Page 1
FDS6690AS
30V N-Channel PowerTrench® SyncFET™
May 2008
FDS6690AS 30V N-Channel PowerTrench
tm
General Description
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDS6690AS
DS(ON)
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Low side notebooks
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings T
S
S
o
=25
C unless otherwise noted
A
Features
• 10 A, 30 V. R
R
• Includes SyncFET Schottky diode
• Low gate charge (16nC typical)
• High performance trench technology for extremely low
R
DS(ON)
• High power and current handling capability
max= 12 mΩ @ VGS = 10 V
DS(ON)
max= 15 mΩ @ VGS = 4.5 V
DS(ON)
5
6
7
8
4
3
2
1
®
SyncFET™
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 10 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
(Note 1c)
±20
1.2
1
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6690AS FDS6690AS 13’’ 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDS6690AS Rev A
°C/W
°C/W
2(X)
Page 2
FDS6690AS 30V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500
DSS
I
Gate–Body Leakage
GSS
Breakdown Voltage Temperature
Coefficient
J
I
= 10 mA, Referenced to 25°C 30
D
= ±20 V, VDS = 0 V
V
GS
±100
mV/°C
µA
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.6 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
= 10 mA, Referenced to 25°C
D
VGS = 10 V, ID = 10 A
V
= 4.5 V, ID = 8.5 A
GS
=10 V, ID =10A, TJ=125°C
V
GS
–4
10
12
15
12
15
19
mV/°C
mΩ
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 15 V, ID = 10 A 45 S
Dynamic Characteristics
C
Input Capacitance 910 pF
iss
C
Output Capacitance 270 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.0
V
= 15 V, V
DS
f = 1.0 MHz
= 0 V,
GS
100 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 8 16 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 25 40 ns
d(off)
tf Turn–Off Fall Time
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 15 27 ns
d(off)
tf Turn–Off Fall Time
Q
g
(TOT)
Total Gate Charge at Vgs=10V 16 23 nC
Qg Total Gate Charge at Vgs=5V 9 13 nC
Qgs Gate–Source Charge 2.3 nC
Qgd Gate–Drain Charge
V
= 15 V, ID = 1 A,
DS
= 10 V, R
V
GS
V
= 15 V, ID = 1 A,
DS
= 4.5 V, R
V
GS
V
= 15 V, ID = 10 A
DD
GEN
GEN
= 6 Ω
6 12 ns
= 6 Ω
8 16 ns
3.0 nC
®
SyncFET™
FDS6690AS Rev A2 (X)
Page 3
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain–Source Diode Forward Current 3.5 A
S
VSD Drain–Source Diode Forward
Voltage
Trr Diode Reverse Recovery Time IF = 10A, 16 nS
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 9 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
VGS = 0 V, IS = 3.5 A (Note 2)
0.6 0.7 V
FDS6690AS 30V N-Channel PowerTrench
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
®
SyncFET™
FDS6690AS Rev A2 (X)
Page 4
Typical Characteristics
FDS6690AS 30V N-Channel PowerTrench
50
VGS = 10V
40
6.0V
30
20
, DRAIN CURRENT (A)
D
I
10
0
0 0.5 1 1.5 2
4.0V
4.5V
3.0V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
2.5V
2.2
VGS = 4.0V
1.8
3.5V
1.4
, NORMALIZED
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.6
0 1020304050
4.0V
4.5V
, DRAIN CURRENT (A)
I
D
5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 10A
V
= 10V
GS
1.45
1.3
1.15
, NORMALIZED
1
DS(ON)
R
0.85
DRAIN-SOURCE ON-RESISTANCE
0.7
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
Figure 3. On-Resistance Variation with
Temperature.
0.06
0.05
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
DS(ON)
0.01
R
TA = 25oC
0
246810
TA = 125oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
6.0V
10V
ID = 5A
®
SyncFET™
50
VDS = 5V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
11.522.533.54
TA = 125oC
25oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
10
VGS = 0V
1
TA = 125oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0 0.2 0.4 0.6 0.8
V
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
SD
with Source Current and Temperature.
FDS6690AS Rev A2 (X)
Page 5
Typical Characteristics
FDS6690AS 30V N-Channel PowerTrench
10
ID =10A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
036912151821
VDS = 10V
15V
, GATE CHARGE (nC)
Q
g
20V
1400
1200
1000
800
600
CAPACITANCE (pF)
400
200
C
rss
0
0 5 10 15 20 25 30
C
oss
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
C
Figure 7. Gate Charge Characteristics. F igure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
D
I
0.01
VGS = 10V
SINGLE PULSE
0.1
= 125oC/W
R
JA
θ
T
= 25oC
A
0.1 1 10 100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
100ms
1s
10s
DC
10ms
1ms
100µs
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
SINGLE PULSE
R
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
iss
= 125°C/W
JA
θ
= 25°C
T
A
f = 1MHz
= 0 V
V
GS
®
SyncFET™
1
D = 0.5
R
(t) = r(t) * R
JA
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.05
0.02
0.01
SINGLE PULSE
t
, TIME (sec)
1
θ
R
= 125 °C/W
JA
θ
P(pk)
t
- TA = P * R
T
J
Duty Cycle, D = t
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
JA
θ
1
t
2
(t)
JA
θ
/ t
1
2
FDS6690AS Rev A2(X)
Page 6
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
FDS6690AS 30V N-Channel PowerTrench
Fairchild’s SyncFET process embeds a Schottky
diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery
characteristic of the FDS6690AS.
3A/DIV
10nS/DIV
Figure 12. FDS6690AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).
3A/DIV
10nS/DIV
Figure 13. Non-SyncFET (FDS6690A)
body diode reverse recovery
characteristic.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
0.1
0.01
0.001
0.0001
0.00001
, REVERSE LEAKAGE CURRENT (A)
DSS
I
0.000001
0 5 10 15 20 25 30
TA = 125oC
TA = 100oC
TA = 25oC
, REVERSE VOLTAGE (V)
V
DS
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0V
FDS6690AS Rev A2(X)
®
SyncFET™
Page 7
Typical Characteristics
FDS6690AS 30V N-Channel PowerTrench
I
AS
L
DUT
0.01Ω
+
-
V
DS
V
GS
R
GE
0V
V
GS
vary tP to obtain
required peak I
tp
AS
Figure 15. Unclamped Inductive Load Test
Circuit
Drain Current
Same type as
10µ
50kΩ
F
1µF
+
+
-
10V
-
V
GS
DUT
I
g(REF
t
P
I
V
DD
AS
Figure 16. Unclamped Inductive
Waveforms
V
DD
Q
G(TOT)
10V
GS
Q
GD
V
GS
Q
BV
DSS
t
AV
V
DS
V
DD
®
SyncFET™
Charge, (nC)
Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform
t
R
L
DUT
V
R
GEN
V
GS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
V
GS
DS
Figure 19. Switching Time Test
ON
t
d(ON)
V
DS
+
V
DD
0V
90%
10%
t
r
-
V
GS
0V
10%
50%
Pulse Width
Figure 20. Switching Time Waveforms
t
d(OFF
)
90%
t
50%
OFF
t
f
10%
90%
Circuit
FDS6690AS Rev A2(X)
Page 8
TRADEMARKS
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™ *
™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FlashWriter
®
*
®
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
PDP-SPM™
Power-SPM™
PowerTrench
SM
Programmable Active Droop™
QFET
®
®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
®
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDS6690AS Rev.A2(X)
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