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FDS86240
N-Channel PowerTrench® MOSFET
150 V, 7.5 A, 19.8 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 19.8 mΩ at V
DS(on)
= 26 mΩ at V
DS(on)
= 10 V, ID = 7.5 A
GS
= 6 V, ID = 6.4 A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
FDS86240 N-Channel PowerTrench
June 2010
®
process that has
, switching performance and
DS(on)
.
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 7.5
-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 220 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
A
G
S
S
= 25 °C unless otherwise noted
= 25 °C (Note 1a) 2.5
A
5
D
6
D
7
D
8
D
G
4
S
3
S
2
1
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS86240 FDS86240 SO-8 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDS86240 Rev.C
1
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FDS86240 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 105 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.74V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 7.5 A 17.3 19.8
GS
= 6 V, ID = 6.4 A 19.7 26
GS
= 10 V, ID = 7.5 A, TJ = 125 °C 30.8 35.3
V
GS
Forward Transconductance VDS = 10 V, ID = 7.5 A 26 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 198 265 pF
Reverse Transfer Capacitance 8.3 15 pF
= 75 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.84 Ω
1930 2570 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 4.2 10 ns
Turn-Off Delay Time 24 39 ns
= 75 V, ID = 7.5 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
14 26 ns
Fall Time 4.9 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 7.6 nC
= 0 V to 10 V
GS
= 0 V to 5 V 16 22 nC
GS
V
DD
I
= 7.5 A
D
= 75 V,
28 40 nC
Gate to Drain “Miller” Charge 5.3 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
is determined with the device m ounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 i n. board o f FR-4 mat erial. R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
FDS86240 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 109 175 nC
= 25 °C, L = 1 mH, IAS = 21 A, VDD = 135 V, VGS = 10 V.
J
V
V
I
a) 50 °C/W when m ounted on a
2
pad of 2 oz copper.
1 in
= 0 V, IS = 7.5 A (Note 2) 0.77 1.3
GS
= 0 V, IS = 2 A (Note 2) 0.70 1.2
GS
= 7.5 A, di/dt = 100 A/μs
F
2
θJC
75 120 ns
is guaranteed by design while R
b) 125 °C/W when mounted on a
minimum pad.
V
is determined by
θCA
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FDS86240 N-Channel PowerTrench
0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
25
30
VGS = 5.5 V
VGS = 10 V
VGS = 4.5 V
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 5 10 15 20 25 30
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 5.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
VGS = 5 V
VGS = 6 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
ID = 7.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TE MPERATURE (
o
C)
246810
0
20
40
60
80
ID = 7.5 A
TJ = 25 oC
TJ = 125 oC
V
GS
, GATE TO S O URCE VOLTAGE (V )
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
23456
0
5
10
15
20
25
30
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
®
MOSFET
Norma l i z e d O n - Resistanc e
vs Drain Current and Gate Voltage
Fi g ure 3 . Norm a lize d On R e sist ance
vs Junction Temperature
FDS86240 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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FDS86240 N-Channel PowerTrench
0 5 10 15 20 25 30
0
2
4
6
8
10
ID = 7.5 A
VDD = 50 V
V
DD
= 75 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 100 V
0.1 1 10 100
1
10
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
2
4
6
8
V
GS
= 6 V
R
θJA
= 50 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
0.01 0.1 1 10 100 1000
0.005
0.01
0.1
1
10
50
1ms
10 ms
100 ms
DC
10 s
1 s
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS A REA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
®
MOSFET
Capacitance vs Drain
to Source Voltage
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
FDS86240 Rev.C
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Maxi mum Cont inuous D rain
Current vs Ambient Temperature
Figure 12.
Sing le Pul se Maximum
Power Dissipation
4
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Page 5
FDS86240 N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
FDS86240 Rev.C
5
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Page 6
tm
®
tm
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intended to be an exhaustive list of all such trademarks.
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FAST
FastvCore™
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FlashWriter
FPS™
®
®
®
®
®
®
*
®
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®
FRFET
Global Power Resource
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Gmax™
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ISOPLANAR™
MegaBuck™
MICROCOUPLER™
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®
®
®
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
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®
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™
Saving our world, 1mW/W/kW at a time™
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FDS86240 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or ( b) su pport or susta in life ,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
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Counterfeiting of semiconductor parts is a growing problem in the industr y. All manufactures of semicondu ctor products are experiencing count erfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDS86240 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I48
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