Datasheet fds4559_f085 Datasheet

tm

FDS4559_F085

60V Complementary PowerTrench



MOSFET

October 2008

FDS4559_F085 60V Complementary PowerTrench MOSFET

General Description

This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.

Applications

• DC/DC converter

• Power management

• LCD backlight inverter

D2

D

D2

D

D1

D

D1

D

SO-8

SO-8

Pin 1

S1

Absolute Maximum Ratings T

G2

S2

G

G1

S

S

S

= 25°C unless otherwise noted

A

Features

• Q1: N-Channel

4.5 A, 60 V R
R

• Q2: P-Channel
–3.5 A, –60 V R

R

•

Qualified to AEC Q101

•

RoHS Compliant

Q2

5
6

Q1

7
8

= 55 mΩ @ V

DS(on)

= 75 mΩ

DS(on)

= 105 mΩ @ V

DS(on)

= 135 mΩ

DS(on)

@ V

@ V

4
3
2
1

GS

GS

GS

GS

= 10V
= 4.5V

= –10V

= –4.5V

®

Symbol Parameter Q1 Q2 Units

V

Drain-Source Voltage 60 –60 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current - Continuous (Note 1a) 4.5 –3.5 A

- Pulsed 20 –20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6

TJ, T

STG

Operating and Storage Junction Tem perature Range -55 to +150

(Note 1b)
(Note 1c) 2

±20 ±20

1.2

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 40

°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4559

2008 Fairchild Semiconductor Corporation

FDS4559_ F085

13” 12mm 2500

units

FDS4559_F085 Rev A (W)

FDS4559_F085 60V Complementary PowerTrench MOSFET

Electrical Characteristics T

Symbol

Parameter Test Conditions Type Min

= 25°C unless otherwise noted

A

Drain-Source Avalanche Ratings (Note 1)

W

Single Pulse Drain-Source

DSS

VDD = 30 V, ID = 4.5 A Q1 90 mJ

Avalanche Energy

IAR Maximum Drain-Source

Q1 4.5 A

Avalanche Current

Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

∆BVDSS
∆T

I

Zero Gate Voltage Drain

DSS

Breakdown Voltage
Temperature Coefficient

J

Current

I

Gate-Body Leakage VGS = +20 V, VDS = 0 V

GSS

VGS = 0 V, ID = 250 µA
V

= 0 V, ID = –250 µA

GS

I

= 250 µA, Referenced to 25°C

D

= –250 µA, Referenced to 25°C

I

D

VDS = 48 V, VGS = 0 V
V

= –48 V, VGS = 0 V

DS

V

= +20 V, VDS = 0 V

GS

On Characteristics (Note 2)

V

Gate Threshold Volt age VDS = VGS, ID = 250 µA

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain-Source

On-Resistance

V

= VGS, ID = –250 µA

DS

I

= 250 µA, Referenced to 25°C

D

= –250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 4.5 A

= 10 V, ID = 4.5 A, TJ = 125°C

V

GS

V

= 4.5 V, ID = 4 A

GS

VGS = –10 V, ID = –3.5 A

= –10 V, ID = –3.5 A, TJ = 125°C

V

GS

V

= –4.5 V, ID = –3.1 A

I

On-State Drain Current VGS = 10 V, VDS = 5 V

D(on)

GS

V

= –10 V, VDS = –5 V

GS

gFS Forward Transconductance VDS = 10 V, ID = 4.5 A

V

= –5 V, ID = –3 5 A

DS

Dynamic Characteristics

C

Input Capacitance Q1

iss

C

Output Capacitance Q1

oss

C

Reverse Transfer

rss

Capacitance

Q1
V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz
Q2
V

= –30 V, VGS = 0 V,

DS

f = 1.0 MHz

Switching Characteristics (Note 2)

t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time
t

Turn-Off Delay Time

d(off)

tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge

Q1
V

= 30 V, ID = 1 A,

DD

V

GS

= 10V, R

GEN

= 6 Ω

Q2
V

= –30 V, ID = –1 A,

DD

= –10 V, R

V

GS

GEN

= 6 Ω

Q1
V

= 30 V, ID = 4.5 A, VGS = 10 V

DS

Q2
V

= –30 V, ID = –3.5 A, VGS = –10V

DS

Typ Max Units

Q1

60

Q2

–60
Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2 1 –1
Q1
Q2

Q1 42

Q2

Q1

20

Q2

–20
Q1
Q2

Q2
Q2

Q1
Q2

Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2

V

58

–49

+

+

2.2

–1.6 3 –3

–5.5 4

72
55

82
130
105

A

14 9 S

650

759

80

90

35

39

11 7 20
8

10

19

19

6

12

12.5
15

2.4

2.5

2.6

3.0

mV/°C

1

µA

–1
100

nA

100

V

mV/°C

55

mΩ
94
75

105
190
135

pF
pF
pF

ns
14
18
20
35
34
15
22
18
21

ns

ns

ns

nC
nC
nC

®

FDS4559_F085 Rev A (W)

Electrical Characteristics (continued) T

Symbol

Parameter

Test Conditions

= 25°C unless otherwise noted

A

Type Min Typ Max Units

Drain-Source Diode Characteristics and Maximum Ratings

I

Maximum Continuous Drain-Source Diode Forward Current Q1

S

1.3

Q2

VSD Drain-Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

a) 78°C/W when

mounted on a

0.5 in2 pad of 2 oz
copper

VGS = 0 V, IS = 1.3 A (Note 2)
VGS = 0 V, IS = –1.3 A (Note 2)

is determined by the user's board design.

θCA

b) 125°C/W when

mounted on a .02 in2
pad of 2 oz copper

Q1
Q2

0.8
–0.8

c) 135°C/W when mounted on a

minimum pad.

FDS4559_F085 60V Complementary PowerTrench MOSFET

–1.3 A

1.2

–1.2 V

®

FDS4559_F085 Rev A (W)

Typical Characteristics: Q2

FDS4559_F085 60V Complementary PowerTrench MOSFET

15

VGS = -10V

-6.0V

12

-5.0V

9

6

, DRAIN CURRENT (A)

D

-I

3

0

012345

-V

DS

-4.5V

-4.0V

-3.5V

-3.0V

-2.5V

, DRAIN-SOURCE VO LTAGE (V)

1.8

VGS = -3.5V

-4.0V

-4.5V

-5.0V

-6.0V

-7.0V

1

0246810

-I

, DRAIN CURRENT (A)

D

, NORMALIZED

DS(ON)

R

1.6

1.4

1.2

DRAIN-SOURCE ON-RESISTANCE

0.8

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

ID = -3.5A

1.8
V

= -10V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TE MP E RATURE (oC)

J

0.4

0.3

0.2

, ON-RESISTANCE (OHM)

0.1

DS(ON)

R

TA = 25oC

0

246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-8.0V

ID = -1.5A

-10V

®

Figure 3. On-Resistance Variation with

Temperature.

15

VDS = -5V

12

9

6

, DRAIN CURRENT (A)

D

-I

3

0

12345

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-V

BODY DIODE FOR WARD V O LTAGE (V)

SD,

-55oC

with Source Current and Temperature.

FDS4559_F085 Rev A (W)

Typical Characteristics: Q2

FDS4559_F085 60V Complementary PowerTrench MOSFET

10

ID = -3.0A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0481216

Q

, GATE CHARGE (nC)

g

VDS = 10V

20V

30V

1200

1000

800

600

400

CAPACITANCE (pF)

200

0

0 102030405060

C

C

OSS

RSS

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

C

ISS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

10ms

1

VGS = -10V

SINGLE PULSE

, DRAIN CURRENT (A)

D

0.1

I

= 135oC/W

R

θJA

T

= 25oC

A

0.01

0.1 1 10 100

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1s

10s

DC

100µs

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

SINGLE PULSE
R

θ

JA

T

f = 1 MHz
V

= 0 V

GS

= 135°C/W

= 25°C

A

®

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

FDS4559_F085 Rev A (W)

Typical Characteristics: Q1

FDS4559_F085 60V Complementary PowerTrench MOSFET

20

VGS = 10V

6.0V

16

5.0V

12

8

4

, DRAIN-SOURCE CURRENT (A)

D

I

0

01234

4.5V

4.0V

V

, DRAIN-SOURCE VOL TAGE ( V )

DS

3.5V

1.8

1.6
VGS = 4.0V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

0 4 8 12 16 20

4.5V

5.0V

6.0V

I

, DRAIN CURRENT (A)

D

8.0V
10V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

2.2
ID = 4.5A

2

V

= 10V

GS

1.8

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.14

0.12

0.1

0.08

0.06

, ON-RESISTANCE (OHM)

0.04

DS(ON)

R

0.02

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

ID = 2.3A

®

Figure 13. On-Resistance Variation with

Temperature.

20

VDS = 5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

123456

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

-55oC

FDS4559_F085 Rev A (W)

Typical Characteristics: Q1

FDS4559_F085 60V Complementary PowerTrench MOSFET

10

ID = 4.5A VDS = 10V

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

02468101214

Q

, GATE CHARGE (nC)

g

30V

20V

900
800
700
600
500
400
300

CAPACITANCE (pF)

200
100

0

0 102030405060

C

ISS

C

OSS

C

RSS

, DRAIN TO SOURCE VOL TAG E (V)

V

DS

V

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

10ms

1

VGS= 10V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

D

R

I

0.01

= 135oC/W

θ

JA

= 25oC

T

A

0.1 1 10 100

, DRAIN-SO UR CE V O LTAGE (V)

V

DS

100ms

1s

DC

100µs

1m

40

30

20

POWER (W)

10

0

0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

= 135oC/W

R

θ

JA

T

A

f = 1MHz

= 0 V

GS

= 25oC

®

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

, TIME (sec)

t

1

P(pk)

T

Duty Cycle, D = t

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

R

(t) = r(t) + R

θJA

R

= 135°C/W

θJA

t

1

t

2

- TA = P * R

J

FDS4559_F085 Rev A (W)

θJA

(t)

JA

θ

/ t

1

2

tm

®

tm

tm

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FDS4559_F085 60V Complementary PowerTrench MOSFET

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www.fairchildsemi.com, under Sales Support

.

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I37

FDS4559_F085 Rev A (W)

®