Page 1
FDS8638
N-Channel PowerTrench® MOSFET
40 V, 18 A, 4.3 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
100% UIL Tested
RoHS Compliant
= 4.3 mΩ at V
DS(on)
= 5.4 mΩ at V
DS(on)
= 10 V, ID = 18 A
GS
= 4.5 V, ID = 16 A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
Synchronous Rectifier
Load Switch
March 2009
®
process that has
FDS8638 N-Channel PowerTrench
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 18
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 541 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
= 25 °C unless otherwise noted
A
G
S
S
= 25 °C (Note 1b) 1
A
5
D
6
D
7
D
8
D
G
4
S
3
S
2
1
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8638 FDS8638 SO-8 13 “ 12 mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
1
www.fairchildsemi.com
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FDS8638 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 32 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -7 mV/°C
D
V
= 10 V, ID = 18 A 3.3 4.3
GS
= 4.5 V, ID = 16 A 4.0 5.4
GS
= 10 V, ID = 18 A, TJ = 125 °C 4.8 6.3
V
GS
Forward Transconductance VDS = 5 V, ID = 18 A 88 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1175 1560 pF
Reverse Transfer Capacitance 120 180 pF
Gate Resistance 0.9 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 613ns
Turn-Off Delay Time 39 63 ns
Fall Time 510ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 12 nC
Gate to Drain “Miller” Charge 7.2 nC
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
VDD = 20 V, ID = 18 A,
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 4.5 V 27 39 nC
GS
GEN
= 6 Ω
VDD = 20 V,
I
= 18 A
D
4270 5680 pF
16 30 ns
61 86 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 ma terial. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting T
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 30 49 nC
= 25 °C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V.
J
a) 50 °C/W when moun ted on a
2
1 in
pad of 2 oz copper.
V
= 0 V, IS = 18 A (Note 2) 0.81 1.3
GS
= 0 V, IS = 2.1 A (Note 2) 0.71 1.2
V
GS
= 18 A, di/dt = 100 A/µs
I
F
2
θJC
51 82 ns
is guaranteed by design while R
b) 125 °C/W when mounted on a
minimum pad.
V
is determined by
θCA
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Page 3
FDS8638 N-Channel PowerTrench
Typical Characteristics T
100
80
60
40
, DRAIN CURRENT (A)
20
D
I
0
0.00.51.01.52.0
Figure 1.
1.6
ID = 18 A
V
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
On Region Characteristics Figure 2.
= 10 V
GS
T
, JUNCTION TEMPERATURE (
J
= 25 °C unless otherwise noted
J
VGS = 3.5 V
VGS = 3 V
o
C)
4.0
3.5
VGS = 3 V
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
3.0
2.5
VGS = 3.5 V
NORMALIZED
2.0
1.5
V
= 4 V
GS
1.0
V
DRAIN TO SOURCE ON-RESISTANCE
0.5
020406080100
VGS = 4.5 V
I
, DRAIN CURRENT (A)
D
GS
= 10 V
Normali z e d O n - R esistance
vs Drain Current and Gate Voltage
20
(mΩ)
15
10
DRAIN TO
,
DS(on)
r
5
SOURCE ON-RESISTANCE
0
246810
ID = 18 A
V
, GATE TO S OURCE V OLTAGE (V)
GS
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
®
MOSFET
Fig ure 3. Norma lized O n Res istan ce
vs Junction Temperature
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
V
= 5 V
DS
60
40
, DRAIN CURRENT (A)
20
D
I
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 150 oC
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
Figure 4.
On-Res istance vs Gate to
Source Voltage
100
V
= 0 V
GS
10
1
TJ = 25 oC
TJ = -55 oC
0.1
, REVERSE DRAIN CURRENT (A)
S
I
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150 oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
3
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Page 4
FDS8638 N-Channel PowerTrench
Typical Characteristics T
10
ID = 18 A
8
6
4
V
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 10203040506070
Figure 7.
30
10
VDD = 20 V
= 15 V
DD
Qg, GATE CHARGE (nC)
VDD = 25 V
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
TJ = 25 oC
10000
1000
CAPACITANCE (pF)
f = 1 MHz
= 0 V
V
GS
100
50
0.1 1 10 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
to Source Voltage
20
15
V
GS
= 10 V
C
iss
C
oss
C
rss
®
MOSFET
TJ = 125 oC
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE (ms)
Figure 9.
Unc l a m p e d I ndu c t i v e
TJ = 100 oC
Switching Capability
200
100
10
THIS A REA IS
1
LIMITED BY r
, DRAIN CURRENT (A)
D
0.1
I
0.01
0.01 0.1 1 10 100
DS(on)
SINGLE PULSE
= MAX RATED
T
J
= 125 oC/W
R
θ
JA
T
= 25 oC
C
VDS, DRAIN to SOURCE VOLTAGE (V)
1 ms
10 ms
100 ms
1 s
10 s
DC
200
10
V
= 4.5 V
= 50 oC/W
GS
o
(
DRAIN CURRENT (A)
,
5
D
I
R
θ
JA
0
25 50 75 100 125 150
T
,
AMBIENT TEMPERATURE
A
Figure 10.
Ma xim um C ont inu ous Dra in
Current vs Ambient Temperature
1000
VGS = 10 V
100
SINGLE PULSE
= 125
R
10
), PEAK TRANSIENT POWER (W)
1
PK
P(
0.5
-3
-2
10
10
-1
10
t, PULSE WIDTH (sec)
110
θJA
= 25
T
C
C
)
o
C/W
o
C
100 1000
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
Figure 12.
Si ngle P ulse M aximum
Power Dissipation
4
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Page 5
FDS8638 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
θJA
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
0.2
0.1
0.05
0.02
0.01
-3
10
-2
10
Figure 13.
= 25 °C unless otherwise noted
J
P
DM
SINGLE PULSE
R
= 125 oC/W
θJA
(Note 1b)
-1
10
t, RECTANGULAR PULSE DURATION (sec)
110
NTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
θJA
Junction-to-Ambient Transient Thermal Response Curve
t
1
t
2
1/t2
x R
+ T
θJA
A
100 1000
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
5
www.fairchildsemi.com
Page 6
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tm
®
tm
tm
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®
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®
®
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Programmable Active Droop™
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™
Saving our world, 1mW /W /kW at a time™
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
FDS8638 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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.
2. A critical component in any component of a life support, device, or
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Counterfeiting of semiconductor parts is a growing problem in the industr y. All manufactures of semiconductor products are experiencing coun terfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
Datasheet contains the design specifications for product develop ment. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I39
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