Datasheet FDS6986AS Datasheet (Fairchild)

March 2005

FDS6986AS

Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™

General Description

The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

D

2

D

/

S

2

1

D

/

S

1

D

1

D

1

D

G

SO-8

Pin 1

SO-8

S

1

S

2

S

G

2

G

S

1

S

/

D

2

Features

• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode

7.9A, 30V R R

• Q1: Optimized for low switching losses Low gate charge (10 nC typical)

6.5A, 30V R R

5 6 7 8

= 20 mΩ @ VGS = 10V

DS(on)

= 28 mΩ @ VGS = 4.5V

DS(on)

= 29 mΩ @ VGS = 10V

DS(on)

= 38 mΩ @ VGS = 4.5V

DS(on)

Q2

Q1

4 3 2 1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter Q2 Q1 Units

V

Drain-Source Voltage 30 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current - Continuous (Note 1a) 7.9 6.5 A

- Pulsed 30 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6

TJ, T

STG

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b) (Note 1c)

±20 ±16

1

0.9

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 40

°C/W °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6986AS FDS6986AS 13” 12mm 2500 units FDS6986AS FDS6986AS_NL (Note 4) 13” 12mm 2500 units

FDS6986AS Rev A(X)

A

FDS6986

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

∆BVDSS ∆T

I

DSS

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain

Current

I

Gate-Body Leakage

GSS

VGS = 0 V, ID = 1 mA

= 0 V, ID = 250 uA

V

GS

I

= 1 mA, Referenced to 25°C

D

= 250 µA, Referenced to 25°C

I

D

Q1 Q2 Q1

VDS = 24 V, VGS = 0 V Q2

Q1

= ±20 V, VDS = 0 V

V

GS

= ±16 V, VDS = 0 V

V

GS

Q2 Q1

30 30

V

31 23

500

1

±100

Q2

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 1 mA

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source

On-Resistance

I

On-State Drain Current VGS = 10 V, VDS = 5 V Q2

D(on)

= VGS, ID = 250 µA

V

DS

= 1 mA, Referenced to 25°C

I

D

= 250 uA, Referenced to 25°C

I

D

VGS = 10 V, ID = 7.9 A

= 10 V, ID = 7.9 A, TJ = 125°C

V

GS

= 4.5 V, ID = 7 A

V

GS

= 10 V, ID = 6.5 A

V

GS

= 10 V, ID = 6.5 A, TJ = 125°C

V

GS

= 4.5 V, ID = 5.6 A

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 7.9 A

= 5 V, ID = 6.5 A

V

DS

Q2 Q1 1 1

Q2 Q1

Q2 17

Q1 21

Q1 Q2

Q1

1.7

1.9 3 3

–3.2 –4.0

25 22

32 32

30

A

20

25

15

20 32 28

29 49 38

S

Dynamic Characteristics

C

Input Capacitance Q2

iss

C

Output Capacitance Q2

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = 15mV, f = 1.0 MHz Q2

= 10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Q1 Q1

Q2 Q1

Q1

550

720

180

120

70

60

3.2

1.2

pF pF pF

Switching Characteristics (Note 2)

t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time t

Turn-Off Delay Time

d(off)

tf Turn-Off Fall Time t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time t

Turn-Off Delay Time

d(off)

tf Turn-Off Fall Time

= 15 V, ID = 1 A,

V

DD

= 10V, R

V

GS

= 15 V, ID = 1 A,

V

DD

= 4.5V, R

V

GS

GEN

= 6 Ω

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1

9

10

18 19

6 4 12 8 ns 25

24

40 39

4 3 8 6 ns 11

10

20 20

15 9 26

18

15

13

26 23

6 3 12 6 ns

S

mV/°C

µA

nA

V

mV/°C

mΩ

Ω

ns

ns ns ns

FDS6986AS Rev A (X)

Electrical Characteristics (continued) T

Symbol

Parameter

Test Conditions

= 25°C unless otherwise noted

A

Type Min Typ Max Units

Switching Characteristics (Note 2)

Q

Total Gate Charge, Vgs = 10V

g(TOT)

Qg Total Gate Charge, Vgs = 5V Qgs Gate-Source Charge Qgd Gate-Drain Charge

Q2:

= 15 V, ID = 7.9 A

V

DS

Q1:

= 15 V, ID = 6.5 A

V

DS

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1

10

12

5.6

6.5 8 9

2.0

2.3

1.5

2.1

14 17

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q2

Q1

Trr Reverse Recovery Time Qrr Reverse Recovery Charge Trr Reverse Recovery Time Qrr Reverse Recovery Charge VSD Drain-Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

I

= 10 A,

F

= 300 A/µs (Note 3)

d

iF/dt

I

= 6.5 A,

F

= 100 A/µs (Note 3)

d

iF/dt

VGS = 0 V, IS = 2.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2)

is determined by the user's board design.

θCA

Q2

Q1

Q2 Q1

3.0

1.3

15

6 nC 20 12 nC

0.6

0.8

0.7

1.2

nC

nC nC nC

A

ns

V

a) 78°C/W when

mounted on a

0.5in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

4. FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label.

b) 125°C/W when

mounted on a

0.02 in2 pad of 2 oz copper

c) 135°C/W when

mounted on a minimum pad.

FDS6986AS Rev A (X)

A

Typical Characteristics: Q2

FDS6986

30

VGS = 10V

25

6.0V

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1 1.5 2 2.5 3

3.5V

4.5V

3.0V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

2.5V

2

VGS = 3.0V

1.75

1.5

3.5V

, NORMALIZED

1.25

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.75 0 5 10 15 20 25 30

4.0V

4.5V

, DRAIN CURRENT (A)

I

D

5.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 7.9A

V

= 10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation with

Temperature.

0.065

0.055

0.045

0.035

, ON-RESISTANCE (OHM)

0.025

DS(ON)

R

TA = 25oC

0.015 246810

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

S

6.0V 10V

ID = 3.95A

30

VDS = 5V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

1.522.533.5

TA = 125oC

-55oC

25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

100

VGS = 0V

10

1

TA = 125oC

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

with Source Current and Temperature.

FDS6986AS Rev A (X)

A

Typical Characteristics: Q2

FDS6986

10

ID = 7.9A VDS = 10V

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

036912

Q

, GATE CHARGE (nC)

g

20V

15V

800

600

C

iss

400

C

CAPACITANCE (pF)

200

C

rss

0

0 4 8 121620

oss

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10s

1ms

10ms

100ms

1s

10

R

LIMIT

DS(ON)

1

, DRAIN CURRENT (A)

D

I

VGS = 10V

0.1

SINGLE PULSE R

= 135oC/W

JA

θ

= 25oC

T

A

0.01

0.01 0.1 1 10 100

, DRAIN-SOURCE VOLTA GE (V )

V

DS

DC

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1MHz

V

GS

SINGLE PULSE R

= 135°C/W

JA

θ

T

= 25°C

A

S

= 0 V

FDS6986AS Rev A (X)

A

Typical Characteristics Q1

FDS6986

20

VGS = 10V

6.0V

15

10

, DRAIN CURRENT (A)

D

5

I

0

00.511.522.53

5.0V

V

DS

4.0V

4.5V

3.5V

3.0V

2.5V

, DRAIN-SOURCE VOLTAGE (V)

3.4

3

2.6

2.2

1.8

, NORMALIZED

DS(ON)

1.4

R

1

DRAIN-SOURCE ON-RESISTANCE

0.6

VGS = 3.0V

3.5V

4.0V

4.5V

5.0V

6.0V

0 5 10 15 20

ID, DRAIN CURRENT (A)

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 6.5A

V

= 10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

Figure 13. On-Resistance Variation with

Temperature.

0.135

0.115

0.095

0.075

0.055

, ON-RESISTANCE (OHM)

TA = 25oC

DS(ON)

0.035

R

0.015

246810

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

S

10V

ID = 3.3 A

20

VDS = 5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

1.522.533.544.5

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = -55oC

125oC

25oC

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

-55oC

FDS6986AS Rev A (X)

A

Typical Characteristics Q1

FDS6986

10

ID = 6.5A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

V

0

03691215

VDS = 10V

20V

15V

Qg, GATE CHARGE (nC)

1000

800

C

600

400

CAPACITANCE (pF)

200

C

rss

0

048121620

C

oss

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

iss

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

100

10s

1ms

10ms

100ms

1s

10

R

LIMIT

DS(ON)

1

DC

, DRAIN CURRENT (A)

D

I

VGS = 10V

0.1

SINGLE PULSE

= 135oC/W

R

JA

θ

T

= 25oC

A

0.01

0.01 0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

t

, TIME (sec)

1

SINGLE PULSE R

JA

θ

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum

Power Dissipation.

f = 1MHz

V

GS

= 135°C/W

T

= 25°C

A

S

= 0 V

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

, TIME (sec)

t

1

R

(t) = r(t) * R

JA

θ

R

= 135 °C/W

JA

θ

P(pk)

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

2

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

Figure 21. Transient Thermal Response Curve.

FDS6986AS Rev A (X)

A

Typical Characteristics (continued)

FDS6986

SyncFET Schottky Body Diode Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986AS.

0.8A/DIV

12.5nS/DIV

Figure 22. FDS6986AS SyncFET body diode

reverse recovery characteristic.

For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A).

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

0.1

0.01

0.001

0.0001

0.00001

, REVERSE LEAKAGE CURRENT (A)

DSS

I

0.000001 0 5 10 15 20 25 30

VDS, REVERSE VOLTAGE (V)

125oC

100oC

25oC

Figure 24. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

S

0.8A/DIV

12.5nS/DIV

Figure 23. Non-SyncFET (FDS6690A) body

diode reverse recovery characteristic.

FDS6986AS Rev A (X)

L

A

µ

Typical Characteristics

V

DS

V

GS

R

GE

0V

V

GS

tp

vary tP to obtain required peak I

S

Figure 25. Unclamped Inductive Load Test

Circuit

Drain Current

Same type as

I

DUT

AS

t

P

+

V

DD

I

AS

-

Figure 26. Unclamped Inductive

Waveforms

BV

t

AV

DSS

FDS6986AS

V

DS

V

DD

+

10V

-

50kΩ

F

10

V

GS

F

1

+

V

DD

-

Q

G(TOT)

10V

DUT

Q

GS

GD

Charge, (nC)

I

g(REF

V

GS

Q

Figure 27. Gate Charge Test Circuit Figure 28. Gate Charge Waveform

t

V

R

GEN

V

GS

Pulse Width ≤ 1 Duty Cycle ≤ 0.1%

V

GS

DS

ON

t

R

L

DUT

V

DS

+

V

DD

0V

d(ON)

90%

t

10%

-

V

GS

s

0V

10%

50%

Pulse Width

t

d(OFF

90%

t

50%

OFF

t

10%

90%

Figure 29. Switching Time Test

Figure 30. Switching Time Waveforms

Circuit

FDS6986AS Rev A (X)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™

FPS™

CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY



FAST FASTr™

LittleFET™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™



IntelliMAX™ ISOPLANAR™

MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC



OPTOPLANAR™ P ACMAN™

POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench



QFET



QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART ST ART™

SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET



UniFET™ VCX™



FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I15