Datasheet FDS4935A Datasheet (Fairchild Semiconductor)

March 2002

FDS4935A

Dual 30V P-Channel PowerTrench



MOSFET

FDS4935A

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been opt imized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V).

Applications

• Power management

• Load switch

• Battery protection

D1

D

D1

D

D2

D

D2

D

SO-8

Pin 1

SO-8

S2

Absolute Maximum Ratings T

G1

G

S1

S

G2

S

o

=25

C unless otherwise noted

A

Features

• –7 A, –30 V R R

• Low gate charge (15nC typical)

• Fast switching speed

• High performance trench te chnology for extremely

low R

• High power and current handling capability

DS(ON)

5 6 7 8

= 23 mΩ @ VGS = –10 V

DS(ON)

= 35 mΩ @ VGS = –4.5 V

DS(ON)

Q1

Q2

4 3 2 1

Symbol Parameter Ratings Units

V

Drain-Source Voltage –30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –7 A – Pulsed –30 PD PD

TJ, T

STG

Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b)

Operating and Storage Junction Temperature Range –55 to +175

(Note 1c)

±20

1

0.9

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 40

°C/W °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4935A FDS4935A 13’’ 12mm 2500 units

2002 Fairchild Semiconductor Corporation

FDS4935A Rev A(W)

A

FDS4935

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –10

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

J

Gate–Body Leakage, Forward VGS = –20 V, VDS = 0 V –100 nA Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 100 nA

= 0 V, ID = –250 µA

V

GS

= –250 µA, Referenced to 25°C

I

D

–30 V

–24

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –10 V, VDS = –5 V –30 A

D(on)

= VGS, ID = –250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –10 V, ID = –7 A

= –4.5 V, ID = –5.5 A

V

GS

= –10 V, ID = –7 A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –7 A 19 S

–1 –1.6 –3 V

4.4 19

28 26

23 35 34

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 1233 pF

iss

C

Output Capacitance 311 pF

oss

C

Reverse Transfer Capacitance

rss

= –15 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

152 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 13 23 ns

d(on)

tr Turn–On Rise Time 10 20 ns t

Turn–Off Delay Time 48 77 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 15 21 nC Qgs Gate–Source Charge 4.4 nC Qgd Gate–Drain Charge

= –15 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

V

= –15 V, ID = –7 A,

DS

= –5 V

V

GS

GEN

= 6 Ω

25 40 ns

4.5 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Drain–Source Diode Forward Voltage

is guaranteed by design while R

θJC

a) 78°C/W when

mounted on a 0.5in2 pad of 2 oz copper

θCA

V

= 0 V, IS = –2.1 A (Note 2) –0.75 –1.2 V

GS

is determined by the user's board design.

b) 125°C/W when

mounted on a 0.02 in2 pad of 2 oz copper

c) 135°C/W when mounted on a

minimum pad.

FDS4935A Rev A(W)

)

E

)

A

Typical Characteristics

FDS4935

50

VGS = -10V

-6.0V

40

30

20

, DRAIN CURRENT (A

D

-I

10

0

012345

-5.0V

-4.5V

-4.0V

-3.5V

-V

, DRAIN TO SOURCE VO LTAGE (V)

DS

-3.0V

2.4

2.2 VGS = -3.5V

2

1.8

1.6

, NORMALIZED

1.4

DS(ON)

R

1.2

1

DRAIN-SOURCE ON-RESISTANC

0.8

0 1020304050

-4.0V

-4.5V

-5.0V

-I

, DRAIN CURRENT (A)

D

-6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 ID = -7A

= -10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.08

0.06

0.04

, ON-RESISTANCE (OHM)

0.02

DS(ON)

R

0

246810

TA = 25oC

-V

, GATE TO SOURCE VO LTAGE (V)

GS

TA = 125oC

-10V

ID = -3.5A

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = -5.0V

40

30

20

, DRAIN CURRENT (A

D

-I

10

0

12345

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC 25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

-V

BODY DIODE FORWARD VOLTAGE (V)

SD,

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4935A Rev A(W)

)

A

Typical Characteristics

FDS4935

10

ID = -8.8A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 4 812162024

Q

, GATE CHARGE (nC)

g

VDS = -5V

-10V

-15V

2000 1800 1600 1400 1200 1000

800 600

CAPACITANCE (pF)

400 200

0

0 5 10 15 20 25 30

-V

C

ISS

C

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

VGS = -10V

SINGLE PULSE

, DRAIN CURRENT (A

D

0.1

-I

R

= 135oC/W

θ

JA

= 25oC

T

A

0.01

0.1 1 10 100

-V

DS

10s

DC

, DRAIN-SOURCE VOLTAGE (V)

1s

100ms

10ms

1ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

, TIME (sec)

t

1

SINGLE PULSE

R

θ

JA

T

f = 1 MHz V

GS

= 135°C/W

= 25°C

A

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

R

(t) = r(t) + R

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE

θJA

R

θJA

P(pk)

T

- TA = P * R

J

Duty Cycle, D = t

= 135 °C/W

t

1

t

2

θJA

(t)

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS4935A Rev A(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™ FAST

FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™

OPTOLOGIC



OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER

SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H7