Datasheet FDS6911 Datasheet (Fairchild)

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December 2011

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FDS6911

Dual N-Channel Logic Level PowerTrench® MOSFET

20V, 7.5A, 13mΩ

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

SO-8

Pin 1

SO-8

Features

 r

 Fast switching speed  Low gate charge

 High performance trench technology for extremely

 High power and current handling capability

= 13 mΩ @ VGS = 10 V

DS(on)

= 17 mΩ @ V

DS(on)

DS(ON)

low R

= 4.5 V

l Nh

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Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

Drain-Source Voltage 20 V

DSS

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 7.5 A – Pulsed 20

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

(Note 1c)

± 20

1.0

0.9

°C

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 40

°C/W °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6911 FDS6911 13’’ 12mm 2500 units

www.fairchildsemi.com

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FDS6911 Dual N-Channel Lo

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

Drain–Source Breakdown Voltage

DSS

ΔBVDSS ΔT

Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V

DSS

Gate–Source Leakage

GSS

Breakdown Voltage Temperature Coefficient

= 0 V, ID = 250 μA

= 250 μA, Referenced to 25°C

= 20 V, VGS = 0 V, TJ = 55°C

= ±20 V, VDS = 0 V

20 V

±100

mV/°C

μA nA

On Characteristics (Note 2)

Gate Threshold Voltage

GS(th)

ΔVGS(th) ΔTJ

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

On–State Drain Current VGS = 10 V, VDS = 5 V 20 A

D(on)

= VGS, ID = 250 μA

= 250 μA, Referenced to 25°C

VGS = 10 V, ID = 7.5 A

= 4.5 V, ID = 6.5 A

= 10 V, ID = 7.5 A,TJ = 125°C

gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 36 S

1 1.8 3 V

–4.7

10.6 13

14.5

13 17 20

mV/°C

mΩ

ic level PowerTrench

Dynamic Characteristics

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

RG Gate Resistance

= 15 V, V

= 0 V,

f = 1.0 MHz

= 15 mV, f = 1.0 MHz

1130 pF

300 pF 100 pF

2.4

Switching Characteristics (Note 2)

Turn–On Delay Time

d(on)

tr Turn–On Rise Time t

Turn–Off Delay Time

d(off)

= 15 V, ID = 1 A,

= 10 V, R

GEN

= 6 Ω

tf Turn–Off Fall Time Q

Total Gate Charge at Vgs=10V 17 24 nC

g(TOT)

Qg Total Gate Charge at Vgs=5V 9 13 nC Qgs Gate–Source Charge 3.1 nC

= 15 V, ID = 7.5 A,

Qgd Gate–Drain Charge

9 18 ns 5 10 ns

26 42 ns

7 14 ns

2.7 nC

MOSFET

FDS6911 Rev C1 www.fairchildsemi.com

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Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Time 24 nS

Qrr Diode Reverse Recovery Charge

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

1. R

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = 1.3 A (Note 2) 1.2 V I

= 7.5 A, diF/dt = 100 A/µs

13 nC

FDS6911 Dual N-Channel Lo

a) 78°C/W when

mounted on a

0.5 in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%

b) 125°C/W when

mounted on a .02 in2 pad of 2 oz copper

c) 135°C/W when mounted on a

minimum pad.

ic level PowerTrench

MOSFET

FDS6911 Rev C1 www.fairchildsemi.com

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Typical Characteristics

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VGS = 10.0V

4.5V

, DRAIN CURRENT (A)

0 0.25 0.5 0.75 1 1.25 1.5

3.5V

4.0V

3.0V

, DRAIN-SOURCE VOLTAGE (V)

2.6

VGS = 3.0V

2.2

1.8

, NORMALIZED

(on)

3.5V

1.4

DRAIN-SOURCE ON-RESISTANCE

0.6 048121620

4.0

4.5V

, DRAIN CURRENT (A)

5.0

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 ID = 7.5A

= 10V

1.4

1.2

, NORMALIZED

(on)

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

0.01

(on)

TA = 25oC

246810

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

6.0V

10.0V

ID = 3.8A

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Figure 3. On-Resistance Variation with

Temperature.

VDS = 5V

, DRAIN CURRENT (A)

1.522.533.54

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

25oC

-55

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6911 Rev C1 www.fairchildsemi.com

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Typical Characteristics

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ID = 7.5A

, GATE-SOURCE VOLTAGE (V)

0 4 8 12 16 20

VDS = 10V

20V

, GATE CHARGE (nC)

15V

1400

1200

1000

800

600

CAPACITANCE (pF)

400

200

0 5 10 15 20 25 30

oss

rss

, DRAIN TO SOURCE VOLT AGE (V)

iss

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

, DRAIN CURRENT (A)

VGS = 10V

0.1

SINGLE PULSE

= 135oC/W

= 25oC

0.01

0.1 1 10 100

10s

, DRAIN-SOURCE VOLTAGE (V)

10ms

100ms

LIMIT

DS(ON)

100μs

1ms

P(pk), PEAK TRANSIENT POWER (W)

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

SINGLE PULSE R

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1MHz

= 135°C/W

= 25°C

= 0 V

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D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

TIME (sec

(t) = r(t) * R

= 135°C/W

P(pk

- TA = P * R

Duty Cycle, D = t

(t)

/ t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS6911 Rev C1 www.fairchildsemi.com

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TRADEMARKS

The following includes registered and unregistered trademar ks and service marks, owned by Fair child Semicondu ctor and/or its glo bal subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

® ®

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FRFET Global Power Resource GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

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LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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parts. Customers who inadvertently purchase counterfeit parts experience many problems su ch as l oss of bra nd reput ation , su bstan dard per fo rmance, f ailed application, and increased cost of production and manufacturing delays. Fairchild is taking st rong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild stro ngly encourages custo mers to purchase Fairchild parts eithe r directly fro m Fairchild or from A uthorized Fairchil d Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceabi lity, meet Fairchild’s quality standards for handing and st orage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping th is practice by buying direct or from authorized distribut ors.

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Rev. I60