Page 1
FDS6298
30V N
-
Channel Fast Switching PowerTrench
MOSFE
T
tm
April 2007
FDS6298
30V N-Channel Fast Switching PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
Control Switch for DC-DC Buck converters
Notebook Vcore
Telecom / Networking Point of Load
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
Symbol
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID
PD
E
AS
TJ, T
STG
Drain Current – Continuous
– Pulsed 50
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range –55 to +150
Parameter Ratings Units
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
13 A, 30 V. R
R
Low gate charge (10nC @ VGS=5V)
Very low Miller Charge (3nC)
Low Rg (1 Ohm)
ROHS Compliant
5
6
7
8
(Note 1a)
13
(Note 1a)
3.0
(Note 1b)
1.2
(Note 3)
181
= 9 mΩ @ VGS = 10 V
DS(ON)
= 12 mΩ @ VGS = 4.5 V
DS(ON)
±20
4
3
2
1
V
A
W
mJ
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2007 Fairchild Semiconductor Corporation
FDS6298 FDS6298 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
DS6298 Rev. C1 ( W)
F
Page 2
FDS6298
30V N
-
Channel Fast Switching PowerTrench
MOSFET
Electrical Characteristics
Symbol
Parameter Test Conditions Min Typ Max Units
TA = 25°C unless otherwise noted
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
Breakdown Voltage Temperature
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V - - 1
DSS
I
Gate–Body Leakage
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(ON)
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VGS= 10 V, ID = 13 A, TJ=125°C
30 - - V
- 30 -
- -
1 1.7
- –5 -
7.4
9.4
11
mV/°C
±100
3 V
mV/°C
9
12
15
gFS Forward Transconductance VDS = 10 V, ID = 13 A - 58 - S
Dynamic Characteristics
C
Input Capacitance - 1108 - pF
iss
C
Output Capacitance - 310
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 0.3 1 1.7
Switching Characteristics
t
Turn–On Delay Time - 11 20 ns
d(on)
(Note 2)
tr Turn–On Rise Time - 5 10 ns
t
Turn–Off Delay Time - 27 43 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge - 10 14 nC
Qgs Gate–Source Charge - 3 - nC
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics
VSD
trr Diode Reverse Recovery Time IF = 13 A, dIF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge - 13 - nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
is determined by the user's board design.
VDS = 15 V, V
GS
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
VDS = 15 V, ID = 13 A,
VGS = 5 V
VGS = 0 V, IS = 2.1 A
= 0 V,
= 6 Ω
(Note 2)
- pF
- 109
- pF
- 7 14 ns
- 3 - nC
- 0.74 1.2 V
- 27 - ns
µA
nA
mΩ
Ω
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6298 Rev. C1 (W)
Page 3
10V
FDS6298
30V N
-
Channel Fast Switching PowerTrench
MOSFET
Typical Characteristics
80
VGS = 10V
70
6.0V
60
50
40
30
, DRAIN CURRENT (A)
D
20
I
10
0
0 0.5 1 1.5 2 2.5
4.5V
4.0V
3.5.V
VDS, DRAIN-SOURCE VOLTAGE (V)
3.0V
2.6
2.4
VGS = 3.0V
2.2
2
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 10 20 30 40 50 60 70 80
3.5V
4.0V
4.5V
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 13A
VGS = 10V
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.028
0.024
0.02
0.016
0.012
, ON-RESISTANCE (OHM)
DS(ON)
0.008
R
0.004
2 4 6 8 10
TA = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
5.0V
6.0V
ID = 6.5A
80
VDS = 5V
70
60
50
40
30
, DRAIN CURRENT (A)
20
D
I
10
0
1.5 2 2.5 3 3.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
125
100
VGS = 0V
25oC
o
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
-55oC
with Source Current and Temperature.
FDS6298 Rev. C1 (W)
Page 4
1s
1ms
FDS6298
30V N
-
Channel Fast Switching PowerTrench
MOSFET
Typical Characteristics
10
ID = 13A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
VDS = 10V
20V
15V
1500
C
1200
900
600
CAPACITANCE (pF)
300
0
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ISS
C
OSS
C
RSS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
100ms
1
, DRAIN CURRENT (A)
I
D
0.01
VGS = 10V
0.1
SINGLE PULSE
R
= 125oC/W
θ
JA
TA = 25oC
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
10s
DC
100µs
10ms
100
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100 1000
125
tAV, TIME IN AVALANCHE (mS)
25
f = 1MHz
VGS = 0 V
Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching
Capability
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W )
0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
SINGLE PULSE
R
= 125°C/W
θ
JA
TA = 25°C
Figure 11. Single Pulse Maximum Power Dissipation.
FDS6298 Rev. C1 (W)
Page 5
SINGLE PULSE
0.02
0.05
0.1
0.2
FDS6298
30V N
-
Channel Fast S
witching PowerTrench
MOSFET
Typical Characteristics
1
D = 0.5
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
t1, TIME (sec)
R
(t) = r(t) * R
JA
θ
R
JA
θ
P(pk)
TJ - TA = P * R
Duty Cycle, D = t1 / t
= 125 °C/W
t
1
t
2
θ
JA
θ
(t)
JA
2
FDS6298 Rev. C1 (W)
Page 6
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Rev. I26
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