Page 1
FDS6673BZ_F085
P-Channel PowerTrench
-30V, -14.5A, 7.8mΩ
®
MOSFET
FDS6673BZ_F085 P-Channel PowerTrench
July 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistan
ce.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
D
D
D
D
G
S
SO-8
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Note1a) -14.5 A
-Pulsed -75 A
Power Dissipation for Single Operation (Note1a) 2.5
(Note1c) 1.0
Operating and Storage Temperature -55 to 150 °C
S
S
= 25°C unless otherwise noted
A
Features
Max r
Max r
Extended V
HBM ESD protection level of 6.5kV typical (note 3)
High performance trench technology for extremely low
r
DS(on)
High power and current handling capability
RoHS compliant
Qualified to AEC Q101
5
6
7
8
DS(on)
DS(on)
= 7.8mΩ, V
= 12mΩ, V
range (-25V) for battery applications
GS
= -10V, ID = -14. 5A
GS
= -4.5V, ID = -12A
GS
4
3
2
1
®
MOSFET
W (Note1b) 1.2
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS6673BZ FDS6673BZ
©2009 Fairchild Semiconductor Corporation
FDS6673BZ
_F085 Rev. A
_F085 13’’ 12mm 2500 units
www.fairchildsemi.com1
Page 2
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
J
Off Characteristics
B
VDSS
∆B
∆T
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -24V, V
Gate to Source Leakage Current VGS = ±25V, V
ID = -250µA, referenced to
25°C
= 0V -1 µA
GS
= 0V ±10 µA
DS
-20 mV/°C
FDS6673BZ_F085 P-Channel PowerTrench
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.9 -3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = -5V, ID = -14.5A 60 S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 600 800 pF
Reverse Transfer Capacitance 600 900 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 16 29 ns
Turn-Off Delay Time 225 36 ns
Fall Time 105 167 ns
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge 8 nC
Gate to Drain Charge 23.5 nC
(Note 2)
ID = -250µA, referenced to
25°C
V
= -10V , ID = -14.5A 6.5 7.8
GS
= -4.5V, ID = -12A 9.6 12
V
GS
= -10V, ID = -14.5A
V
GS
= 125oC
T
J
= -15V, VGS = 0V,
V
DS
f = 1.0MHz
8.1 mV/°C
9.7 12
3500 4700 pF
14 26 ns
= -15V, ID = -1A
V
DD
V
= -10V, RGS = 6Ω
GS
V
= -15V, VGS = -10V,
DS
= -14.5A
I
D
= -15V, VGS = -5V,
V
DS
I
= -14.5A
D
88 124 nC
46 65 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6673BZ_F085 Rev. A
Source to Drain Diode Forward Voltage V
= 0V, IS = -2.1A -0.7 -1.2 V
GS
Reverse Recovery Time IF = 14.5A, di/dt = 100A/µs 45 ns
Reverse Recovery Charge IF = 14.5A, di/dt = 100A/µs 34 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50 oC/W (10 sec)
when mounted on a 1 in
pad of 2 oz copper
is determined by the user’s board design.
θCA
2
b) 105 oC/W when mounted
on a .04 in
copper
2
pad of 2 oz
o
C/W when mounted
c) 125
on a minimun pad
www.fairchildsemi.com2
Page 3
Typical Characteristics
FDS6673BZ_F085 P-Channel PowerTrench
TJ = 25°C unless otherwise noted
80
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
01234
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= - 4V
GS
VGS = - 10V
VGS = - 5V
V
= - 4.5V
GS
VGS = - 3.5V
V
= - 3V
GS
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.5
I
= -14.5A
D
1.4
VGS = -10V
1.3
1.2
1.1
1.0
0.9
NORMALIZED
0.8
0.7
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160
T
JUNCTION TEMPERATURE
,
J
o
C
(
)
4.0
3.8
3.6
V
= -3.5V
GS
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
NORMALIZED
1.6
1.4
1.2
1.0
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
10 20 30 40 50 60 70 80
-ID, DRAIN CURRENT(A)
Figure 2.
Normalized On-Resistance vs Drain
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= -4V
GS
V
= -4.5V
GS
VGS = -5V
VGS = -10V
Current and Gate Voltage
25
ID = -7A
)
20
Ω
m
(
15
10
, DRAIN TO SOURCE
5
ON-RESISTANCE
DS(on)
r
0
246810
-V
,
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
GATE TO SOURCE VOLTAGE (V)
®
MOSFET
Figure 3.
Normalized On Resistance vs Junction
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= -6V
DS
60
, DRAIN CURRENT (A)
D
-I
40
20
0
TJ = 25oC
2.0 2.5 3.0 3.5 4.0 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
FDS6673BZ_F085 Rev. A
Temperature
TJ = 150oC
TJ = -55oC
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
00
VGS = 0V
10
o
C
TJ = 150
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
1E-3
-I
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode Forward
TJ = 25
TJ = -55
o
C
o
C
Voltage vs Source Current
www.fairchildsemi.com3
Page 4
Typical Characteristics T
= 25°C unless otherwise noted
J
FDS6673BZ_F085 P-Channel PowerTrench
10
8
V
= -10V
6
4
DD
V
VDD = -20V
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
-V
0 20 40 60 80 100
Figure 7.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
1000
100
(uA)
g
-I
10
1
0.1
0.01
TJ = 150oC
TJ = 25oC
1E-3
1E-4
0 5 10 15 20 25 30 35
-VGS(V)
DD
= -15V
6000
C
iss
1000
C
rss
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
100
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source Voltage
40
10
, AVALANCHE CURRENT(A)
AS
-I
TJ = 125oC
1
10
-2
-1
10
tAV, TIME IN AVALANCHE(ms)
0
10
C
oss
TJ = 25oC
1
10
30
®
MOSFET
2
10
3
10
Figure 9.
16
12
8
4
, DRAIN CURRENT (A)
D
-I
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE
Figure 11.
Maximum Continuous Drain Current vs
Ambient Temperature
FDS6673BZ_F085 Rev. A
VGS = -4.5V
Ig vs V
GS
Figure 10.
Unclamped Inductive Switching
Capability
100
10
V
= -10V
GS
1
THIS A REA IS
LIMITED BY r
, DRAIN CURRENT (A)
0.1
D
-I
0.01
0.01 0.1 1 10 100 500
o
(
C
)
DS(on)
SINGLE PULSE
= MAX RATED
T
J
= 125oC/W
R
JA
θ
T
= 25oC
C
-VDS, DRAIN to SOURCE VOLTAGE (V)
100μs
1ms
10 ms
100 ms
1s
10s
DC
Figure 12. Forward Bias Safe Operating Area
www.fairchildsemi.com4
Page 5
FDS6673BZ_F085 P-Channel PowerTrench
Typical Characteristics T
4
10
3
10
2
10
10
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
1
0.5
10
0.1
JA
θ
Z
0.01
IMPEDANCE,
1E-3
NORMALIZED THERMAL
SINGLE PULSE
R
θ
JA
T
A
-4
2
1
DUTY CYCLE-DESCEND ING ORD ER
D = 0.5
0.2
0.1
0.05
0.02
0.01
VGS = -10V
= 125oC/W
= 25oC
-3
10
Figure 13. Junction-to-Case Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
-2
10
-1
10
t, PULSE WIDTH (sec)
SINGLE PULSE
R
= 125oC/W
θ
JA
11010210
P
DM
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
θJA
x R
2
θJA
t
1
+ T
3
®
MOSFET
t
2
A
1E-4
-4
10
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (sec)
-1
10
11010210
3
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
FDS6673BZ_F085 Rev. A
www.fairchildsemi.com5
Page 6
tm
®
tm
tm
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The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconduct or and/or its global sub sidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
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EZSWITCH™ *
™*
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Fairchild Semiconductor
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FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
*
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
®
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
PDP SPM™
Power-SPM™
®
SM
®
PowerTrench
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Saving our world, 1mW /W /kW at a time™
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SPM
STEALTH™
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SupreMOS™
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THEREIN, WHICH COVERS THESE PRODUCTS.
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TRUECURRENT™*
μSerDes™
®
UHC
Ultra FRFET™
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FDS6673BZ_F085 P-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the indust ry. All manufactures of semiconductor product s are experiencing counterfeiting of the ir
parts. Customers who inadvertently purchase counterfei t parts ex perience many proble ms such as loss of brand reputa tio n, substa ndar d pe rformance, f ail ed
application, and increased cost of production and manufacturing delays. Fairchil d is taki ng stron g measures to pro tect ourselve s and our customers from the
proliferation of counterfeit parts. Fairchild strongl y encourages customers t o purchase Fairchil d parts eith er directly from Fairchild o r from Authorized Fair child
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expecte d to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datashe et is for reference information only .
Rev. I40
FDS6673BZ_F085 Rev. A
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