Page 1
tm
FDS8672S
DS(on)
™
General Description
The FDS8672S is designed to replace a single MOSFET and
Schottky diode in synchronous DC/DC power supplies. This 30V
MOSFET is designed to maximize power conversion efficiency,
providing a low r
includes a patented combination of a MOSFET monolithically
integrated with a Schottky diode using Fairchild’s monolithic
SyncFET technology.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore low side switch
Point of load low side switch
N-Channel PowerTrench® SyncFET
30V, 18A, 4.8mΩ
Features
Max r Max r Includes SyncFET Schottky body diode High performance trench technology for extremely low r
and fast switching
High power and current handling capability
100% Rg (Gate Resistance) tested
Termination is Lead-free and RoHS Compliant
= 4.8mΩ at V
DS(on)
= 7.0mΩ at V
DS(on)
= 10V, ID = 18A
GS
= 4.5V, ID = 15A
GS
December 2007
and low gate charge. The FDS8672S
DS(on)
FDS8672S N-Channel PowerTrench
®
SyncFET
™
D
D
D
D
SO-8
Pin 1
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 18
-Pulsed 80
Single Pulse Avalanche Energy (Note 3) 216 mJ
Power Dissipation TA = 25°C (Note 1a) 2.5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
G
S
S
= 25°C unless otherwise noted
A
= 25°C (Note 1b) 1.0
A
5
D
6
D
7
D
8
D
G
4
S
3
S
2
1
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8672S FDS8672S SO8 13’’ 12mm 2500 units
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
1
www.fairchildsemi.com
Page 2
FDS8672S N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 10mA, referenced to 25°C 33 mV/°C
= 0V 500 µA
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 1mA 1.0 2.1 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5V, ID = 18A 78 S
ID = 10mA, referenced to 25°C -5 mV/°C
VGS = 10V, ID = 18A 3.8 4.8
VGS = 10V, ID = 18A, TJ = 125°C 5.3 7.8
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 985 1310 pF
Reverse Transfer Capacitance 135 205 pF
VDS = 15V, VGS = 0V,
f = 1MHz
2005 2670 pF
Gate Resistance f = 1MHz 0.6 2.0 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 4 10 ns
Turn-Off Delay Time 26 42 ns
VDD = 15V, ID = 18A,
VGS = 10V, R
GEN
= 6Ω
12 22 ns
Fall Time 3 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 5.5 nC
= 0V to 10V
GS
= 0V to 5V 15 21 nC
GS
VDD = 15V,
ID = 18A
29 41 nC
Gate to Drain “Miller” Charge 3.7 nC
mΩVGS = 4.5V, ID = 15A 5.3 7.0
®
SyncFET
™
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1 .5 in. boar d of FR- 4 mater ial. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting T
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 31 50 nC
= 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V.
J
V
GS
V
GS
IF = 18A, di/dt = 300A/µs
a) 50°C/W when mounted on a
2
pad of 2 oz copper.
1in
= 0V, IS = 18A 0.8 1.2
= 0V, IS = 1.8A 0.4 0.7
27 43 ns
is guaranteed by design while R
θJC
b) 125°C/W when mounted on a
minimum pad.
2
θCA
www.fairchildsemi.com
V
is determined by
Page 3
FDS8672S N-Channel PowerTrench
Typical Characteristics T
80
60
40
20
, DRAIN CURRENT (A)
D
I
0
0123
Figure 1.
1.6
ID = 18A
V
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
Figur e 3 . N ormal iz ed On- Re si stanc e
VGS = 10V
VGS = 4.5V
VGS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
= 10V
GS
T
, JUNCTION TEMPERATURE (
J
vs Junction Temperature
= 25°C unless otherwise noted
J
VGS = 3.5V
VGS = 3V
o
C)
4.0
PULSE DURATION = 80µs
3.5
3.0
VGS = 3V
2.5
2.0
NORMALIZED
1.5
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 20406080
DUTY CYCLE = 0.5%MAX
V
= 3.5V
GS
V
I
, DRAIN CURRENT(A)
D
GS
= 4.5V
VGS = 4V
V
= 10V
GS
Nor ma liz ed On- Resis tance
vs Drain Current and Gate Voltage
15
ID = 18A
12
(mΩ)
9
, DRAIN TO
DS(on)
6
r
SOURCE ON-RESISTANCE
3
246810
Figure 4.
T
V
, GATE TO SOURCE VOLTAG E (V)
GS
On-Resistance vs Gate to
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
o
= 25
C
J
Source Voltage
®
SyncFET
™
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
V
= 5V
DD
40
20
, DRAIN CURRENT (A)
D
I
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
Figure 5. Transfer Characteristics
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
TJ = 125oC
TJ = -55oC
100
V
= 0V
GS
10
TJ = 125oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDS8672S N-Channel PowerTrench
Typical Characteristics T
10
ID = 18A
8
V
= 10V
DD
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
0 5 10 15 20 25 30
Figure 7.
30
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
Figure 9.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ = 125oC
tAV, TIME IN AVALANCHE( ms)
Unc l am p ed I ndu c tiv e
Switching Capability
= 25°C unless otherwise noted
J
VDD = 15V
VDD = 20V
TJ = 25oC
500
5000
C
iss
C
1000
oss
C
CAPACITANCE (pF)
100
f = 1MHz
V
= 0V
GS
rss
60
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Cap aci tan ce vs D rai n
to Source Voltage
20
15
V
= 10V
GS
10
V
= 4.5V
, DRAIN CURRENT (A)
5
D
I
R
= 50oC/W
θJA
0
25 50 75 100 125 150
T
, AMBIENT TEMPERATURE (
A
Figure 10.
Ma ximum Continu ous Drai n
GS
Current vs Ambient Temperature
30
®
SyncFET
™
o
C)
100
10
THIS AREA IS
1
LIMITED BY r
, DRAIN CURRENT (A)
D
0.1
I
0.01
0.01 0.1 1 10 100
DS(on)
SINGLE PULSE
= MAX RATED
T
J
= 125
R
θJA
o
= 25
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
3000
1ms
10ms
100ms
1s
o
C/W
C
10s
DC
1000
), PEAK TRANSIENT POWER (W)
PK
P(
100
10
1
0.5
10
Figure 12.
VGS = 10V
-3
-2
10
-1
10
t, PULSE WIDTH (s)
10
0
SINGLE PULSE
= 125
R
θJA
o
T
= 25
C
A
1
10
10
o
C/W
2
3
10
Singl e Pulse Max imum
Power Dissipation
4
www.fairchildsemi.com
Page 5
FDS8672S N-Channel PowerTrench
Typical Characteristics T
2
NORMALIZED THERMAL
θJA
Z
IMPEDANCE,
0.001
0.0001
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-3
10
10
SINGLE PULSE
R
θJA
-2
= 25°C unless otherwise noted
J
= 125oC/W
-1
10
t, RECTANGULAR PULSE DURATION (s)
0
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1
10
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
2
10
3
10
®
SyncFET
™
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
5
www.fairchildsemi.com
Page 6
FDS8672S N-Channel PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
J
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDS8672S.
CURRENT: 0.8A/Div
TIME: 12.5nS/Div
Figure 14. FDS8672S SyncFET Body Diode
Reverse Recovery Characteristics
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
-2
10
-3
10
-4
10
-5
10
, REVERSE LEAKAGE CURRENT (A)
-6
10
DSS
I
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
Figure 15.
SyncFET Body Diode Reverse
TJ = 125oC
TJ = 100oC
TJ = 25oC
Leakage vs Drain to Source Voltage
®
SyncFET
™
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
6
www.fairchildsemi.com
Page 7
TRADEMARKS
tm
®
tm
tm
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
®
®
®
®
®
®
*
* EZSWITCH™ and FlashWriter
FPS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP-SPM™
Power220
SM
Power247
POWEREDGE
Power-SPM™
PowerTrench
Programmable Active Droop™
QFET
®
®
®
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
SyncFET™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
®
FDS8672S N-Channel PowerTrench
®
SyncFET
™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
7
www.fairchildsemi.com
Rev. I32
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