Page 1
FDS6673BZ
P-Channel PowerTrench
-30V, -14.5A, 7.8m:
®
MOSFET
FDS6673BZ P-Channel PowerTrench
March 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistan
ce.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
D
D
D
D
G
S
SO-8
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Note1a) -14.5 A
-Pulsed -75 A
Power Dissipation for Single Operation (Note1a) 2.5
(Note1c) 1.0
Operating and Storage Temperature -55 to 150 °C
S
S
= 25°C unless otherwise noted
A
Features
Max r
Max r
Extended V
HBM ESD protection level of 6.5kV typical (note 3)
High performance trench technology for extremely low
r
DS(on)
High power and current handling capability
RoHS compliant
6
8
= 7.8m:VGS= -10V, ID = -14. 5A
DS(on)
= 12m:VGS= -4.5V, ID = -12A
DS(on)
range (-25V) for battery applications
GS
5
4
3
7
2
1
®
MOSFET
W (Note1b) 1.2
Thermal Characteristics
R
TJA
R
TJC
Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS6673BZ FDS6673BZ 13’’ 12mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDS6673BZ Rev. B2
www.fairchildsemi.com1
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Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
'B
'T
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V
Breakdown Voltage Temperature
Coefficient
ID = -250PA, referenced to
25°C
-20 mV/°C
Zero Gate Voltage Drain Current VDS = -24V, VGS= 0V -1 PA
Gate to Source Leakage Current VGS = ±25V, VDS= 0V ±10 PA
FDS6673BZ P-Channel PowerTrench
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -1 -1.9 -3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = -5V, ID = -14.5A 60 S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 600 800 pF
Reverse Transfer Capacitance 600 900 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 16 29 ns
Turn-Off Delay Time 225 36 ns
Fall Time 105 167 ns
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge 8 nC
Gate to Drain Charge 23.5 nC
(Note 2)
ID = -250PA, referenced to
25°C
V
= -10V , ID = -14.5A 6.5 7.8
GS
= -4.5V, ID = -12A 9.6 12
V
GS
= -10V, ID = -14.5A
V
GS
= 125oC
T
J
= -15V, VGS = 0V,
V
DS
f = 1.0MHz
8.1 mV/°C
9.7 12
3500 4700 pF
14 26 ns
= -15V, ID = -1A
V
DD
V
= -10V, RGS = 6:
GS
V
= -15V, VGS = -10V,
DS
= -14.5A
I
D
= -15V, VGS = -5V,
V
DS
I
= -14.5A
D
88 124 nC
46 65 nC
m:
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
TJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6673BZ Rev. B2
Source to Drain Diode Forward Voltage VGS= 0V, IS= -2.1A -0.7 -1.2 V
Reverse Recovery Time IF = 14.5A, di/dt = 100A/Ps45ns
Reverse Recovery Charge IF = 14.5A, di/dt = 100A/Ps34nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
TJC
a) 50 oC/W (10 sec)
when mounted on a 1 in
pad of 2 oz copper
is determined by the user’s board design.
TCA
2
b) 105 oC/W when mounted
on a .04 in
copper
2
pad of 2 oz
o
C/W when mounted
c) 125
on a minimun pad
www.fairchildsemi.com2
Page 3
Typical Characteristics T
:
= 25°C unless otherwise noted
J
FDS6673BZ P-Channel PowerTrench
80
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
01234
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
= - 4V
GS
VGS = - 10V
VGS = - 5V
V
= - 4.5V
GS
VGS = -3.5V
VGS= - 3V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.5
ID= -14.5A
NORMALIZED
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
DRAIN TO SOURCE ON-RESISTANCE
= -10V
V
GS
-80 -40 0 40 80 120 160
T
, JUNCTION TEMPERATURE (
J
o
C)
4.0
3.8
3.6
V
= -3.5V
GS
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
NORMALIZED
1.6
1.4
1.2
1.0
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
10 20 30 40 50 60 70 80
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
= -4V
GS
V
= -4.5V
GS
VGS = -5V
VGS = -10V
-ID, DRAIN CURRENT(A)
Figure 2.
Normalized On-Resistance vs Drain
Current and Gate Voltage
25
ID = -7A
)
20
(m
15
10
, DRAIN TO SOURCE
5
ON-RESISTANCE
DS(on)
r
0
246810
-V
, GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
®
MOSFET
Figure 3.
Normalized On Resistance vs Junction
80
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
V
60
40
20
, DRAIN CURRENT (A)
D
-I
0
2.0 2.5 3.0 3.5 4.0 4.5
Figure 5. Transfer Characteristics
FDS6673BZ Rev. B2
Temperature
= -6V
DS
TJ = 150oC
TJ = 25oC
TJ = -55oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
00
VGS = 0V
10
o
TJ= 150
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
1E-3
-I
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
C
o
TJ = 25
C
o
TJ = -55
C
Source to Drain Diode Forward
Voltage vs Source Current
www.fairchildsemi.com3
Page 4
Typical Characteristics T
T
= 25°C unless otherwise noted
J
FDS6673BZ P-Channel PowerTrench
10
8
V
= -10V
6
DD
V
VDD = -20V
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
-V
0 20 40 60 80 100
Qg, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics Figure 8.
1000
100
(uA)
g
-I
10
1
0.1
0.01
TJ= 150oC
TJ = 25oC
1E-3
1E-4
0 5 10 15 20 25 30 35
-VGS(V)
DD
= -15V
6000
C
iss
1000
C
rss
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
100
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source Voltage
40
10
, AVALANCHE CURRENT(A)
AS
-I
TJ = 125oC
1
10
-2
-1
10
0
10
tAV, TIME IN AVALANCHE(ms)
C
oss
TJ = 25oC
1
10
30
®
MOSFET
2
10
3
10
16
12
8
4
, DRAIN CURRENT (A)
D
-I
0
25 50 75 100 125 150
Figure 11.
FDS6673BZ Rev. B2
Maximum Continuous Drain Current vs
Figure 9.
VGS = -4.5V
Ig vs V
GS
V
GS
TA, AMBIENT TEMPERATURE
Ambient Temperature
= -10V
o
(
Figure 10.
Unclamped Inductive Switching
Capability
100
10
1
THIS AREA IS
LIMITED BY r
, DRAIN CURRENT (A)
0.1
D
-I
0.01
0.01 0.1 1 10 100 500
C
)
DS(on)
SINGLE PULSE
= MAX RATED
T
J
= 125oC/W
R
JA
T
= 25oC
C
-VDS, DRAIN to SOURCE VOLTAGE (V)
100Ps
1ms
10 ms
100 ms
1s
10s
DC
Figure 12. Forward Bias Safe Operating Area
www.fairchildsemi.com4
Page 5
T
T
T
FDS6673BZ P-Channel PowerTrench
Typical Characteristics T
4
10
3
10
2
10
10
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
1
0.5
10
-4
SINGLE PULSE
R
JA
T
A
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.1
JA
Z
0.2
0.1
0.05
0.02
0.01
0.01
IMPEDANCE,
1E-3
NORMALIZED THERMAL
VGS = -10V
= 125oC/W
= 25oC
-3
10
Figure 13. Single Pulse Maximum Power Dissipation
= 25 °C unless otherwise noted
J
-2
10
-1
10
t, PULSE WIDTH (sec)
SINGLE PULSE
R
= 125oC/W
JA
11010210
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
TJA
1/t2
x R
TJA
+ T
2
A
3
®
MOSFET
1E-4
-4
10
-3
10
-2
10
-1
10
11010210
3
t, RECT ANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
FDS6673BZ Rev. B2
www.fairchildsemi.com5
Page 6
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
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EcoSPARK
EfficentMax™
EZSWITCH™ *
™
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FACT
FAST
FastvCore™
FlashWriter
FPS™
F-PFS™
®
®
tm
®
®
®
®
*
®
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
tm
PDP SPM™
Power-SPM™
PowerTrench
®
®
®
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PowerXS™
SM
Programmable Active Droop™
®
QFET
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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®
The Power Franchise
®
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TriFault Detect™
TRUECURRENT™*
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tm
®
®
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDS6673BZ P-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
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.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDS6673BZ Rev. B2
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I39
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