Page 1
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
FDS6576 P-Channel 2.5V Specified PowerTrench
December 2006
tm
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench
management applications with a wide range of gate
drive voltage (2.5V - 12V).
®
®
process. It has been optimized for power
Applications
Load switch
•
• Battery protection
• Power management
–11 A, –20 V. R
R
• Extended V
•
Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
= 0.014 :@ VGS = –4.5 V
DS(ON)
= 0.020 :@ VGS = –2.5 V
DS(ON)
range (r12V) for battery applications.
GSS
.
• High power and current handling capability.
• RoHS Compliant.
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) –11 A
– Pulsed –50
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a) 2.5
(Note 1b)
(Note 1c)
r 12
1.2
1.0
MOSFET
V
W
qC
Thermal Characteristics
R
TJA
R
TJA
R
TJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1c) 125
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6576 FDS6576 13’’ 12mm 2500 units
2006 Fairchild Semiconductor Corpora tion
qC/W
qC/W
qC/W
FDS6576 Rev E3
Page 2
FDS6576 P-Channel 2.5V Specified PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BVDSS
'T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = –250 PA
V
GS
I
= –250 PA, Referenced to 25qC
D
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
–20 V
–13
mV/qC
On Characteristics (Note 2)
V
GS(th)
'VGS(th)
'T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = –250 PA
V
DS
I
= –250 PA, Referenced to 25qC
D
VGS = –4.5 V, ID = –11 A
V
= –2.5 V, ID = –8.8 A
GS
= –4.5 V, ID = –11 A, TJ=125qC
V
GS
On–State Drain Current VGS = –4.5 V, VDS = –5 V –25 A
Forward Transconductance VDS = –4.5 V, ID = –11 A 50 S
–0.6 –0.83 –1.5 V
3.5
8.2
11.5
11.1
mV/qC
14
20
23
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 4044 pF
Output Capacitance 955 pF
V
= –10 V, V
DS
f = 1.0 MHz
GS
= 0 V,
504Reverse Transfer Capacitance pF
Switching Characteristics (Note 2)
= –10 V, ID = –1 A,
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 18 32 ns
Turn–On Rise Time 17 31 ns
Turn–Off Delay Time 124 198 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 43 60 nC
Gate–Source Charge 7 nC
Gate–Drain Charge
V
DD
V
= –4.5 V, R
GS
= –10 V, ID = –11 A,
V
DS
= –4.5 V
V
GS
GEN
= 6 :
79 126 ns
12 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
TJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
TJC
TCA
V
= 0 V, IS = –2.1 A (Note 2) –0.66 –1.2 V
GS
is determined by the user's board design.
PA
m:
MOSFET
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted
on a minimum pad.
FDS6576 Rev E3
Page 3
Typical Characteristics
FDS6576 P-Channel 2.5V Specified PowerTrench
50
VGS = 10V
6.0V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0 0.5 1 1.5 2 2.5
4.5V
3.5V
V
DS
3.0V
, DRAIN-SOURCE VOLTAGE (V)
2.5V
2.25
2
1.75
, NORMALIZED
1.25
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
0.75
VGS = 3.0V
1.5
1
0 1020304050
3.5V
4.5V
, DRAIN CURRENT (A)
I
D
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 12A
1.6
V
= 10V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 - 125 150
25 0 25 50 75 100
T
, JUNCTION TEMPERATURE (oC)
J
0.03
0.025
0.02
0.015
, ON-RESISTANCE (OHM)
0.01
DS(ON)
R
0.005
TA = 25oC
2468
TA = 125oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
10V
ID = 6 A
MOSFET
10
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
1.5 2 2.5 3 3.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA= 125oC
25oC
-55oC
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6576 Rev E3
Page 4
p
Typical Characteristics
FDS6576 P-Channel 2.5V S
10
ID = 12A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25 30 35
Q
, GATE CHARGE (nC)
g
VDS = 10V
20V
15V
3000
2500
2000
1500
1000
CAPACITANCE (pF)
C
500
C
RSS
0
0 5 10 15 20 25 30
OSS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
C
ISS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
100ms
1s
1
, DRAIN CURRENT (A)
D
I
VGS = 10V
SINGLE PULSE
0.1
R
= 125oC/W
TJA
T
= 25oC
A
0.01
0.01 0.1 1 10 100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
10s
DC
100⼡ SINGLE PULSE
1ms
10ms
50
R
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100
t
, TIME (sec)
1
TJA
f = 1MHz
V
= 0 V
GS
= 125Ⱌ/W
T
= 25Ⱌ
A
ecified PowerTrench
MOSFET
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
(t) = r(t) + R
JA
P(pk)
T
R
= 125 Ⱌ/W
JA
T
t
0.1
0.2
0.1
0.05
0.02
0.01
0.01
- TA = P * R
T
SINGLE PULSE
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
0.0001 0.001 0.01 0.1 1 100 1000
10
J
Duty Cycle, D = t
JA
T
1
t
2
(t)
JA
T
/ t
1
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6576 Rev E3
Page 5
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HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
®
UniFET™
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDS6576 Rev E3
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