Datasheet fds6984as Datasheet

FDS6984AS

Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™

General Description

Features

J

May 2008

FDS6984AS

The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.

• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode

8.5A, 30V R R

• Q1: Optimized for low switching losses Low gate charge (8nC typical)

5.5A, 30V R R

• RoHS Compliant

max= 20 mΩ @ VGS = 10V

DS(on)

max= 28 mΩ @ VGS = 4.5V

DS(on)

max= 31 mΩ @ VGS = 10V

DS(on)

max= 40 mΩ @ VGS = 4.5V

DS(on)

D1

D2

G1

S2

S1

G2

SO-8

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

5

Q1

6 7

Q2

8

4 3 2 1

Symbol Parameter Q2 Q1 Units

V

Drain-Source Voltage 30 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current - Continuous (Note 1a) 8.5 5.5 A

- Pulsed 30 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6

TJ, T

STG

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b) (Note 1c)

±20 ±20

1

0.9

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 40

°C/W °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6984AS FDS6984AS 13” 12mm 2500 units

FDS6984AS Rev A1(X)

FDS6984AS

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

I

Zero Gate Voltage Drain

DSS

Current

I

Gate-Body Leakage

GSS

VGS = 0 V, ID = 1 mA

= 0 V, ID = 250 µA

V

GS

Q2 Q1

VDS = 24 V, VGS = 0 V Q2

Q1

= 24 V, VGS = 0 V, TJ = 125°C

V

DS

Q2 2.3 mA Q1 79 nA

V

= ±20 V, VDS = 0 V

GS

All

30

V

30

500

1

±100

µA

nA

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 1 mA

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source

On-Resistance

I

On-State Drain Current VGS = 10 V, VDS = 5 V Q2

D(on)

V

= VGS, ID = 250 µA

DS

I

= 1 mA, Referenced to 25°C

D

= 250 uA, Referenced to 25°C

I

D

VGS = 10 V, ID = 8.5 A V

= 10 V, ID = 8.5 A, TJ = 125°C

GS

V

= 4.5 V, ID = 7 A

GS

= 10 V, ID = 5.5 A

V

GS

= 10 V, ID = 5.5 A, TJ = 125°C

V

GS

V

= 4.5 V, ID = 4.6 A

GS

gFS Forward Transconductance VDS = 5 V, ID = 8.5 A

= 5 V, ID = 5.5 A

V

DS

Q2 Q1 1 1 Q2 Q1

Q2

1.7

1.8 3 3

–3

–4

17

24 21

Q1 26

34 32

Q1 Q2 Q1

30 20

A

25

18

V

mV/°C

20 32

mΩ

28 31

43 40

S

Dynamic Characteristics

C

Input Capacitance Q2

iss

C

Output Capacitance Q2

oss

C

Reverse Transfer Capacitance

rss

= 15 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Q1 Q1

Q2 Q1

RG Gate Resistance VGS = 15mV, f = 1.0 MHz Q2

Q1

530

420

170

120

60

50

3.1

2.2

pF pF pF

Ω

FDS6984AS Rev A1 (X)

FDS6984AS

Electrical Characteristics (continued) T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2)

t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time t

Turn-Off Dela y Time

d(off)

tf Turn-Off Fall Time t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time t

Turn-Off Dela y Time

d(off)

tf Turn-Off Fall Time

Q

Total Gate Charge, Vgs = 10V

g(TOT)

Qg Total Gate Charge, Vgs = 5V Qgs Gate-Source Charge Qgd Gate-Drain Charge

V

= 15 V, ID = 1 A,

DD

= 10V, R

V

GS

= 15 V, ID = 1 A,

V

DD

V

= 4.5V, R

GS

Q2: V

= 15 V, ID = 8.5 A

DS

Q1: V

= 15 V, ID = 5.5 A

DS

GEN

= 6 Ω

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1

8 9 16

18

5 6 10

12

23

22

37 35

4 2 8

4

9 7 13

10 11 13

18 19 14 20 24 24

4 3 8

6

10 8 14

11

5 4 8

6

1.5

1.3

1.9

1.5

ns ns ns ns ns ns ns ns nC

nC nC nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q2

Q1

trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge

VSD Drain-Source Diode Forward

Voltage

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

1. R

θJA

the drain pins. R

is guaranteed by design while R

θJC

= 10A,

I

F

dI

/dt = 300 A/µs (Note 3)

F

= 5.5A,

I

F

dI

/dt = 100 A/µs (Note 3)

F

VGS = 0 V, IS = 2.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2)

is determined by the user's board design.

θCA

Q2

Q1

Q2 Q1

3.0

1.3

13

17

0.6

0.8

ns

6 nC

ns

6 nC

0.7

1.2 V

A

a) 78°C/W when

mounted on a

0.5in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. See “SyncFET Schottky body diode characteristics” below.

3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 125°C/W when

mounted on a

0.02 in2 pad of 2 oz copper

c) 135°C/W when

mounted on a minimum pad.

FDS6984AS Rev A 1(X)

Typical Characteristics: Q2

FDS6984AS

30

VGS = 10V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

6.0V

00.511.522.53

V

DS

3.5V

4.0V

4.5V

3.0V

2.5V

, DRAIN-SOURCE VOLTAGE (V)

2

VGS = 3.0V

1.8

1.6

3.5V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8 0 5 10 15 20 25 30

4.0V

4.5V

, DRAIN CURRENT (A)

I

D

5.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 8.5A

V

= 10V

GS

1.45

1.3

1.15

, NORMALIZED

1

DS(ON)

R

0.85

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

Figure 3. On-Resistance Variation with

Temperature.

0.06

0.05

0.04

0.03

, ON-RESISTANCE (OHM)

0.02

DS(ON)

R

0.01

TA = 25oC

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = 125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

6.0V 10V

ID = 4.25A

30

VDS = 5V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

1 1.5 2 2.5 3 3.5 4

TA = 125oC

25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

100

VGS = 0V

10

1

TA = 125oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001 0 0.2 0.4 0.6 0.8 1

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

with Source Current and Temperature.

FDS6984AS Rev A1 (X)

Typical Characteristics: Q2

FDS6984AS

10

ID =8.5A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

024681012

VDS = 10V

Q

, GATE CHARGE (nC)

g

20V

15V

800

600

400

C

CAPACITANCE (pF)

200

C

rss

0

0 5 10 15 20 25 30

oss

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A)

D

I

VGS = 10V

0.1

SINGLE PULSE

= 135oC/W

R

JA

θ

T

= 25oC

A

0.01

0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1s

10s

DC

10ms

1ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1MHz V

GS

C

iss

SINGLE PULSE R

= 135°C/W

JA

θ

= 25°C

T

A

= 0 V

FDS6984AS Rev A1 (X)

Typical Characteristics Q1

FDS6984AS

20

VGS = 10V

6.0V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

00.511.522.53

4.0V

4.5V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

3.5V

3.0V

2.5V

2.4

2.2

2

1.8

1.6

, NORMALIZED

1.4

DS(ON)

R

1.2

DRAIN-SOURCE ON-RESISTANCE

1

0.8 0 5 10 15 20

VGS = 3.0V

3.5V

4.0V

4.5V

5.0V

ID, DRAIN CURRENT (A)

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 5.5A

= 10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

Figure 13. On-Resistance Variation with

Temperature.

0.1

0.08

0.06

, ON-RESISTANCE (OHM)

0.04

DS(ON)

R

TA = 25oC

0.02 246810

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

6.0V

ID = 2.75A

10V

20

VDS = 5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

0.5 1.5 2.5 3.5 4.5

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

-55oC

25oC

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6984AS Rev A1 (X)

Typical Characteristics Q1

FDS6984AS

10

ID = 5.5A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

V

0

0246810

VDS = 10V

15V

Q

, GATE CHARGE (nC)

g

20V

600

500

400

300

C

200

CAPACITANCE (pF)

100

C

rss

0

0 5 10 15 20

oss

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

C

iss

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

1s

1

, DRAIN CURRENT (A)

D

I

VGS = 10V

SINGLE PULSE

0.1

= 135oC/W

R

JA

θ

= 25oC

T

A

0.01

0.1 1 10 100

, DRAIN-SOURCE VOLTA GE (V )

V

DS

10s

DC

10ms

1ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

SINGLE PULSE R

θ

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum

Power Dissipation.

f = 1MHz V

= 135°C/W

JA

= 25°C

T

A

GS

= 0 V

1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.001

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

JA

θ

R

= 135°C/W

JA

θ

P(pk)

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS6984AS Rev A1 (X)

Typical Characteristics (continued)

SyncFET Schottky Body Diode Characteristics

FDS6984AS

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6984AS.

3A/DIV

10nS/DIV

Figure 22. FDS6984AS SyncFET body

diode reverse recovery characteristic.

For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6984A).

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

0.01

125oC

0.001

100oC

0.0001

0.00001

, REVERSE LEAKAGE CURRENT (A)

DSS

I

0.000001 0 10 20 30

VDS, REVERSE VOLTAGE (V)

25oC

Figure 24. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

3A/DIV

10nS/DIV

Figure 23. Non-SyncFET (FDS6984A) body

diode reverse recovery characteristic.

0V

FDS6984AS Rev A1 (X)

TRADEMARKS

®

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.

®

ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

®

EfficentMax™ EZSWITCH™ *

™

®

Fairchild Fairchild Semiconductor FACT Quiet Series™

®

FACT

®

FAST FastvCore™ FlashWriter

®

*

®

* EZSWITCH™ and FlashWriter

FPS™ F-PFS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

PDP-SPM™ Power-SPM™ PowerTrench

SM

Programmable Active Droop™ QFET

®

QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™

®

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic

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TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™

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UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

in the labeling, can be reasonably expected to result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

Obsolete Not In Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I34

FDS6984AS Rev.A1(X)