Datasheet FDS86242 Datasheet (Fairchild)

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FDS86242

SO-8

Pin 1

D D

N-Channel PowerTrench® MOSFET

150 V, 4.1 A, 67 mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  High power and current handling capability in a widely used

surface mount package

 100% UIL Tested  RoHS Compliant

= 67 mΩ at V

DS(on)

= 98 mΩ at V

DS(on)

= 10 V, ID = 4.1 A

= 6 V, ID = 3.3 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for r ruggedness

Applications

 DC/DC converters and Off-Line UPS  Distributed Power Architectures and VRMs  Primary Switch for 24V and 48V Systems  High Voltage Synchronous Rectifier

FDS86242 N-Channel PowerTrench

August 2010

process that has

, switching performance and

DS(on)

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS86242 FDS86242 SO-8 13 ’’ 12 mm 2500 units

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Current -Continuous 4.1

-Pulsed 20 Single Pulse Avalanche Energy (Note 3) 40 mJ Power Dissipation TC = 25 °C (Note 1) 5.0 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 25 Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25 °C unless otherwise noted

= 25 °C (Note 1a) 2.5

°C/W

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FDS86242 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V Breakdown Voltage Temperatur

Coefficient Zero Gate Voltage Drain Current VDS = 120 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 104 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA23.54V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -10 mV/°C

= 10 V, ID = 4.1 A 56.3 67

= 6 V, ID = 3.3 A 73.8 98

= 10 V, ID = 4.1 A, TJ = 125 °C 107 126

Forward Transconductance VDS = 10 V, ID = 4.1 A 11 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 64 85 pF Reverse Transfer Capacitance 2.9 5 pF Gate Resistance 0.5 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 1.5 10 ns Turn-Off Delay Time 13 23 ns Fall Time 2.8 10 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 3.0 nC Gate to Drain “Miller” Charge 2.0 nC

= 75 V, VGS = 0 V,

f = 1MHz

= 75 V, ID = 4.1 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 5 V 4.9 7 nC

GEN

= 6 Ω

= 4.1 A

= 75 V,

570 760 pF

7.9 16 ns

8.9 13 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1. 5 x 1.5 in. boar d of FR -4 mater ial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 71 114 nC

a) 50 °C/W when moun ted on a 1 in

= 25 °C, L = 1 mH, IAS = 9 A, VDD = 135 V, VGS = 10 V.

pad of 2 oz copper.

= 0 V, IS = 4.1 A (Note 2) 0.81 1.3

= 0 V, IS = 2 A (Note 2) 0.77 1.2

= 4.1 A, di/dt = 100 A/μs

θJC

61 98 ns

is guaranteed by design while R

b) 125 °C/W when mounted on a minimum pad.

is determined by

θCA

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FDS86242 N-Channel PowerTrench

012345

VGS = 7 V

VGS = 5.5 V

VGS = 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 6 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20

VGS = 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 6 V

VGS = 7 V

VGS = 5.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 4.1 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

, JUNCTION TEMPERATURE (

45678910

100

150

200

250

300

TJ = 125 oC

ID = 4.1 A

TJ = 25 oC

, GATE TO SOURCE VOLTA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

234567

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

MOSFET

Figu r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDS86242 N-Channel PowerTrench

0246810

ID = 4.1 A

VDD = 50 V

= 100 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 100

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 6 V

θJA

= 50 oC/W

= 10 V

, DRAIN CURRENT (A)

, Ambient TEMPERATURE (

0.01 0.1 1 10 100 800

0.001

0.01

0.1

100

10 s

100us

10 ms

1 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAG E (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

2000

SINGLE PULSE R

θJA

= 125

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

Figure 11.

Forward Bias Safe

Operating Area

Figure 10.

Max imum C onti n uous D rain

Cu rren t vs Amb i ent Temp era ture

Figure 12.

Si ngle Pulse Ma xim um

Power Dissipation

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FDS86242 N-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.0005

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

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TRADEMARKS

The following includes registered and unregistered tr ademarks and service marks, o wned by Fairchild Semiconductor and/ or its global su bsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDS86242 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life , and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages custome rs to purch ase Fairchild p arts either dire ctly from Fairchild or from Authorized Fa irchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

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committed to combat this global problem and e ncourage our cust omers to do the ir part in stopping this practice by buying direct or f rom authorized distrib utors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The dat asheet is for reference information only.

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FDS86242 Rev. C

Rev. I48