Datasheet FDS8447 Datasheet (Fairchild)

tm

FDS8447 Single N-Channel PowerTrench® MOSFET

40V, 12.8A, 10.5mΩ

Features

 Max r

 Low gate charge

 High performance trench technology for extremely low

r

DS(on)

 High power and current handling capability

 RoHS compliant

= 10.5mΩ at V

DS(on)

= 12.3mΩ at V

DS(on)

= 10V, ID = 12.8A

GS

= 4.5V, ID = 11.4A

GS

General Description

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

 DC - DC conversion

FDS8447 Single N-Channel PowerTrench

November 2006

®

D

SO-8

Pin 1

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 12.8

-Pulsed 50

Drain-Source Avalanche Energy (Note 3) 150 mJ

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b) 1

Operating and Storage Junction Temperature Range -55 to 150 °C

G

S

= 25°C unless otherwise noted

A

D

5

D

6

D

7

D

8

G

4

S

3

S

2

S

1

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 50

Thermal Resistance, Junction to Case (Note 1) 25

Package Marking and Ordering Information

®

MOSFET

A

W

°C/W

Device Marking Device Reel Size Tape Width Quantity

FDS8447 FDS8447 13’’ 12mm 2500 units

www.fairchildsemi.com1

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

FDS8447 Single N-Channel PowerTrench

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.8 3 V

Gate to Source Threshold Voltage Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 12.8A 75.3 S

(Note 2)

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 250 350 pF

Reverse Transfer Capacitance 150 250 pF

Gate Resistance f = 1MHz 1.3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time 14 25 ns

Turn-Off D elay Time 27 42 ns

Fall Time 7 14 ns

Total Gate Charge at VGS = 10V

Total Gate Charge at VGS = 5V 19 27 nC

Gate to Source Gate Charge 6 nC

Gate to Drain “Miller”Charge 7 nC

ID = 250µA, referenced to 25°C 34 mV/°C

V

= 32V, V

DS

= 0V 1 µA

GS

TJ = 55°C 10 µA

= 0V ±100 nA

DS

ID = 250µA, referenced to 25°C -5 mV/°C

VGS = 10V, ID = 12.8A 9 10.5

mΩVGS = 4.5V, ID = 11.4A 10 12.3

VGS = 10V, ID = 12.8A,TJ = 125°C 13 15

VDS = 20V, VGS = 0V,

2000 2600 pF

f = 1MHz

VDD = 20V, ID = 12.8A VGS = 10V, R

GEN

= 4.5Ω

11 20 ns

35 49 nC

VDS = 20V, ID = 12.8A,

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes: 1: R

θJA

drain pins. R

2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

3: Starting T

FDS8447 Rev.B www.fairchildsemi.com2

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 9.5 19 nC

is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

= 25°C, L = 3mH, IAS = 10A, VDD = 40V, VGS = 10V.

J

is determined by the user’s board design.

θJA

a) 50°C/W when mounted on a 1in pad of 2 oz copper

Scale 1:1 on letter size paper

and Maximum Ratings

= 0V, IS = 12.8A (note 2) 0.84 1.2 V

GS

IF = 12.8A, diF/dt = 100A/µs

2

19 29 ns

b) 125°C/W when mounted on a minimum pad .

FDS8447 Single N-Channel PowerTrench

Typical Characteristics T

50

40

30

20

10

, DRAIN CURRENT (A)

D

I

0

0.0 0.4 0.8 1.2 1.6 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS =10V

VGS = 4.5V

VGS = 3.5V

= 25°C unless otherwise noted

J

PULSE DURATI ON = 80 µs DUTY CYCLE = 0.5%MAX

Figure 1. On Region Characteristics

1.8

ID = 12.8A V

= 10V

GS

1.6

1.4

1.2

1.0

NORMALIZED

0.8

VGS = 3V

3.0

PULSE DURATION = 80µs

2.5

VGS = 3V

DUTY CYCLE = 0.5%MAX

2.0

VGS = 3.5V

V

= 10V

GS

NORMALIZED

1.5

V

= 4.5V

GS

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 01020304050

ID, DRAIN CURRENT(A)

Figure 2. Normalized

On-Resistance vs Drain

Current and Gate Voltage

, DRAIN TO

DS(on)

r

25

ID = 12.8A

(mΩ)

20

15

10

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

®

MOSFET

0.6

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

Figure 3.

TJ, JUNCTION TEMPERATURE (oC)

Normalized On Resistance vs Junction

Temperature

50

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

40

V

= 5V

DS

30

20

10

, DRAIN CURRENT (A)

D

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 150oC

TJ = 25oC

TJ = -55oC

Figure 5. Transfer Characteristics

FDS8447 Rev.B www.fairchildsemi.com3

SOURCE ON-RESISTANCE

5

246810

Figure 4.

VGS, GATE TO SOURCE VOLTAGE (V)

On-Resistance vs Gate to Source

10

Voltage

100

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

Figure 6.

TJ = 150oC

TJ = 25oC

TJ = -55oC

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode Forward

Voltage vs Source Current

FDS8447 Single N-Channel PowerTrench

Typical Characteristics T

= 25°C unless otherwise noted

J

10

V

= 10V

8

DD

6

4

VDD = 30V

2

, GATE TO SOURCE VOLTAGE(V)

0

GS

V

0 10203040

Figure 7.

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

16

13

10

7

TJ = 125oC

TJ = 25oC

4

, AVALANCHE CURRENT(A)

AS

I

1

0.01 0.1 1 10 100

tAV, TIME IN AVALANCHE(ms)

VDD = 20V

4

10

C

3

10

C

oss

2

10

CAPACITANCE (pF)

f = 1MHz V

= 0V

GS

1

10

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

Capacitance vs Drain to Source Voltage

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

R

= 50oC/W

θJA

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

V

= 10V

GS

V

= 4.5V

GS

iss

rss

40

®

MOSFET

Figure 9.

Unclamped Inductive Switching

Capability

100

10

1

0.1

D

OPERATION IN THIS AREA MAY BE LIMITED BY r

SINGLE PULSE T

J

T

A

DS(on)

= MAX RATED

= 25OC

, DRAIN CURRENT (A) I

0.01

0.01 0.1 1 10 100

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11.

FDS8447 Rev.B www.fairchildsemi.com4

Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power

100us

1ms

10ms

100ms

1s

10s

DC

200

Figure 10.

Maximum Continuous Drain Current vs

Ambient Temperature

2000 1000

VGS = 10V

100

SINGLE PULSE R

θJA

T

A

10

), PEAK TRANSIENT POWER (W)

PK

1

P(

10-410-310-210-110010110210

SINGLE PULSE

t, PULSE WIDTH (s)

Dissipation

= 125°C/W

= 25°C

3

FDS8447 Single N-Channel PowerTrench

Typical Characteristics T

2

NORMALIZED THERMAL

0.1

θJA

0.01

IMPEDANCE, Z

1E-3

0.0002

1

10

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

-3

10

Figure 13. Transient Thermal Response Curve

= 25°C unless otherwise noted

J

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

P

(PK)

t

1

t

R

(t) = r(t)*R

θ

JA

R

θ

JA

DUTY FACTOR: D = t1/t

0

10

θ

JA

= 125oC/W TJ-TA =P*R

1

10

2

θ

2

10

JA

2

3

10

®

MOSFET

FDS8447 Rev.B www.fairchildsemi.com5

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As used herein:

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification P ro du c t S ta tu s Definition

Advance Information Formative or In Design This datasheet contains the design specifications for

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Semiconductor reserves the right to make changes at any time without notice to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I22