Page 1
FDS5351
N-Channel PowerTrench® MOSFET
60V, 6.1A, 35mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
100% UIL Tested
RoHS Compliant
= 35mΩ at VGS = 10V, ID = 6.1A
DS(on)
= 42mΩ at VGS = 4.5V, ID = 5.5A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Inverter Switch
Synchronous Rectifier
Load Switch
April 2008
®
process that has
FDS5351 N-Channel PowerTrench
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 6.1
-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 73 mJ
Power Dissipation TA = 25°C (Note 1a) 5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
A
G
S
S
= 25°C unless otherwise noted
= 25°C (Note 1b) 2.5
A
5
D
D
6
D
7
D
8
G
4
S
3
S
2
S
1
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS5351 FDS5351 SO-8 13’’ 12mm 2500units
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
1
www.fairchildsemi.com
Page 2
FDS5351 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 V
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C 55 mV/°C
Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1 µA
Gate to Source Leakage Current VGS = ±20V, V
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 5V, ID = 6.1A 24 S
ID = 250µA, referenced to 25°C -6.2 mV/°C
VGS = 10V, ID = 6.1A 26.5 35.0
VGS = 10V, ID = 6.1A, TJ= 125°C 44.5 58.8
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 90 120 pF
Reverse Transfer Capacitance 50 75 pF
VDS = 30V, VGS = 0V,
f = 1MHz
985 1310 pF
Gate Resistance f = 1MHz 1.7 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 21 34 ns
VDD = 30V, ID = 6.1A,
VGS = 10V, R
GEN
= 6Ω
8 16 ns
Fall Time 2 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 3 nC
= 0V to 10V
GS
= 0V to 4.5V 9 13 nC
GS
VDD = 30V,
ID = 6.1A
19 27 nC
Gate to Drain “Miller” Charge 3.5 nC
mΩVGS = 4.5V, ID = 5.5A 32.4 42.0
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 15 27 nC
= 25°C, L = 3mH, I
J
a) 50°C/W when mounted on a
2
1in
pad of 2 oz copper.
= 7A, VDD = 60V, VGS = 10V.
AS
V
= 0V, IS = 6.1A (Note 2) 0.82 1.3
GS
V
= 0V, IS = 2.1A (Note 2) 0.76 1.2
GS
IF = 6.1A, di/dt = 100A/µs
θJC
2
24 38 ns
is guaranteed by design while R
b) 125°C/W when mounted on a
minimum pad.
V
is determined by
θCA
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Page 3
FDS5351 N-Channel PowerTrench
Typical Characteristics T
30
VGS = 10V
VGS = 4.5V
20
10
, DRAIN CURRENT (A)
D
I
0
0123
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
On-Region Characteristics
2.0
ID = 6.1A
1.8
V
= 10V
GS
1.6
1.4
1.2
NORMALIZED
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
Figu r e 3. Nor m a lized O n - Resis t a nce
vs Junction Temperature
VGS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = 3.5V
VGS = 3V
o
C)
3.0
VGS = 3V
VGS = 3.5V
2.5
VGS = 4V
2.0
1.5
NORMALIZED
1.0
PULSE DURATION = 80µs
DRAIN TO SOURCE ON-RESISTANCE
0.5
Figure 2.
DUTY CYCLE = 0.5%MAX
0102030
I
, DRAIN CURRENT(A)
D
Norma l i z e d O n - Resistanc e
V
= 4.5V
GS
V
= 10V
GS
vs Drain Current and Gate Voltage
100
ID = 6.1A
80
(mΩ)
60
40
, DRAIN TO
DS(on)
r
20
SOURCE ON-RESISTANCE
0
246810
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
On-Resistance vs Gate to
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
o
T
= 25
C
J
Source Voltage
®
MOSFET
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 5V
DS
20
TJ = 125oC
10
, DRAIN CURRENT (A)
D
I
0
12345
TJ = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
TJ = -55oC
100
V
= 0V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6.
TJ = 125oC
TJ = 25oC
TJ = -55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDS5351 N-Channel PowerTrench
Typical Characteristics T
10
ID = 6.1A
8
6
4
V
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
048121620
Figure 7.
Gate Charge Characteristics
8
6
4
, AVALANCHE CURRENT(A)
2
AS
I
1
0.01 0.1 1 10
Figure 9.
Switching Capability
VDD = 30V
= 20V
DD
Qg, GATE CHARGE(nC)
tAV, TIME IN AVALANCHE(ms)
TJ = 125oC
Uncl a m p e d I n duct i v e
= 25°C unless otherwise noted
J
VDD = 40V
TJ = 25oC
30
4000
C
iss
1000
C
oss
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8.
Capacitance vs Drain
C
rss
to Source Voltage
10
8
V
= 10V
GS
6
V
= 4.5V
GS
4
, DRAIN CURRENT (A)
D
I
2
R
= 50oC/W
θJA
0
25 50 75 100 125 150
T
, AMBIENT TEMPERATURE (
A
Figure 10.
Ma xim um Continuou s Dr ain
o
Current vs Ambient Temperature
®
MOSFET
C)
100
10
THIS AREA IS
1
LIMITED BY r
, DRAIN CURRENT (A)
0.1
D
I
0.01
0.01 0.1 1 10 100
DS(on)
SINGLE PULSE
= MAX RATED
T
J
o
= 125
θJA
A
= 25
C/W
o
C
R
T
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
1000
VGS = 10V
100
1ms
10ms
100ms
1s
10s
DC
300
10
), PEAK TRANSIENT POWER (W)
1
PK
P(
0.5
10-410-310-210
Figure 12.
-1
t, PULSE WIDTH (sec)
Sing le Pulse Maxim um
SINGLE PULSE
R
T
110
θJA
A
= 25
= 125
o
C
o
C/W
100 1000
Power Dissipation
4
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Page 5
FDS5351 N-Channel PowerTrench
Typical Characteristics T
2
1
θJA
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
-4
-3
10
θJA
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
= 125oC/W
10
-2
t, RECTANGULAR PULSE DURATION (sec)
-1
10
110
PEAK TJ = PDM x Z
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
100 1000
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
5
www.fairchildsemi.com
Page 6
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®
tm
tm
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subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
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®
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EZSWITCH™ *
™
®
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®
FACT
®
FAST
FastvCore™
FlashWriter
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*
®
* EZSWITCH™ and FlashWriter
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®
FRFET
Global Power Resource
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®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
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®
®
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Saving our world 1mW at a time™
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Ultra FRFET™
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FDS5351 N-Channel PowerTrench
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NO TICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE U NDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND TH E TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
6
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