Page 1
FDS86540
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
60 V, 18 A, 4.5 mΩ
Features
Max r
Max r
High performance trench technologh for extremely low r
High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 4.5 mΩ at VGS = 10 V, ID = 18 A
DS(on)
= 5.4 mΩ at VGS = 8 V, ID = 16.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
May 2012
, fast switching speed and body
DS(on)
.
FDS86540 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86540 FDS86540 SO-8 13’’ 12
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 18
-Pulsed 120
Single Pulse Avalanche Energy (Note 3) 194 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
mm 2500 units
www.fairchildsemi.com
Page 2
FDS86540 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= 250 μA, VGS = 0 V60 V
D
I
= 250 μA, referenced to 25 °C 28 mV/°C
D
= 48 V, V
DS
= ±20 V, V
GS
= 0 V1μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 18 A 3.74.5
GS
= 8 V, ID = 16.5 A4.25.4
GS
= 10 V, I
V
GS
= 10 V, ID = 18 A69S
DS
= 250 μA23.14V
D
= 18 A, T
D
= 125 °C 5.9 7
J
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1610 2145 pF
Reverse Transfer Capacitance 67 130 pF
Gate Resistance 0.6 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 15 27 ns
Turn-Off Delay Time 33 53 ns
Fall Time 7.1 15 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 22 nC
Gate to Drain “Miller” Charge 13 nC
= 30 V, VGS = 0 V,
V
DS
f = 1 MHz
= 30 V, ID = 18 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 8 V5375nC
GS
GEN
= 6 Ω
V
DD
I
= 18 A
D
= 30 V,
4820 6410 pF
28 45 ns
65 90 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 mate rial . R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 44 71 nC
= 25 °C, L = 0.3 mH, IAS = 36 A, VDD = 54 V, VGS = 10 V.
J
V
V
I
a) 50 °C/W wh en mounted on a
2
1 in
pad of 2 oz copper.
= 0 V, I
GS
= 0 V, IS = 2 A (Note 2) 0.7 1.2
GS
= 18 A, di/dt = 100 A/μs
F
= 18 A (Note 2) 0.8 1.3
S
57 92 ns
is guaranteed by design while R
θJC
b) 125 °C/W when mounted on a
minimum pad.
2
V
is determined by
θCA
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Page 3
FDS86540 N-Channel PowerTrench
012345
0
30
60
90
120
VGS = 8 V
VGS = 6 V
VGS = 10 V
VGS = 5 V
VGS = 5.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 306090120
0
2
4
6
8
V
GS
= 8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
VGS = 5.5 V
VGS = 5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
ID = 18 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
45678910
0
5
10
15
20
TJ = 125 oC
ID = 18 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
234567
0
30
60
90
120
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor ma liz ed O n-Res ist anc e
vs Drain Current and Gate Voltage
®
MOSFET
Figur e 3 . Norm alize d O n- Res is tance
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDS86540 N-Channel PowerTrench
0 10203040506070
0
2
4
6
8
10
ID = 18 A
VDD = 20 V
V
DD
= 30 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 40 V
0.1 1 10 60
10
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100 300
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALAN CHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
5
10
15
20
V
GS
= 8 V
R
θJA
= 50 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
0.01 0.1 1 10 100 300
0.01
0.1
1
10
100
200
100 μs
10 s
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
110
100 1000
0.5
1
10
100
1000
2000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Cap aci tan ce v s Dr ain
to Source Voltage
®
MOSFET
Figure 9.
Unc l amp ed I n duc t ive
Switching Capability
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
Figure 11.
Forward Bias Safe
Operating Area
Figure 10.
Ma ximum Contin uo us Dr ain
Current vs Ambient Temperature
Fi gure 12. Singl e Pulse M aximum
Power Dissipation
4
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Page 5
FDS86540 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.0005
0.001
0.01
0.1
1
2
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACT OR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
5
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Page 6
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®
™
tm
tm
The following includes registered and unregistered trademar ks and service marks, owned by Fairchi ld Semiconductor and/ or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
®
FRFET
Global Power Resource
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Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®
®
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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XS™
®
®
®
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDS86540 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when prope rly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I61
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