Datasheet FDS7766 Datasheet (Fairchild Semiconductor)

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FDS7766

30V N-Channel PowerTrench



MOSFET

FDS7766

March 2003

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low R

in a small package.

DS(ON)

Applications

• Synchronous rectifier

• DC/DC converter

Features

• 17 A, 30 V R R

• High performance trench technology for extremely low R

• High power and current handling capability

• Fast switching

DS(ON)

= 5 mΩ @ VGS = 10 V

DS(ON)

= 6 mΩ @ VGS = 4.5 V

DS(ON)

SO-8

Absolute Maximum Ratings

TA=25oC unless otherwise noted

5 6 7 8

4 3 2 1

Symbol Parameter Ratings Units

Drain-Source Voltage 30 V

DSS

Gate-Source Voltage

GSS

ID Drain Current – Continuous – Pulsed 60 PD

TJ, T

STG

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range –55 to +150

(Note 1a)

17 A

(Note 1a)

2.5

(Note 1b) (Note 1c)

±16

1.2

1.0

°C

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1c)

(Note 1)

125

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2003 Fairchild Semiconductor Corporation

FDS7766 FDS7766 13’’ 12mm 2500 units

°C/W °C/W °C/W

FDS7766 Rev E (W)

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FDS7766

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

Drain–Source Breakdown Voltage

DSS

∆BV ∆T

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

DSS

GSSF

GSSR

On Characteristics

GS(th)

∆V

GS(th)

∆TJ R

DS(on)

Breakdown Voltage Temperature

DSS

Coefficient

Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

On–State Drain Current VGS = 10 V, VDS = 5 V 30 A

D(on)

= 0 V, ID = 250 µA

= 250 µA, Referenced to 25°C

= VGS, ID = 250 µA

= 250 µA, Referenced to 25°C

VGS = 10 V, ID = 17 A V

= 4.5 V, ID = 15.5 A

= 10 V, ID = 17 A, TJ = 125°C

gFS Forward Transconductance VDS = 10 V, ID = 17 A 116 S

30 V

mV/°C

µA

1 1.5 3 V

–4.3

4.2

4.7

5.7

5.0

6.0

7.2

mV/°C

mΩ

Dynamic Characteristics

Input Capacitance 4973 pF

iss

Output Capacitance 826 pF

oss

Reverse Transfer Capacitance

rss

RG Gate Resistance

= 15 V, V

= 0 V,

f = 1.0 MHz

= 15 mV, f = 1.0 MHz

341 pF

1.2

Ω

Switching Characteristics

Turn–On Delay Time 12 22 ns

d(on)

tr Turn–On Rise Time 8 16 ns t

Turn–Off Delay Time 85 136 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 43 69 nC Qgs Gate–Source Charge 13 nC Qgd Gate–Drain Charge

(Note 2)

= 15 V, ID = 1 A,

= 10 V, R

GEN

= 6 Ω

25 40 ns

= 15 V, ID = 17 A,

= 5.0 V

11 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Drain–Source Diode Forward Voltage

is guaranteed by design while R

θJC

a) 50°C/W when

mounted on a 1in2 pad of 2 oz copper

θCA

= 0 V, IS = 2.5 A

is determined by the user's board design.

b) 105°C/W when

mounted on a .04 in pad of 2 oz copper

(Note 2)

0.7 1.2 V

c) 125°C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS7766 Rev E (W)

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)

Typical Characteristics

VGS = 10V

4.5V

, DRAIN CURRENT (A

0 0.25 0.5 0.75 1 1.25

3.5V

3.0V

, DRAIN TO SOURCE VO LTAGE (V)

2.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

2.2

1.8

VGS = 3.0V

1.6

1.4

, NORMALIZED

DS(ON)

1.2

DRAIN-SOURCE ON-RESI S TANCE

0.8 0 102030405060

3.5V

4.0V

, DIRAIN CURRENT ( A)

4.5V

Drain Current and Gate Voltage.

6.0V

FDS7766

10V

1.8

ID = 17A

1.6 V

= 10V

1.4

1.2

, NORMALIZED

DS(ON)

0.8

DRAIN-SOURCE ON-RESI S TANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation

withTemperature.

VDS = 5.0V

, DRAIN CURRENT (A

1.522.53

TA = 125oC

25oC

, GATE TO SOURCE VOLTAGE (V)

-55oC

0.014

0.012

0.01

0.008

0.006

, ON-RESISTANCE (O HM)

DS(ON)

0.004

0.002

TA = 25oC

246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

ID = 8.5A

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

0.0001

00.20.40.60.811.2

TA = 125oC

25oC

BODY DIODE FORWARD VOLTAGE (V)

SD,

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS7766 Rev E (W)

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)

Typical Characteristics

ID = 17A

, GATE-SOURCE VOLTAGE (V)

0 102030405060708090

, GATE CHARGE (nC)

VDS = 5V

10V

15V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

6400

5600

4800

4000

3200

2400

CAPACITANCE (pF)

1600

800

0 6 12 18 24 30

ISS

OSS

RSS

, DRAIN TO SOURCE VOLT AGE (V)

f = 1 MHz V

= 0 V

FDS7766

100

100ms

10ms

1ms

LIMIT

DS(ON)

VGS = 10V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

0.01

= 125oC/W

= 25oC

0.1 1 10 100

10s

, DRAIN-SOURCE VOLTAGE (V)

100µs

P(pk), PEAK TRANSIE NT P O WE R ( W)

0.001 0.01 0.1 1 10 100

, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.1

0.05

0.02

0.01

SINGLE PULSE

0.0001 0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

θJA

P(pk

- TA = P * R

Duty Cycle, D = t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

SINGLE PULSE

= 125°C/W

= 25°C

(t) = r(t) * R

= 125oC/W

θJA

(t)

θJA

/ t

FDS7766 Rev E (W)

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START

SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I2