Datasheet FDS6975 Datasheet (Fairchild)

February 1999

FDS6975

Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

-6 A, -30 V. R R

= 0.032 Ω @ VGS = -10 V,

DS(ON)

= 0.045 Ω @ VGS = -4.5 V.

DS(ON)

Low gate charge (14.5nC typical). High performance trench technology for extremely low

R

.

DS(ON)

High power and current handling capability.

SOT-23

SuperSOTTM-8

SO-8 SOT-223SuperSOTTM-6

SOIC-16

D2

D1

FDS

6975

G2

S2

G1

1

SO-8

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -30 V Gate-Source Voltage ±20 V Drain Current - Continuous (Note 1a) -6 A

S1

= 25oC unless otherwise noted

A

5

6

7

8

- Pulsed -20

P

D

Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1 (Note 1c) 0.9

TJ,T

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Operating and Storage Temperature Range -55 to 150 °C

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

4

3 2

1

FDS6975 Rev.C

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS

BV

∆BV

I

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = -250 µA -30 V Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -21 mV/oC

/∆T

J

Zero Gate Voltage Drain Current VDS = -24 V, V

= 0 V -1 µA

GS

TJ = 55°C -10 µA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA Gate - Body Leakage, Reverse VGS = -20 V, V

= 0 V -100 nA

DS

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.7 -3 V Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 4 mV/oC

/∆T

J

Static Drain-Source On-Resistance VGS = -10 V, I D = -6 A 0.025 0.032

Ω

TJ =125°C 0.033 0.051

VGS = -4.5 V, I D = -5 A 0.034 0.045

I

D(ON)

g

FS

On-State Drain Current VGS = -10 V, VDS = -5 V -20 A Forward Transconductance VDS = -10 V, I D = -6 A 16 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -15 V, VGS = 0 V, Output Capacitance 400 pF

f = 1.0 MHz

1540 pF

Reverse Transfer Capacitance 170 pF

SWITCHING CHARACTERISTICS (Note 2)

t t

t t Q Q Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time V Turn - On Rise Time

= -15 V, I D = -1 A 13 24 ns

DS

V

GEN

= -10 V, R

GEN

= 6 Ω

22 35 ns

Turn - Off Delay Time 47 75 ns Turn - Off Fall Time 18 30 ns Total Gate Charge VDS = -10 V, I D = -6 A, 14.5 20 nC Gate-Source Charge V

= -5 V 4 nC

GS

Gate-Drain Charge 5 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

guaranteed by design while R

Maximum Continuous Drain-Source Diode Forward Current -1.3 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

(Note 2) -0.73 -1.2 V

JC

θ

is

a. 78OC/W on a 0.5 in

pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

2

b. 125OC/W on a 0.02 in

pad of 2oz copper.

2

c. 135OC/W on a 0.003 in

pad of 2oz copper.

2

FDS6975 Rev.C

Typical Electrical Characteristics

30

V =-10V

GS

-6.0V

24

18

12

-4.5V

-3.5V

-3.0V

6

D

- I , DRAIN-SOURCE CURRENT (A) 0

0 1 2 3 4 5

- V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6

I = -6A

D

V = -10V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

2.5

V = -3.5V

2

GS

-4.0 V

1.5

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5 0 6 12 18 24 30

-4.5 V

-5.5 V

- I , DRAIN CURRENT (A)

D

-7.0 V

Figure 2. On-Resistance Variation with

Dain Current and Gate Voltage.

0.1

0.08

0.06

0.04

0.02

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

- V , GATE TO SOURCE VOLTAGE (V)

GS

I =-3A

T = 125°C

-10V

D

A

25°C

Figure 3. On-Resistance Variation with

Temperature.

30

V =-5.0V

DS

24

18

12

D

6

- I , DRAIN CURRENT (A)

0

1.5 2 2.5 3 3.5 4 4.5

- V , GATE TO SOURCE VOLTAGE (V)

GS

T =-55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

30

V = 0V

GS

10

T = 125°C

1

0.1

0.01

S

- I , REVERSE DRAIN CURRENT (A)

0.001 0 0.3 0.6 0.9 1.2 1.5

J

25°C

-55°C

- V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature.

FDS6975 Rev.C

Typical Electrical Characteristics (continued)

10

I =-6A

D

V = -5V

DS

8

6

-15V

4

2

GS

- V , GATE-SOURCE VOLTAGE (V) 0

0 6 12 18 24 30

30

10

RDS(ON) LIMIT

3

Q , GATE CHARGE (nC)

g

100us

1ms

10ms

100ms

1s

0.5

V = -10V

GS

SINGLE PULSE

D

0.05

- I , DRAIN CURRENT (A)

0.01

JA

R =135°C/W

θ

A

T = 25°C

0.1 0.3 1 2 5 10 30 50

- V , DRAIN-SOURCE VOLTAGE (V)

DS

10s

DC

-10V

3000 2000

C

iss

1000

C

oss

rss

500

CAPACITANCE (pF)

200

f = 1 MHz V = 0 V

GS

100

0.1 0.2 0.5 1 2 5 10 20 30

- V , DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.

30

25

20

15

POWER (W)

10

5

0

0.01 0.1 0.5 10 50 100 300 SINGLE PULSE TIME (SEC)

SINGLE PULSE

JA

R =135°C/W

θ

A

T = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

1

0.5

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

D = 0.5

0.2

0.1

0.05

0.02

0.01 Single Pulse

t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R = 135°C/W

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

Duty Cycle, D = t /t

θ

A

JA

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

JA

θ

2

FDS6975 Rev.C

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™

2

E

CMOS

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™

Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.