Page 1
FDS8449_F085
40V N-Channel PowerTrench® MOSFET
July 2009
FDS8449_F085 40V N-Channel PowerTrench
General Description
These N-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
• Inverter
• Power Supplies
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• 7.6 A, 40V R
R
• High power handling capability in a widely used
surface mount package
• RoHS compliant
• Qualified to AEC Q101
5
6
7
8
= 29mΩ @ VGS = 10V
DS(on)
= 36mΩ @ VGS = 4.5V
DS(on)
4
3
2
1
®
MOSFET
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 7.6 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
Operating and Storage Junction Temperature Range –55 to +150
(Note 1b)
±20
1
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1b) 125
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
©2009 Fairchild Semiconductor Corporation
FDS8449
FDS8449 FDS8449 13’’
_F085 Rev. A
_F085 12mm 2500 units
1
°C/W
www.fairchildsemi.com
Page 2
FDS8449_F085 40V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 3)
EAS Drain-Source Avalanche Energy
IAS Drain-Source Avalanche Current 7.3 A
= 40 V, ID = 7.3 A, L = 1 mH 27 mJ
V
DD
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
ΔBVDSS
ΔT
J
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage
GSS
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 μA
V
GS
I
= 250 μA, Referenced to 25°C
D
= ±20 V, VDS = 0 V
V
GS
40 V
34
mV/°C
μA
±100
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
ΔVGS(th)
ΔTJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 μA
V
DS
I
= 250 μA, Referenced to 25°C
D
VGS = 10 V, ID = 7.6 A
V
= 4.5 V, ID = 6.8 A
GS
= 10 V, ID = 7.6 A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 7.6 A 21 S
1 1.9 3 V
–5
21
26
29
29
36
43
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 760 pF
iss
C
Output Capacitance 100 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance f = 1.0 MHz 1.2
= 20 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
60 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 23 17 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 7.7 11 nC
Qgs Gate–Source Charge 2.4 nC
Qgd Gate–Drain Charge
V
= 20 V, ID = 1 A,
DD
V
= 10 V, R
GS
= 20 V, ID = 7.6 A,
V
DS
V
= 5 V
GS
GEN
= 6 Ω
3 6 ns
2.8 nC
Drain–Source Diode Characteristics
VSD
trr Diode Reverse Recovery Time 17 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. R
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
= 0 V, IS = 2.1 A (Note 2) 0.76 1.2 V
V
GS
I
= 7.6 A, diF/dt = 100 A/µs
F
7 nC
®
MOSFET
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
2 Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDS8449_F085 Rev. A 2 www.fairchildsemi.com
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
Page 3
Typical Characteristics
FDS8449_F085 40V N-Channel PowerTrench MOSFET
20
VGS = 10V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
00.511.522.5
4.0V
3.5V
4.5V6.0V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
3.0V
3
2.6
2.2
1.8
, NORMALIZED
1.4
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.6
0 4 8 12 16 20
3.5V
VGS = 3.0V
4.0V
, DRAIN CURRENT (A)
I
D
4.5V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 7.6A
VGS = 10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
0.07
0.06
0.05
0.04
0.03
, ON-RESISTANCE (OHM)
TA = 25oC
DS(ON)
0.02
R
0.01
246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
10V
ID = 3.5A
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 10V
15
10
TA = 125oC
, DRAIN CURRENT (A)
D
I
5
0
11.522.533.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
-55oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
BODY DIODE FORWARD VOLTAGE (V)
V
SD,
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8449
_F085 Rev. A 3 www.fairchildsemi.com
Page 4
Typical Characteristics
FDS8449_F085 40V N-Channel PowerTrench
10
ID = 7.6 A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0 4 8 12 16
Q
g
VDS = 10V
20V
, GATE CHARGE (nC)
30V
1000
800
C
600
400
CAPACITANCE (pF)
200
C
rss
0
0 5 10 15 20 25 30 35 40
C
oss
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
iss
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
VGS = 10V
, DRAIN CURRENT (A)
SINGLE PULSE
D
0.1
-I
R
= 125oC/W
θ
JA
T
= 25oC
A
0.01
0.1 1 10 100
-V
DC
, DRAIN-SOURCE VOLTAGE (V)
DS
10s
100ms
1s
10ms
1ms
100
μ
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
f = 1 MHz
= 0 V
V
GS
SINGLE PULSE
= 125°C/W
R
θ
JA
= 25°C
T
A
®
MOSFET
50
40
30
20
10
I(pk), PEAK TRANSIENT CURRE NT (A)
0
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
SINGLE PULSE
= 125°C/W
R
θ
JA
T
= 25°C
A
Figure 11. Single Pulse Maximum Peak
Current.
100
TJ = 25oC
10
, AVALANCHE CURRENT (A)
(AS)
I
1
0.01 0.1 1 10
t
, TIME IN AVANCHE(ms)
AV
Figure 12. Unclamped Inductive Switching
Capability.
FDS8449_F085 Rev. A 4 www.fairchildsemi.com
Page 5
Typical Characteristics
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01
SINGLE PULSE
Figure 13. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
t1, TIME (sec)
R
(t) = r(t) * R
θ
JA
R
= 125oC/W
θ
JA
P(pk)
t
1
t
2
TJ - TA = P * R
Duty Cycle, D = t1 / t
FDS8449_F085 40V N-Channel PowerTrench MOSFET
θ
JA
(t)
θ
JA
2
_F085 Rev. A 5 www.fairchildsemi.com
FDS8449
Page 6
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intended to be an exhaustive list of all such trademarks.
AccuPower™
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EcoSPARK
®
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™*
®
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®
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®
FAST
®
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Global Power ResourceSM
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MegaBuck™
MICROCOUPLER™
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MicroPak™
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OPTOLOGIC
OPTOPLANAR
®
®
®
FastvCore™
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FlashWriter
®
*
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QS™
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Saving our world, 1mW/W/kW at a time™
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STEALTH™
SuperFET™
SuperSOT™-3
®
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®
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®
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®
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Ultra FRFET™
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®
*
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* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I41
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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