Datasheet FDS6694 Datasheet (Fairchild Semiconductor)

FDS6694

30V N-Channel Fast Switching PowerTrench MOSFET

December 2001

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R

and fast switching speed.

DS(ON)

Applications

• DC/DC converter

• Power management

• Load switch

D

SO-8

Pin 1

SO-8

S

Absolute Maximum Ratings T

G

S

o

=25

C unless otherwise noted

A

Features

• 12 A, 30 V. R R

• Low gate charge (13 nC typical)

• High performance trench technology for extremely

low R

• High power and current handling capability.

DS(ON)

5 6 7 8

= 11 mΩ @ VGS = 10 V

DS(ON)

= 13.5 mΩ @ VGS = 4.5 V

DS(ON)

4 3 2 1

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage ±16 V

GSS

ID Drain Current – Continuous (Note 1a) 12 A – Pulsed 50 PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) (Note 1c)

Operating and Storage Junction Temperature Range –55 to +175 °C

1.4

1.2

W

Thermal Characteristics

R

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W

θJA

R

Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W

θJA

R

Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

θJC

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2001 Fairchild Semiconductor Corporation FDS6694 Rev D(W)

FDS6694 FDS6694 13’’ 12mm 2500 units

FDS6694

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V

DSS

∆BVDSS ∆TJ

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C 22 mV/°C

Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2 3 V

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

I

D(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 12 A

VGS = 4.5 V, ID = 10.5 A VGS= 10 V, ID = 12 A, TJ=125°C

–5 mV/°C

9.1

11

11.1

12.2

13.5

m Ω

15

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A

gFS Forward Transconductance VDS = 5 V, ID = 12 A 50 S

Dynamic Characteristics

C

Input Capacitance 1293 pF

iss

C

Output Capacitance 342 pF

oss

C

Reverse Transfer Capacitance

rss

VDS = 15 V, V f = 1.0 MHz

= 0 V,

GS

136 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 9 18 ns

d(on)

tr Turn–On Rise Time 6 12 ns t

Turn–Off Delay Time 28 45 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 13 19 nC Qgs Gate–Source Charge 4 nC Qgd Gate–Drain Charge

VDD = 15 V, ID = –1 A, VGS = 10 V, R

GEN

= 6 Ω

VDS = 15 V, ID = 12 A, VGS = 5 V

10 20 ns

4.7 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Drain–Source Diode Forward Voltage

is guaranteed by design while R

θJC

a) 50°C/W when

mounted on a 1in2 pad of 2 oz copper

is determined by the user's board design.

θCA

VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V

b) 105°C/W when

mounted on a .04 in2 pad of 2 oz copper

c) 125°C/W when mounted

on a minimum pad.

FDS6694 Rev D(W)

FDS6694

Typical Characteristics

50

VGS = 10V

6.0V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

0 0.5 1 1.5 2

4.5V

4.0V

VDS, DRAIN-SOURCE VOLTAGE (V)

3.5.V

3.0V

2.2

2

VGS = 3.5V

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

0 10 20 30 40 50

4.0V

4.5V

5.0V

ID, DRAIN CURRENT (A)

6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

1.6 ID = 12A

VGS = 10V

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

, ON-RESISTANCE (OHM)

R

Drain Current and Gate Voltage.

0.028

0.024

0.02

0.016

0.012

DS(ON)

0.008

0.004 2 4 6 8 10

TA = 25oC

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

10V

ID = 6A

Figure 3. On-Resistance Variation with

Temperature.

70

VDS = 5V

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

1.5 2 2.5 3 3.5 4 4.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

125

25oC

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6694 Rev D(W)

TRANSIENT THERMAL RESISTANCE

P(pk)

0.1

0.2

D = 0.5

FDS6694

Typical Characteristics

10

ID = 12A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20 25

Qg, GATE CHARGE (nC)

VDS = 5V

10V

15V

2000

1600

1200

800

CAPACITANCE (pF)

400

0

0 5 10 15 20 25 30

C

OSS

C

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A) I

VGS = 10V

0.1

SINGLE PULSE

D

R

= 125oC/W

θ

JA

TA = 25oC

0.01

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

DC

100ms

1s

10ms

1ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100

t1, TIME (sec)

f = 1MHz VGS = 0 V

SINGLE PULSE

R

= 125°C/W

θJA

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

RθJA(t) = r(t) + RθJA

R

= 125 °C/W

0.1

0.05

0.02

0.01

r(t), NORMALIZED EFFECTIVE

0.01

SINGLE PULSE

θJA

t1

t

2

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t

2

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS6694 Rev D(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™

STAR*POWER is used under license

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™



OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4