Datasheet FDS6675A Datasheet

February 2003

FDS6675A

30V P-Channel PowerTrench



MOSFET

FDS6675A

General Description

This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized f or power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 25V).

Applications

• Power management

• Load switch

• Battery protection

D

D

D

D

D

D

D

D

SO-8

Pin 1

SO-8

S

Absolute Maximum Ratings

G

G

S

S

S

S

S

TA=25oC unless otherwise noted

Features

• –11 A, –30 V R
R

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

• High power and current handling capability

DS(ON)

5
6
7
8

= 13 mΩ @ VGS = –10 V

DS(ON)

= 19 mΩ @ VGS = –4.5 V

DS(ON)

4
3
2
1

Symbol Parameter Ratings Units

V

Drain-Source Voltage –30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous
– Pulsed –50
PD

TJ, T

STG

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range –55 to +175

(Note 1a)

–11 A

(Note 1a)

2.5

(Note 1b)
(Note 1c)

±25

1.2
1

V

W

°C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1c)

(Note 1)

50

125

25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6675A FDS6675A 13’’ 12mm 2500 units

2003 Fairchild Semiconductor Corporation

This datasheet has been downloaded fromhttp://www.digchip.com at this page

°C/W
°C/W
°C/W

FDS6675A Rev C (W)

FDS6675A

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BV
∆T

I

Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –10

DSS

I

Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆TJ
R

DS(on)

Breakdown Voltage Temperature

DSS

Coefficient

J

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –10 V, VDS = –5 V –50 A

D(on)

= 0 V, ID = –250 µA

V

GS

I

= –250 µA, Referenced to 25°C

D

= VGS, ID = –250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –10 V, ID = –11 A

= –4.5 V, ID = –9 A

V

GS

= –10 V, ID = –11 A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –11 A 34 S

–30 V

–23

mV/°C

µA

–1 –1.6 –3 V

5

10
15
14

13
19
18

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 2330 pF

iss

C

Output Capacitance 610 pF

oss

C

Reverse Transfer Capacitance

rss

Rg Gate Resistance

Switching Characteristics

t

Turn–On Delay Time 14 25 ns

d(on)

(Note 2)

tr Turn–On Rise Time 12 22 ns
t

Turn–Off Delay Time 70 110 ns

d(off)

tf Turn–Off Fall Time
Qg Tot al Gate Charge 24 34 nC
Qgs Gate–Source Charge 6 nC
Qgd Gate–Drain Charge

V

= –15 V, V

DS

= 0 V,

GS

f = 1.0 MHz
V

=15 mV f= 1.0 MHz

GS

V

= –15 V, ID = –1 A,

DD

= –10 V, R

V

GS

V

= –15 V, ID = –11 A,

DS

V

= –5 V

GS

GEN

= 6 Ω

300 pF
4

mΩ

37 60 ns

9 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A
trr Diode Reverse Recovery Time 33 ns
Qrr Diode Reverse Recovery Charge

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

= –11A

I

F

d

iF/dt

= 100A/µs

(Note 2)

–0.7 –1.2 V

15 nC

a) 50°C/W when

mounted on a 1in2
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 105°C/W when

mounted on a .04 in2
pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

FDS6675A Rev C (W)

)

Typical Characteristics

FDS6675A

50

VGS = -10V

40

30

20

, DRAIN CURRENT (A

D

-I

10

0

00.511.522.5

-6.0V

-4.5V

-4.0V

-3.5V

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

-3.0V

2.4

2.2

VGS = - 3.5V

2

1.8

1.6

, NORMALIZED

1.4

DS(ON)

R

1.2

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 1020304050

-4.0V

-4.5V

, DRAIN CURRENT (A)

-I

D

-6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = -11A

= - 10V

V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.05

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

TA = 25oC

0.01

DS(ON)

R

0

246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-10V

ID = -5.5A

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = -10V

40

30

20

, DRAIN CURRENT (A)

D

-I

10

0

11.522.533.54

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-V

BODY DIODE FORWARD V O LTAGE (V)

SD,

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6675A Rev C (W)

µ

)

Typical Characteristics

FDS6675A

5

ID = -11A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 5 10 15 20 25 30

VDS = -10V

, GATE CHARGE (nC)

Q

g

-15V

-20V

3500

3000

2500

2000

1500

CAPACITANCE (pF)

1000

500

0

0 5 10 15 20 25 30

Coss

Crss

-V

Ciss

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

1

, DRAIN CURRENT (A)

D

-I

0.01

VGS = -10V

SINGLE PULSE

0.1
R

= 125oC/W

θ

JA

T

= 25oC

A

0.1 1 10 100

-V

, DRAIN-SOURCE VOL TAG E ( V )

DS

1s

10s

DC

100

1ms

10ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

f = 1 MHz

= 0 V

V

GS

SINGLE PULSE
R

= 125°C/W

θJA

= 25°C

T

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

r(t), NORMALIZED EFFE CT IVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

0.01

SINGLE PULSE

t

, TIME (sec)

1

R

(t) = r(t) * R

θJA

R

= 125oC/W

θJA

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

θJA

(t)

θJA

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6675A Rev C (W)

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2