Datasheet FDS4480 Datasheet (Fairchild)

February 2002

G

FDS4480

40V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R

and fast switching speed.

DS(ON)

Applications

• DC/DC converter

D

SO-8

Pin 1

SO-8

S

Absolute Maximum Ratings T

G

S

o

=25

A

C unless otherwise noted

Features

• 10.8 A, 40 V. R

• Low gate charge (29 nC)

• High performance trench technology for extremely

low R

• High power and current handling capability

DS(ON)

5 6 7 8

= 12 mΩ @ VGS = 10 V

DS(ON)

4 3 2 1

Symbol Parameter Ratings Units

V

Drain-Source Voltage 40 V

DSS

V

Gate-Source Voltage +30/–20 V

GSS

ID Drain Current – Continuous (Note 1a) 10.8 A – Pulsed 45 PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) (Note 1c)

Operating and Storage Junction Temperature Range –55 to +175 °C

1.4

1.2

W

Thermal Characteristics

R

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W

θJA

R

Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W

θJA

R

Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

θJC

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2002 Fairchild Semiconductor Corporation

FDS4480 FDS4480 13’’ 12mm 2500 units

FDS4480 Rev D (W)

FDS4480

Electrical Characteristics T

Symbol Drain-Source Avalanche Ratings (Note 2)

Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

A

EAS Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=10.8A 240 mJ IAS Drain-Source Avalanche Current 10.8 A

Off Characteristics

BV

Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 40 V

DSS

∆BVDSS ∆TJ

I

Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C

42

mV/°C

Gate–Body Leakage, Forward VGS = 30 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3.9 5 V

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

I

D(on)

Gate Threshold Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C

Static Drain–Source On–Resistance VGS = 10 V, ID = 10.8 A

VGS = 10 V,ID = 10.8 A, TJ=125°C

On–State Drain Current VGS = 10 V, VDS = 5 V 22 A

–8

8

13

12 21

mV/°C

mΩ

gFS Forward Transconductance VDS = 10 V, ID = 10.8 A 36 S

Dynamic Characteristics

C

Input Capacitance 1686 pF

iss

C

Output Capacitance 384 pF

oss

C

Reverse Transfer Capacitance

rss

VDS = 20 V, V f = 1.0 MHz

= 0 V,

GS

185 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 12 22 ns

d(on)

tr Turn–On Rise Time 9 18 ns t

Turn–Off Delay Time 30 48 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 29 41 nC Qgs Gate–Source Charge 17 nC Qgd Gate–Drain Charge

VDD = 20 V, ID = 1 A, VGS = 10 V, R

GEN

= 6 Ω

VDS = 20 V, ID = 10.8 A, VGS = 10 V

15 27 ns

4 nC

FDS4480 Rev D (W)

FDS4480

Electrical Characteristics T

Symbol Drain–Source Diode Characteristics and Maximum Ratings

Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

A

IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A VSD

Drain–Source Diode Forward Voltage

VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V

trr Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/µs 27 nS Qrr Diode Reverse Recovery Charge 58 nC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

a) 50°C/W when

mounted on a 1in2 pad of 2 oz copper

is determined by the user's board design.

θCA

b) 105°C/W when

mounted on a .04 in2 pad of 2 oz copper

c) 125°C/W when mounted

on a minimum pad.

FDS4480 Rev D (W)

I

D

, DRAIN CURRENT (A)

6.0V

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

7.0V

8.0V

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

, DRAIN CURRENT (A)

I

S

, REVERSE DRAIN CURRENT (A)

FDS4480

Typical Characteristics

80

VGS = 10V

70

60

50

40

30

20

10

0

0 1 2 3 4

VDS, DRAIN TO SOURCE VOLTAGE (V)

5.5V

5.0V

4.5V

2

VGS = 5.0V

1.8

1.6

1.4

1.2

R

1

0.8 0 20 40 60 80

5.5V

6.0V

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

ID = 10.8A

1.8 VGS = 10V

1.6

1.4

1.2

1

R

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

0.025

0.022

0.019

0.016

0.013

0.01

TA = 25oC

0.007 4 5 6 7 8 9 10

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

10V

ID = 5.4A

Figure 3. On-Resistance Variation

withTemperature.

80

VDS = 5V

60

40

20

0

2 3 4 5 6

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

TA = -55oC

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

with Source Current and Temperature.

FDS4480 Rev D (W)

V

, GATE-SOURCE VOLTAGE (V)

CAPACITANCE (pF)

I

D

, DRAIN CURRENT (A)

100µs

P(pk), PEAK TRANSIENT POWER (W)

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

P(pk)

FDS4480

Typical Characteristics

10

ID = 10.8A VDS = 10V

8

6

4

2

GS

0

0 5 10 15 20 25 30 35

Qg, GATE CHARGE (nC)

20V

30V

2400

2000

C

1600

1200

800

400

C

OSS

C

RSS

0

0 10 20 30 40

ISS

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

1s

100ms

10ms

1ms

R

LIMIT

DS(ON)

10

1

VGS = 10V

SINGLE PULSE

0.1 R

= 125oC/W

θ

JA

TA = 25oC

0.01

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

DC

50

40

30

20

10

0

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

SINGLE PULSE R

= 125°C/W

θJA

TA = 25°C

f = 1 MHz VGS = 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

R

(t) = r(t) * R

0.1

0.01

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

θJA

R

θ

JA

TJ - TA = P * R

Duty Cycle, D = t1 / t

= 125oC/W

t

1

t

2

θJA

(t)

2

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS4480 Rev D (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™

STAR*POWER is used under license

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™



OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4