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FDS6688
30V N-Channel PowerTrench
MOSFET
FDS6688
December 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• 16 A, 30 V. R
R
• Ultra-low gate charge (40 nC typical)
• High performance trench technology for extremely
DS(ON)
5
6
7
8
low R
• High power and current handling capability
= 6 mΩ @ VGS = 10 V
DS(ON)
= 7 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 16 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
±16
1.4
1.2
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1c) 125
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Sem iconductor Corporation
FDS6688 FDS6688 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
FDS6688 Rev C(W )
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FDS6688
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
30 V
21
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 16 A
= 4.5 V, ID = 15 A
V
GS
= 10 V, ID = 16 A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 16 A 84 S
1 1.8 3 V
–6
4.5
5.2
6.2
mV/°C
6
mΩ
7
9
Dynamic Characteristics
C
Input Capacitance 3888 pF
iss
C
Output Capacitance 931 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
401 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 14 25 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 69 110 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 40 56 nC
Qgs Gate–Source Charge 11 nC
Qgd Gate–Drain Charge
= 15 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
V
= 15 V, ID = 16 A,
DS
= 5 V
V
GS
GEN
= 6 Ω
32 51 ns
15 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
θCA
V
= 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
GS
is determined by the user's board design.
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6688 Rev C(W )
Page 3
E
Typical Characteristics
FDS6688
50
VGS = 10V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
00.250.50.751
4.5V5.0V
3.5V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
3.0V
2.2
2
VGS = 3.0V
1.8
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1020304050
3.5V
4.0V
I
, DRAIN CURRENT (A)
D
4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 16A
1.6
= 10V
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANC
0.6
-50 -25 0 25 50 75 100 125 150 175
, JUNCTION TEMPERATURE (oC)
T
J
0.014
0.011
0.008
, ON-RESISTANCE (OHM)
0.005
R
DS(ON)
0.002
TA = 25oC
246810
TA = 125oC
V
, GATE TO SOU RCE VOLTAGE (V)
GS
6.0V
10V
ID = 8A
Figure 3. On-Resistance Variation with
Temperature.
150
VDS = 5V
120
90
60
, DRAIN CURRENT (A)
D
I
30
0
1.522.533.54
TA =125oC
25oC
-55oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
, BODY DIO DE FORWARD VOL TAGE (V)
V
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6688 Rev C(W )
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)
Typical Characteristics
FDS6688
10
ID = 16A
8
6
4
2
, GATE-SOURCE VOLTAGE ( V)
GS
V
0
0 20406080
Q
, GATE CHARGE (nC)
g
VDS = 5V
10V
15V
6000
5000
4000
3000
2000
CAPACITANCE (pF)
1000
0
0 5 10 15 20 25 30
C
OSS
C
RSS
V
C
ISS
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A
D
I
VGS = 10V
SINGLE PULSE
0.1
= 125oC/W
R
θ
JA
T
= 25oC
A
0.01
0.01 0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
V
DS
10s
DC
100ms
1s
10ms
1ms
100µs
50
SINGLE PULSE
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W )
0
0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
R
f = 1MHz
V
GS
= 125°C/W
θ
JA
= 25°C
T
A
= 0 V
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.1
0.01
0.001
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) + R
JA
θ
R
= 125 °C/W
θJA
P(pk)
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
JA
θ
(t)
θJA
/ t
1
2
0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6688 Rev C(W )
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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