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FDS6
690A
February 2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
G
G
S
S
S
S
S
Features
• 11 A, 30 V. R
R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
• High power and current handling capability
MOSFET
DS(ON)
5
6
7
8
= 12.5 mΩ @ VGS = 10 V
DS(ON)
= 17.0 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
tm
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 50
PD
EAS Single Pulse Avalanche Energy
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a)
11 A
(Note 1a)
2.5
(Note 1b)
(Note 3)
96 mJ
±20
W
1.0
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6690A FDS6690A 13’’ 12mm 2500 units
2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)
V
Page 2
FDS6
690A
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
Breakdown Voltage Temperature
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
Coefficient
I
Gate–Body Leakage
GSS
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 10 A
VGS= 10 V, ID = 11 A, TJ=125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
30 V
25
10
1 1.9
±100
3 V
–5
9.8
12.5
12.0
17.0
13.7
22.0
gFS Forward Transconductance VDS = 5 V, ID = 11 A 48 S
Dynamic Characteristics
C
Input Capacitance 1205 pF
iss
C
Output Capacitance 290
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.4
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 19 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 28 44 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 12 16 nC
Qgs Gate–Source Charge 3.4
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
trr Diode Reverse Recovery Time 24 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
is determined by the user's board design.
VDS = 15 V, V
= 0 V,
GS
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 11 A,
VGS = 5 V
VGS = 0 V, IS = 2.1 A
IF = 11 A, diF/dt = 100 A/µs
(Note 2)
pF
115
pF
9 19 ns
nC
4.0
nC
0.74 1.2 V
27 nC
mV/°C
µA
µA
nA
mV/°C
mΩ
Ω
a) 50°C/W when mounted
2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
= 8A,VDD = 30V, VGS = 10V
AS
on a 1in2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6690A Rev E1 (W)
Page 3
3.5V
4.5V
10V
6.0V
DRAIN-SOURCE ON -RESISTANCE
-55oC
25oC
FDS6
690A
Typical Characteristics
50
VGS = 10V
40
6.0V
30
20
, DRAIN CURRENT (A)
D
I
10
0
0 0.5 1 1.5 2
4.0V
4.5V
VDS, DRAIN-SOURCE VOLTAGE (V)
3.5.V
3.0V
3
VGS = 3.0V
2.5
2
, NORMALIZED
1.5
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 10 20 30 40 50
4.0V
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 11.0A
1.6
VGS = 10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
, JUNCTION TEMPERATURE (oC)
T
J
0.05
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
TA = 25oC
0.01
DS(ON)
R
0
2 4 6 8 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 5.5A
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
1 1.5 2 2.5 3 3.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
with Source Current and Temperature.
FDS6690A Rev E1 (W)
Page 4
CAPACITAN CE (pF)
, DRAIN CUR RENT (A)
1s
1ms
FDS6
690A
Typical Characteristics
10
ID = 11.0A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
VDS = 10V
20V
15V
1600
1200
800
C
400
C
0
0 5 10 15 20 25 30
oss
rss
VDS, DRAIN TO SOURCE VO LTAGE (V)
C
iss
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
100
R
LIMIT
DS(ON)
10
1
VGS = 10V
SINGLE PULSE
0.1
D
I
R
= 125oC/W
θ
JA
TA = 25oC
0.01
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
10ms
100ms
10s
DC
100
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
Tj=125
tAV, TIME IN AVALANCHE (mS)
Tj=25
f = 1MHz
VGS = 0 V
Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching
Capability Figure
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
SINGLE PULSE
R
= 125°C/W
JA
θ
TA = 25°C
Figure 11. Single Pulse Maximum Power Dissipation.
FDS6690A Rev E1 (W)
Page 5
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.05
0.1
0.2
Typical Characteristic
1
D = 0.5
0.1
0.02
0.01
THERMAL RESISTANCE
0.00 1
0.0001 0.001 0 .01 0.1 1 10 100 1000
0.01
SIN GLE PU LSE
T
t1, TIM E (sec )
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
ransient thermal response will change depending on the circuit board design.
R
(t) = r(t) * R
JA
θ
R
= 125 /W
θJA
P(pk)
t
1
t
2
TJ - TA = P * R
Duty Cycle, D = t1 / t
J
θ
FDS6690A
JA
θ
(t)
A
2
FDS6690A Rev E1 (W)
Page 6
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HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FDS6690A
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDS6690A Rev E1 (W)
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