Datasheet fds86106 Datasheet

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Page 1

FDS86106

SO-8

Pin 1

D D

N-Channel Power Trench® MOSFET

100 V, 3.4 A, 105 mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  High power and current handling capability in a widely used

surface mount package

 100% UIL Tested  RoHS Compliant

= 105 mΩ at VGS = 10 V, ID = 3.4 A

DS(on)

= 171 mΩ at VGS = 6 V, ID = 2.7 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for ruggedness

Applications

 Synchronous Rectifier  Primary Switch For Bridge Topology

process that has

, switching performance and

DS(on)

FDS86106 N-Channel Power Trench

July 2011

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS86106 FDS86106 SO-8 13 ’’ 12 mm 2500 units

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous 3.4

-Pulsed 15 Single Pulse Avalanche Energy (Note 3) 13 mJ Power Dissipation TA = 25 °C (Note 1a) 5.0 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 2.5 Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 2.5

°C/W

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FDS86106 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

ΔBV

DSS

ΔT

DSS

GSS

On Characteristics

GS(th)

ΔV

GS(th)

ΔT

DS(on)

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 67 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2 2.9 4 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 10 V, ID = 3.4 A 6 S

= 250 μA, referenced to 25 °C -9 mV/°C

= 10 V, ID = 3.4 A 83 105

= 6 V, ID = 2.7 A 115 171

= 10 V, ID = 3.4 A, TJ = 125 °C 143 177

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 47 62 pF Reverse Transfer Capacitance 2 3 pF

= 50 V, VGS = 0 V,

f = 1 MHz

156 208 pF

Gate Resistance 0.9 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 2 10 ns Turn-Off Delay Time 8 15 ns

= 50 V, ID = 3.4 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 2 10 ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge V Total Gate Charge 0.8 nC

= 0 V to 5 V 1.6 2.3 nC

= 3.4 A

= 50 V

Gate to Drain “Miller” Charge 0.8 nC

5 10 ns

3 4 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting T

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 22 35 nC

= 25 oC; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.

a) 50 °C/W whe n mounted on a

1 in

pad of 2 oz copper.

= 0 V, IS = 3.4 A (Note 2) 0.86 1.3

= 0 V, IS = 2.1 A (Note 2) 0.83 1.2

= 3.4 A, di/dt = 100 A/μs

θJC

34 54

is guaranteed by design while R

b) 125 °C/W when mounted on a minimum pad.

is determined by

θCA

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FDS86106 N-Channel Power Trench

012345

VGS = 7 V

VGS = 5.5 V

VGS = 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 6 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

03691215

VGS = 5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 6 V

VGS = 7 V

VGS = 5.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 3.4 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

, JUNCTION TEMPERATURE (

45678910

100

200

300

400

500

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

246810

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE T O SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDS86106 N-Channel Power Trench

01234

ID = 3.4 A

VDD = 50 V

= 25 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 100

100

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

300

0.001 0.01 0.1 1 2

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALAN CHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 6 V

θJA

= 50 oC/W

= 10 V

, DRAIN CURRENT (A)

, Ambient TEMPERATURE (

0.01 0.1 1 10 100 600

0.01

0.1

10 s

100us

10 ms

1 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210-1110

100 1000

0.5

100

400

SINGLE PULSE R

θJA

= 125

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

Figure 11.

Forward Bias Safe

Operating Area

Figure 10.

Max imum C o ntin u ous Dra in

Cu rren t vs A mbie nt T empe ratu re

Figure 12.

Si ngl e Pu lse Max imu m

Power Dissipation

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FDS86106 N-Channel Power Trench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCEND ING O R D ER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

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TRADEMARKS

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

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UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDS86106 N-Channel Power Trench

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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As used here in:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specificatio ns for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child Semiconductor. The datashe et is for reference information only.

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Rev. I55