Page 1
FDS8812NZ
N-Channel PowerTrench® MOSFET
30V, 20A, 4.0mΩ
Features
Max r
Max r
HBM ESD protection level of 6.4KV typical (note 3)
High performance trench technology for extremely low r
High power and current handling capability
RoHS compliant
= 4.0mΩ at V
DS(on)
= 4.9mΩ at V
DS(on)
= 10V, ID = 20A
GS
= 4.5V, ID =18A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
November 2008
®
process that has
FDS8812NZ N-Channel PowerTrench
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 20
-Pulsed 80
Single Pulse Avalanche Energy (Note 4) 661 mJ
Power Dissipation (Note 1a) 2.5
Power Dissipation (Note 1b) 1.0
Operating and Storage Junction Temperature Range -55 to +150 °C
S
A
G
S
S
= 25°C unless otherwise noted
D
D
D
D
G
S
S
S
Thermal Characteristics
R
θJC
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a ) 50
Thermal Resistance, Junction to Ambient (Note 1b ) 125
Package Marking and Ordering Information
A
W
°C/WR
Device Marking Device Reel Size Tape Width Quantity
FDS8812NZ FDS8812NZ 13” 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDS8812NZ Rev.C1
1
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FDS8812NZ N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 19 mV/°C
= 0V 1 µA
GS
= 0V ±10 µA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.8 3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5V, ID = 20A 87 S
ID = 250µA, referenced to 25°C –7 mV/°C
VGS = 10V, ID = 20A 3.1 4.0
VGS = 10V, ID = 20A, TJ = 125°C 4.2 5.3
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 945 1260 pF
Reverse Transfer Capacitance 580 870 pF
VDS = 15V, VGS = 0V,
f = 1MHz
5205 6925 pF
Gate Resistance f = 1MHz 1.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 13 24 ns
Turn-Off Delay Time 55 88 ns
VDD = 15V, ID = 20A
VGS = 10V, R
GEN
= 6Ω
18 33 ns
Fall Time 12 22 ns
Total Gate Charge VGS = 0V to 10V
Total Gate Charge VGS = 0V to 5V 49 69 nC
VDD = 15V
ID = 20A
90 126 nC
Gate to Source Charge 16 nC
Gate to Drain “Miller” Charge 18 nC
mΩVGS = 4.5V, ID = 18A 3.8 4.9
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
θJA
pins. R
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 3mH, IAS = 21A, VDD = 30V, VGS = 10V.
FDS8812NZ Rev.C1
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 33 50 nC
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain
is guaranteed by design while R
θJC
is determined by the user ’s board design.
θJA
a) 50°C/W when mounted on
2
pad of 2 oz copper.
a 1in
= 0V, IS = 2.1A (Note 2) 0.7 1.2 V
GS
IF = 20A, di/dt = 100A/µs
2
36 54 ns
b) 125°C/W when mounted on
a minimum pad .
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FDS8812NZ N-Channel PowerTrench
Typical Characteristics T
80
VGS = 10.0V
60
40
, DRAIN CURRENT (A)
20
D
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 1.
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
VGS = 4.5V
VGS = 3.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
ID = 20A
V
= 10V
GS
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = 3.0V
2.5
VGS = 3.0V
2.0
VGS = 3.5V
1.5
NORMALIZED
1.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0.5
0 20406080
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
VGS = 4.0V
VGS = 4.5V
VGS = 10.0V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
8
7
(mΩ)
6
5
, DRAIN TO
4
DS(on)
r
3
SOURCE ON-RESISTANCE
2
246810
Figure 4.
ID =10A
VGS, GATE TO SOURCE VOLTAGE (V)
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
o
T
= 25
C
J
Source Voltage
®
MOSFET
80
60
40
20
, DRAIN CURRENT (A)
D
I
0
1.5 2.0 2.5 3.0 3.5 4.0
FDS8812NZ Rev.C1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VDD = 5V
TJ = 25oC
TJ = 150oC
TJ = -55oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
V
= 0V
GS
10
1
TJ = 150oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDS8812NZ N-Channel PowerTrench
Typical Characteristics T
10
ID = 20A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 20406080100
Figure 7.
50
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100 1000
Figure 9.
VDD = 10V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
U n c l a m p e d I n d u c t i v e
Switching Capability
= 25°C unless otherwise noted
J
VDD = 15V
V
=20V
DD
TJ = 25oC
10000
1000
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
iss
C
oss
C
rss
C a p a c i t a n c e v s D r a i n
to Source Voltage
-3
10
V
= 0V
GS
-4
10
-5
10
-6
10
-7
10
-8
10
, GATE LEAKAGE CURRENT(A)
g
I
-9
10
0 5 10 15 20 25 30
TJ = 150oC
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 10.
Gate Leakage Current vs Gate to
TJ = 25oC
Source Voltage
30
®
MOSFET
24
20
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
25 50 75 100 125 150
F i g u r e 1 1 . M a x i m u m C o n t i n u o u s D r a i n
FDS8812NZ Rev.C1
V
= 10V
GS
V
= 4.5V
GS
R
= 50oC/W
θJA
TA, AMBIENT TEMPERATURE (oC)
Current vs Ambient Temperature
200
100
100 µs
10
THIS AREA IS
1
, DRAIN CURRENT (A)
I
LIMITED BY r
SINGLE PULSE
T
D
0.1
J
R
θ
JA
T
0.01
A
0.01 0.1 1 10 100
Figure 12.
DS(on)
= MAX RATED
= 125 oC/W
= 25 oC
VDS, DRAIN to SOURCE VOLTAGE (V)
F or w ar d Bi a s S a fe
1 ms
10 ms
100 ms
1 s
10 s
DC
200
Operating Area
4
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Page 5
FDS8812NZ N-Channel PowerTrench
Typical Characteristics T
2000
1000
100
10
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
1
0.5
10
JA
θ
0.1
Z
0.01
IMPEDANCE,
NORMALIZED THERMAL
0.001
0.005
VGS = 10 V
-4
-3
10
2
1
DUTY CYCLE- DESCENDI NG ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
Figure 13. Single Pulse Maximum Power Dissipation
= 25°C unless otherwise noted
J
-2
10
-1
10
t, PULSE WIDTH (sec)
SINGLE PULSE
= 125 oC/W
R
θ
JA
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
SINGLE PULSE
= 125 oC/W
R
θ
JA
T
= 25 oC
A
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
110
P
NOTES:
DUTY FACTOR: D = t
EAK TJ = PDM x Z
110
θJA
o
C DERATE PEAK
150 TA–
-----------------------
125
TA = 25oC
100 1000
DM
t
1
t
2
1/t2
x R
+ T
θJA
A
100 1000
®
MOSFET
FDS8812NZ Rev.C1
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
5
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FDS8812NZ N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2008 Fairchild Semiconductor Corporation
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I37
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