Datasheet FDS6910 Datasheet (Fairchild)

September 2004

FDS6910

Dual N-Channel Logic Level PowerTrench



MOSFET

FDS6910

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been espec ially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• 7.5 A, 30 V. R R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely

low R

• High power and current handling capability

DS(ON)

= 13 mΩ @ VGS = 10 V

DS(ON)

= 17 mΩ @ VGS = 4.5 V

DS(ON)

D1

D

D1

D

D2

D

D2

D

SO-8

G2

Pin 1

SO-8

S2

S

Absolute Maximum Ratings

G1

G

S1

S

TA=25oC unless otherwise noted

5

Q1

6 7

Q2

8

4 3 2 1

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous – Pulsed 20

PD

TJ, T

STG

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range –55 to +150

(Note 1a)

7.5 A

(Note 1a)

1.6

(Note 1b) (Note 1c)

± 20

1.0

0.9

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

78 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6910 FDS6910 13’’ 12mm 2500 units

2004 Fairchild Semiconductor Corporation

°C/W °C/W

FDS6910 Rev BW)

FDS6910

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BV

DSS

∆T

J

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

DSS

I

Gate–Source Leakage

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆TJ R

DS(on)

Breakdown Voltage Temperature Coefficient

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 10 V, VDS = 5 V 20 A

D(on)

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

= 24 V, VGS = 0 V, TJ = 55°C

V

DS

= ±20 V, VDS = 0 V

V

GS

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 7.5 A V

= 4.5 V, ID = 6.5 A

GS

= 10 V, ID = 7.5 A,TJ = 125°C

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 36 S

30 V

28

1

10

±100

mV/°C

µA nA

1 1.8 3 V

–4.7

10.6 13

14.5

13 17 20

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Revers e T rans fer Capacitance

rss

RG Gate Resistance

Switching Characteristics

t

Turn–On Delay Time

d(on)

(Note 2)

tr Turn–On Rise Time t

Turn–Off Delay Time

d(off)

V

= 15 V, V

DS

= 0 V,

GS

f = 1.0 MHz

V

= 15 mV, f = 1.0 MHz

GS

V

= 15 V, ID = 1 A,

DD

V

= 10 V, R

GS

GEN

= 6 Ω

tf Turn–Off Fall Time Q

Total Gate Charge at Vgs=10V 17 24 nC

g(TOT)

Qg Total Gate Charge at Vgs=5V 9 13 nC Qgs Gate–Source Charge 3.1 nC

V

= 15 V, ID = 7.5 A,

DD

Qgd Gate–Drain Charge

1130 pF

300 pF 100 pF

2.4

9 18 ns 5 10 ns

26 42 ns

7 14 ns

Ω

2.7 nC

FDS6910 Rev B(W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Tim e 24 nS

Qrr Diode Reverse Recovery Charge

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = 1.3 A

= 7.5 A, diF/dt = 100 A/µs

I

F

(Note 2)

1.2 V

13 nC

FDS6910

a) 78°C/W when

mounted on a 0.5in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 125°C/W when

mounted on a 0.02 in2 pad of 2 oz copper

c) 135°C/W when mounted on a

minimum mounting pad.

FDS6910 Rev B(W)

Typical Characteristics

FDS6910

20

VGS = 10.0V

16

4.5V

12

8

, DRAIN CURRENT (A)

D

I

4

0

0 0.25 0.5 0.75 1 1.25 1.5

3.5V

4.0V

3.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

2.6

VGS = 3.0V

2.2

1.8

, NORMALIZED

R

DS(ON)

3.5V

1.4

1

DRAIN-SOURCE ON-RESISTANCE

0.6 048121620

4.0

4.5V

, DRAIN CURRENT (A)

I

D

5.0

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 7.5A

= 10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

TA = 25oC

0

246810

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

6.0V

10.0V

ID = 3.8A

20

VDS = 5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

1.522.533.54

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

25oC

-55

o

C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

V

, BODY DIODE FORWARD VOLTAGE (V )

SD

-55oC

with Source Current and Temperature.

FDS6910 Rev B(W)

,

)

Typical Characteristics

FDS6910

10

ID = 7.5A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

V

0

0 4 8121620

VDS = 10V

20V

Q

, GATE CHARGE (nC)

g

15V

1400

1200

C

1000

800

600

CAPACITANCE (pF)

400

200

0

0 5 10 15 20 25 30

C

oss

C

rss

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

iss

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

10

1

, DRAIN CURRENT (A)

D

VGS = 10V

0.1

I

SINGLE PULSE R

= 135oC/W

θ

JA

= 25oC

T

0.01

A

0.1 1 10 100

V

10s

DC

, DRAIN-SOURCE VOLTAGE (V)

DS

1s

10ms

100ms

LIMIT

DS(ON)

100µs

1ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

SINGLE PULSE R

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1MHz

V

= 0 V

GS

= 135°C/W

θJA

T

= 25°C

A

1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

JA

θ

R

= 135°C/W

JA

θ

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

TIME (sec

t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS6910 Rev B(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™

FPS™

CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY



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

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

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I13