance vs Gate to

Source Voltage

30

V

= 0 V

GS

10

TJ = 150 oC

1

TJ = 25 oC

TJ = -55 oC

0.1

, REVERSE DRAIN CURRENT (A)

S

I

0.01

0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

3

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FDS8882 N-Channel PowerTrench

Typical Characteristics T

10

ID = 9 A

8

V

= 10 V

DD

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 3 6 9 12 15

Qg, GATE CHARGE (nC)

Figure 7.

Gate Charge Characteristics Figure 8.

20

10

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10 100

tAV, TIME IN AVALA NCHE (ms)

VDD = 20 V

TJ = 125 oC

= 25 °C unless otherwise noted

J

VDD = 15 V

TJ = 25 oC

TJ = 100 oC

2000

1000

100

CAPACITANCE (pF)

f = 1 MHz
V

= 0 V

GS

20

0.1 1 10 30

VDS, DRAIN TO SOURCE VO LTAGE (V)

Capacitance vs Drain

to Source Voltage

10

V

= 10 V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

25 50 75 100 125 150

GS

V

= 4.5 V

GS

R

= 50 oC/W

θJA

T

, AMBIENT TEMPERATURE (

A

o

C)

C

iss

C

oss

C

rss

®

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

100

THIS AR E A IS
LIMITED BY r

DS(on)

10

1

, DRAIN CURRENT (A)

0.1

D

I

0.01

0.01 0.1 1 10 1 00

SINGLE PULSE

= MAX RATED

T

J

θJA

= 25

A

= 125

o

o

C

R
T

VDS, DRAIN to SOURCE VOL TAGE (V)

Figure 11. Forward Bias Safe

Operating Area

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C

C/W

Figure 10.

Ma xim um C ont inu ous Dra in

Current vs Ambient Temperature

1000

VGS = 10 V

100 us

1 ms
10 ms
100 ms

1 s
10 s

DC

100

10

), PEAK TRANSIENT POWER (W)

1

PK

P(

0.1
10-410-310-210-1110

Figure 12.

t, PULS E WIDTH (sec)

Si ngle P ulse M aximum

SINGLE PULSE
R

T

θJA

= 25

A

= 125

o

o

C/W

C

100 1000

Power Dissipation

4

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FDS8882 N-Channel PowerTrench

Typical Characteristics T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

10

-3

10

Figure 13.

NORMALIZED THERMAL

θJA

Z

IMPEDANCE,

0.001

0.1

0.01

= 25 °C unless otherwise noted

J

P

SINGLE PULSE

= 125 oC/W

R

θJA

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (sec)

110

NTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

Junction-to-Ambient Transient Thermal Response Curve

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C

5

www.fairchildsemi.com

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FDS8882 N-Channel PowerTrench

®

MOSFET

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Rev. I37

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C

6

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