Datasheet fds4675_f085 Datasheet

FDS4675_F085

40V P-Channel PowerTrench MOSFET

FDS4675_F085 P-Channel PowerTrench

February 2010

tm

General Description

This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).

Applications

• Power management

• Load switch

• Battery protection

D

D

D

D

SO-8

Pin 1

S

Absolute Maximum Ratings T

G

S

S

o

=25

C unless otherwise noted

A

Features

• –11 A, –40 V R

R

• Fast switching speed

• High performance trench technology for extremely

low R

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant

DS(ON)

5
6
7
8

= 0.013 Ω @ V

DS(ON)

= 0.017 Ω @ V

DS(ON)

4
3
2
1

= –10 V

GS

= –4.5 V

GS

Symbol Parameter Ratings Units

V

Drain-Source Voltage

DSS

V

Gate-Source Voltage ±20 V

GSS

ID Drain Current – Continuous (Note 1a)

– Pulsed

PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 2.4 (steady state)
(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range -55 to +175 °C

–40

–11
–50

1.4

1.2

®

MOSFET

V

A

W

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 (steady state), 50 (10 sec)

Thermal Resistance, Junction-to-Ambient (Note 1c) 125

Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4675 FDS4675_F085 13’’ 12mm 2500 units

©2010 Fairchild Semiconductor Corporation
FDS4675_F085 Rev. A

°C/W
°C/W
°C/W

www.fairchildsemi.com1

FDS4675_F085 P-Channel PowerTrench

Electrical Characteristics T

Symbol

Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆TJ

I

Zero Gate Voltage Drain Current VDS = –32 V, V

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

VGS = 0 V, I

I

= –250 µA, Referenced to 25°C –34 mV/°C

D

= –250 µA –40 V

D

= 0 V –1 µA

GS

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, I

GS(th)

∆VGS(th)
∆T

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain–Source

On–Resistance

I

= –250 µA, Referenced to 25°C

D

VGS = –10 V, ID = –11 A
VGS = –4.5 V, ID = –9.5 A
VGS=–10 V, ID =–11 A, T

I

On–State Drain Current VGS = –10 V, VDS = –5 V –25 A

D(on)

= –250 µA –1 –1.4 –3 V

D

4.6 mV/°C

10

13

13

17

15

=125°C

J

21

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –11 A 44 S

Dynamic Characteristics

C

Input Capacitance 4350 pF

iss

C

Output Capacitance 622 pF

oss

C

Reverse Transfer Capacitance

rss

VDS = –20 V, V
f = 1.0 MHz

= 0 V,

GS

290 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 20 36 ns

d(on)

tr Turn–On Rise Time 29 46 ns

t

Turn–Off Delay Time 95 152 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 40 56 nC

Qgs Gate–Source Charge 11 nC

Qgd Gate–Drain Charge

VDD = –20 V, ID = –1 A,
VGS = –4.5 V, R

GEN

= 6 Ω

VDS = –20 V, ID = –11 A,
VGS = –4.5 V

60 96 ns

13 nC

®

MOSFET

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A

VSD

Notes:

1. R

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS4675_F085 Rev. A www.fairchildsemi.com2

Drain–Source Diode Forward
Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

a) 50°C/W when

mounted on a 1in2
pad of 2 oz copper

is determined by the user's board design.

θCA

VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V

b) 105°C/W when

mounted on a .04 in2
pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

-3.0V

-3.5V

-4.5V

-6.0V

-10V

-6.0V

= -10V

Typical Characteristics

FDS4675_F085 P-Channel PowerTrench

50

VGS = -10V

40

30

20

, DRAIN CURRENT (A)

D

-I

10

0

0 0.5 1 1.5 2 2.5 3

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-2.5V

2.2

2

1.8
VGS = -3.0V

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

0 10 20 30 40 50

-3.5V

-4.0V

-4.5V

-ID, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = -11A

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.05

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

TA = 125oC

TA = 25oC

0

2 2.5 3 3.5 4 4.5 5

-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -5.5A

®

MOSFET

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = -5.0V

40

30

20

, DRAIN CURRENT (A)

D

-I

10

0

1 1.5 2 2.5 3 3.5

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

125oC

25oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

FDS4675_F085 Rev. A www.fairchildsemi.com3

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

TA = 125oC

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

25oC

-55oC

with Source Current and Temperature.

-20V

100µs

1ms

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

D = 0.5

Typical Characteristics

FDS4675_F085 P-Channel PowerTrench

6000

5000

4000

3000

2000

CAPACITANCE (pF)

1000

0

0 10 20 30 40

CISS

C

OSS

C

RSS

-VDS, DRAIN TO SOURCE VOLTAGE (V)

5

ID = -11A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 10 20 30 40 50

Qg, GATE CHARGE (nC)

VDS = -10V

-30V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

RDS(ON) LIMIT

1s

10ms

100ms

10

1

, DRAIN CURRENT (A)

-I

VGS = -4.5V

SINGLE PULSE

D

0.1

0.01

0.1 1 10 100

R

JA = 125

θ

TA = 25oC

o

C/W

-VDS, DRAIN-SOURCE VOLTAGE (V)

10s

DC

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

t1, TIME (sec)

SINGLE PULSE

R

θ

f = 1 MHz
VGS = 0 V

JA = 125°C/W

TA = 25°C

®

MOSFET

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

1

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depe nding on the circuit board design.

FDS4675_F085 Rev. A www.fairchildsemi.com4

Power Dissipation.

R

(t) = r(t) + R

θJA

R

θJA

TJ - TA = P * R

Duty Cycle, D = t1 / t2

= 125oC/W

t

1

t

2

θJA

(t)

θJA

tm

®

tm

tm

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FDS4675_F085 P-Channel PowerTrench

®

MOSFET

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Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary dat a will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time withou t
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

FDS4675_F085 Rev. A www.fairchildsemi.com5

Rev. I47