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FDS6294
February 2007
FDS6294
30V N-Channel Fast Switching PowerTrench
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
• Power management
• Load switch
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
G
G
S
S
S
S
S
Features
• 13 A, 30 V. R
R
• Low gate charge (10 nC typical)
• High performance trench technology for extremely
low R
• High power and current handling capability.
• RoHS Compliant
MOSFET
DS(ON)
5
6
7
8
= 11.3 mΩ @ VGS = 10 V
DS(ON)
= 14.4 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
tm
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 50
PD
E
AS
TJ, T
STG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range –55 to +175
(Note 1a)
13 A
(Note 1a)
3.0
(Note 1b)
(Note 3)
181
± 20
W
1.2
mJ
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6294 FDS6294 13’’ 12mm 2500 units
2007 Fairchild Semiconductor Corporation
FDS6294 Rev D1 (W)
V
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FDS6
2
94
Electrical Characteristics
Symbol
Parameter Test Conditions Min Typ Max Units
TA = 25°C unless otherwise noted
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
Breakdown Voltage Temperature
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = ± 20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VGS= 10 V, ID = 13 A, TJ=125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
30 V
27
1 1.8
–5
9.4
11.5
13.5
mV/°C
±100
3 V
mV/°C
11.3
14.4
16.5
gFS Forward Transconductance VDS = 10 V, ID = 13 A 48 S
Dynamic Characteristics
C
Input Capacitance 1205 pF
iss
C
Output Capacitance 323
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 0.9
Switching Characteristics
t
Turn–On Delay Time 9 18 ns
d(on)
(Note 2)
tr Turn–On Rise Time 4 8 ns
t
Turn–Off Delay Time 24 48 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 10 14 nC
Qgs Gate–Source Charge 3.5
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
trr Diode Reverse Recovery Time IF = 13 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge 14 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
is determined by the user's board design.
VDS = 15 V, V
= 0 V,
GS
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 13 A,
VGS = 5 V
VGS = 0 V, IS = 2.1 A
102
6 12 ns
3 nC
(Note 2)
0.74 1.2 V
25 nS
pF
pF
nC
µA
nA
mΩ
Ω
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 11A,VDD = 30V, VGS = 10V
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6294 Rev D1 (W)
Page 3
25oC
F
DS6
2
94
Typical Characteristics
60
VGS = 10V
6.0V
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0 0.5 1 1.5 2 2.5
4.0V
4.5V
VDS, DRAIN-SOURCE VOLTAGE (V)
3.5.V
3.0V
2.2
2
VGS = 3.5V
1.8
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 10 20 30 40 50 60
4.0V
4.5V
ID, DRAIN CURRENT (A)
5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 13A
VGS = 10V
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
, JUNCTION TEMPERATURE (oC)
T
J
0.028
0.024
0.02
0.016
0.012
, ON-RESISTANCE (OHM)
DS(ON)
0.008
R
0.004
2 4 6 8 10
TA = 25oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
6.0V
10V
ID = 13A
Figure 3. On-Resistance Variation with
Temperature.
70
VDS = 5V
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
1.5 2 2.5 3 3.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
125
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
o
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
-55oC
with Source Current and Temperature.
FDS6294 Rev D1 (W)
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1s
1ms
P(pk), PEAK TRANSIENT POWER (W)
FDS6
2
94
Typical Characteristics
10
ID = 13A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
VDS = 10V
20V
15V
1500
C
1200
900
600
CAPACITANCE (pF)
300
0
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ISS
C
OSS
C
RSS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
100ms
1
, DRAIN CURRENT (A)
I
D
0.01
VGS = 10V
0.1
SINGLE PULSE
R
= 125oC/W
θ
JA
TA = 25oC
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
10s
DC
100
10ms
100
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100 1000
TJ=125
tAV, TIME IN AVALANCHE (mS)
TJ=25
f = 1MHz
VGS = 0 V
Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching
Capability Figure
50
SINGLE PULSE
R
JA
= 125°C/W
40
30
20
10
0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
θ
TA = 25°C
11. Single Pulse Maximum Power Dissipation.
FDS6294 Rev D1 (W)
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0.01
0.02
0.05
Typical Characteristics
1
D = 0.5
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.2
0.1
SINGLE PULSE
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
R
(t) = r(t) * R
t1, TIME (sec)
θ
JA
R
= 125 /W
θJA
P(pk)
TJ - TA = P * R
Duty Cycle, D = t1 / t
θ
JA
t
1
t
2
(t)
θ
JA
2
FDS6294 Rev D1 (W)
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FDS6294
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDS6294 Rev D1 (W)
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