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FDS6572A
FDS6572A
20V N-Channel PowerTrench MOSFET
September 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings T
S
S
=25oC unless otherwise noted
A
Features
• 16 A, 20 V. R
• Low gate charge (57 nC)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
5
6
7
8
= 6 mΩ @ VGS = 4.5 V
DS(ON)
R
= 8 mΩ @ VGS = 2.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage ±12 V
Drain Current – Continuous (Note 1a) 16 A
– Pulsed 80
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175
1.2
1.0
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6572A FDS6572A 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS6572A Rev C (W)
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Electrical Characteristics T
FDS6572A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 12 mV/°C
20 V
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 16 A
VGS = 2.5 V, ID = 14 A
VGS = 4.5 V, ID = 16 A,TJ=125°C
0.6 0.8 1.5 V
–4 mV/°C
5.7
On–State Drain Current VGS = 4.5 V, VDS = 5 V 40 A
Forward Transconductance VDS = 5 V, ID = 16 A 96 S
4
6
5
8
9
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 5914 pF
Output Capacitance 1433 pF
Reverse Transfer Capacitance
VDS = 10 V, V
f = 1.0 MHz
GS
= 0 V,
797 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 21 34 ns
Turn–On Rise Time 25 40 ns
Turn–Off Delay Time 102 163 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 57 80 nC
Gate–Source Charge 10 nC
Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
VDS = 10 V, ID = 16 A,
VGS = 4.5 V
66 106 ns
16 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.6 1.2 V
is determined by the user's board design.
µA
mΩ
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
FDS6572A Rev C (W)
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Typical Characteristics
I
D
, DRAIN CURRENT (A)
3.0V
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
, DRAIN CURRENT (A)
I
S
, REVERSE DRAIN CURRENT (A)
FDS6572A
100
VGS = 4.5V
80
60
40
20
0
0 0.5 1 1.5 2 2.5
2.5V
2.0V
1.8V
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.2
2
VGS = 1.8V
1.8
1.6
1.4
1.2
R
1
0.8
0 20 40 60 80 100
2.0V
2.5V
3.0V
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 16A
VGS = 4.5V
1.4
1.2
1
R
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
0.012
0.01
0.008
0.006
0.004
0.002
TA = 25oC
1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC
4.5V
ID = 8A
Figure 3. On-Resistance Variation with
Temperature.
90
VDS = 5V
75
60
45
30
15
0
0.5 1 1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC 25oC
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6572A Rev C (W)
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Typical Characteristics
V
, GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)
I
D
, DRAIN CURRENT (A)
100µs
1ms
P(pk), PEAK TRANSIENT POWER (W)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
P(pk)
FDS6572A
5
ID = 16A VDS = 5V
4
3
2
1
GS
0
0 10 20 30 40 50 60 70
Qg, GATE CHARGE (nC)
15V
10V
8400
7000
5600
4200
2800
1400
0
0 5 10 15 20
C
ISS
C
OSS
C
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
VGS = 4.5V
SINGLE PULSE
0.1
R
= 125oC/W
θJA
TA = 25oC
0.01
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
10ms
100ms
1s
10s
DC
50
40
30
20
10
0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
SINGLE PULSE
R
θJA
TA = 25°C
f = 1 MHz
VGS = 0 V
= 125°C/W
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) + R
θJA
R
= 125oC/W
θJA
t
1
t
2
TJ - TA = P * R
θJA
Duty Cycle, D = t1 / t
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6572A Rev C (W)
θJA
(t)
2
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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