Datasheet fds8842nz Datasheet

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FDS8842NZ

N-Channel PowerTrench® MOSFET

40 V, 14.9 A, 7.0 mΩ Features

 Max r  Max r  HBM ESD protection level of 4.4 kV typical(note 3)

 High performance trench technology for extremely low r

and fast switching

 High power and current handling capability  Termination is Lead-free and RoHS Compliant

= 7.0 mΩ at VGS = 10 V, ID = 14.9 A

DS(on)

= 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A

DS(on)

General Description

The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both package technologies have been combined to offer the lowest r

while maintaining excellent switching performance.

DS(on)

Applications

 Synchronous Buck for Notebook Vcore and Server  Notebook Battery  Load Switch

February 2009

silicon and

FDS8842NZ N-Channel Power Trench

MOSFET

SO-8

Pin 1

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 40 V Gate to Source Voltage ±20 V Drain Current -Continuous 14.9

-Pulsed 93 Single Pulse Avalanche Energy (Note 4) 253 mJ Power Dissipation TA = 25 °C (Note 1a) 2.5 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 1.0

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case (Note 1) 25 Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDS8842NZ FDS8842NZ SO8 13 ’’ 12 mm 2500 units

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FDS8842NZ N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 32 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 µA, referenced to 25 °C 35 mV/°C

= 0 V 1 µA

= 0 V ±10 µA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 µA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 14.9 A 5.6 7.0

= 4.5 V, ID = 11.6 A 6.7 11.6

= 10 V, ID = 14.9 A, TJ =125 °C 8.9 11.1

Forward Transconductance VDS = 5 V, ID = 14.9 A 111 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 340 455 pF Reverse Transfer Capacitance 220 330 pF

= 15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance f = 1 MHz 0.8 Ω

2890 3845 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On Delay Time Rise Time 714ns Turn-Off Delay Time 34 54 ns

VDD = 20 V, ID = 14.9 A, V

= 10 V, R

GEN

= 6 Ω

Fall Time 510ns

g g gs gd

Total Gate Charge V Total Gate Charge V Gate to Source Charge 8.6 nC Gate to Drain “Miller” Charge 9.7 nC

= 0 V to 10 V

= 0 V to 5 V 27 38 nC

VDD = 20 V, I

= 14.9 A

13 23 ns

52 73 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS = 14.9 A 0.8 1.2

NOTES:

1. R

is determined with the device m ounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 i n. board o f FR-4 mat erial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

4. Starting T

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 15 27 nC

a) 50 °C/W when m ounted on a 1 in2 pad of 2 oz copper.

= 25 °C, L = 3 mH, IAS = 13 A, VDD = 40 V, VGS = 10 V.

= 0 V, IS = 2.1 A 0.7 1.2

= 14.9 A, di/dt = 100 A/µs

26 42 ns

is guaranteed by design while R

θJC

b) 125 °C/W when mounted on a minimum pad.

is determined by

θCA

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Typical Characteristics T

= 25 °C unless otherwise noted

FDS8842NZ N-Channel Power Trench

VGS = 4.5 V

VGS = 4 V

VGS = 10 V

VGS = 6 V

VGS = 3.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

DRAIN CURRENT (A)

0 0.3 0.6 0.9 1.2 1.5

DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

VGS = 3 V

1.8

ID = 14.9 A

= 10 V

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

JUNCTION TEMPERATURE

(

)

Figur e 3 . No rm alize d O n- Res istan ce

vs Junction Temperature

= 3 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

NORMALIZED

= 4 V

VGS = 4.5 V

VGS = 6 V

DRAIN TO SOURCE ON-RESISTANCE

0 102030405060

DRAIN CURRENT (A)

= 10 V

Nor ma liz ed O n-Res ist ance

vs Drain Current and Gate Voltage

)

Ω

(

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

Figure 4.

TJ = 25 oC

GATE TO S O URCE VO L TAGE (V)

On-Resistance vs Gate to

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 14.9 A

TJ = 125 oC

Source Voltage

MOSFET

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 5 V

, DRAIN CURRENT (A)

01234

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55 oC

Figure 5. Transfer Characteristics

TJ = 150 oC

TJ = 25 oC

= 0 V

TJ = 150 oC

TJ = 25 oC

, REVERSE DRAIN CURRENT (A)

0.1

0.20.40.60.81.01.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drai n Dio de

TJ = -55 oC

Forward Voltage vs Source Current

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FDS8842NZ N-Channel Power Trench

Typical Characteristics T

= 25 °C unless otherwise noted

ID = 14.9 A

VDD = 15 V

= 20 V

VDD = 25 V

, GATE TO SOURCE VOLTAGE (V)

0 102030405060

Qg, GATE CHARGE (nC)

Figure 7.

Gate Charge Characteristics Figure 8.

, AVALANCHE CURRENT (A)

0.001 0.01 0.1 1 10 100 1000

Figure 9.

TJ = 125 oC

tAV, TIME IN AVA LANCHE (m s )

Unclamped Inductive

TJ = 25 oC

Switching Capability

TJ = 100 oC

5000

1000

CAPACITANCE (pF)

f = 1 MHz

= 0 V

100

0.1 1 10 40

VDS, DRAIN TO SOURCE VOLTA GE (V)

Cap aci tan ce v s Dr ain

to Source Voltage

-3

= 0 V

-5

-7

GATE LEAKAGE CURRENT (A)

-9

0 5 10 15 20 25 30

GATE TO SO U RCE VOLTAGE (V)

Figure 10. Igss vs Vgs

TJ = 125 oC

TJ = 25 oC

iss

oss

rss

MOSFET

100

THIS AREA IS LIMITED BY r

, DRAIN CURRENT (A)

0.1

0.01

0.01 0.1 1 10 100

DS(on)

SINGLE PULSE T

= MAX RATED

= 125 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

2000

1 ms

10 ms

100 ms

1 s

10 s DC

200

100

PEAK TRANSIENT POWER (W)

)

(

0.5

-3

1000

VGS = 10 V

-2

t, PULSE WIDTH (sec)

-1

110

SINGLE PULSE

= 125 oC/W

= 25 oC

100 1000

Figure 12. Single Pulse Maximum

Power Dissipation

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FDS8842NZ N-Channel Power Trench

Typical Characteristics T

NORMALIZED THERMAL

0.01

IMPEDANCE,

0.001

0.0005

2 1

0.1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-3

-2

= 25 °C unless otherwise noted

SINGLE PULSE R

= 125 oC/W

-1

t, RECTANGULAR PULSE DURATION (sec)

Figure 13.

Transient Thermal Response Curve

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1/t2

x R

θJA

110

+ T

θJA

100 1000

MOSFET

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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FlashWriter

®*

FPS™ F-PFS™

FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench

PowerXS™

Programmable Active Droop™

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic

TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used herein:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I39