Page 1
FDS4465_F085
P-Channel 1.8V Specified PowerTrench
MOSFET
February 2010
FDS4
465_F085 P-Channel 1.8V Specified PowerTrench
tm
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings
G
G
S
S
S
S
S
TA=25oC unless otherwise noted
Features
• –13.5 A, –20 V. R
R
R
• Fast switching speed
• High performance trench technology for extremely
DS(ON)
5
6
7
8
low R
• High current and power handling capability
Qualified to AEC Q101
•
•
RoHS Compliant
= 8.5 mΩ @ V
DS(ON)
= 10.5 mΩ @ V
DS(ON)
= 14 mΩ @ V
DS(ON)
4
3
2
1
= –4.5 V
GS
= –2.5 V
GS
= –1.8 V
GS
®
MOSFET
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed –50
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +175
(Note 1a)
–13.5 A
(Note 1a)
2.5
(Note 1b)
(Note 1c)
±8
1.5
1.2
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4465 FDS4465_F085 13’’ 12mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDS
4465_F085 Rev. A
°C/W
°C/W
°C/W
www.fairchildsemi.com1
Page 2
FDS4
Electrical Characteristics
TA = 25°C unless otherwise noted
465_F085 P-Channel 1.8V Specified PowerTrench
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
Breakdown Voltage Temperature
DSS
∆T
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
∆V
∆T
R
DS(on)
Coefficient
J
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
D(on)
VGS = 0 V, I
I
= –250 µA, Referenced to 25°C
D
VDS = VGS, I
I
= –250 µA, Referenced to 25°C
D
= –250 µA
D
= –250 µA
D
VGS = –4.5 V, ID = –13.5 A
VGS = –2.5 V, ID = –12 A
= –1.8 V, ID = –10.5 A
V
GS
V
=–4.5 V, ID =–13.5A, T
GS
=125°C
J
gFS Forward Transconductance VDS = –5 V, ID = –13.5 A 70 S
–20 V
–12
mV/°C
µA
–0.4 –0.6 –1.5 V
3
6.7
8.0
9.8
9.0
8.5
10.5
14
13
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 8237 pF
iss
C
Output Capacitance 1497 pF
oss
C
Reverse Transfer Capacitance
rss
(Note 2)
Switching Characteristics
t
Turn–On Delay Time 20 36 ns
d(on)
tr Turn–On Rise Time 24 38 ns
t
Turn–Off Delay Time 300 480 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 86 120 nC
Qgs Gate–Source Charge 20 nC
Qgd Gate–Drain Charge
= –10 V, V
V
DS
= 0 V,
GS
f = 1.0 MHz
VDD = –10V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –13.5 A,
V
= –4.5 V
GS
750 pF
140 224 ns
11 nC
MOSFET
®
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
4465_F085 Rev. A www.fairchildsemi.com2
FDS
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper
θCA
VGS = 0 V, IS = –2.1 A
is determined by the user's board design.
b) 105 °C/W when
mounted on a .04 in2
pad of 2 oz copper
(Note 2)
–0.6 –1.2 V
c) 125 °C/W when mounted on a
mini mum p ad.
Page 3
FDS4
Typical Characteristics
50
VGS = -4.5V
40
-2.5V
30
20
, DRAIN CURRENT (A)
D
-I
10
0
00.511.5
-2.0V
-1.8V
, DRAIN TO SOURCE VOLTAGE (V)
-V
DS
-1.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
1.6
ID = -13.5A
= -10V
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESI STANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
T
, JUNCTION TEM PERATURE (oC)
J
3
2.6
2.2
VGS = -1.5V
1.8
, NORMALIZED
1.4
DS(ON)
R
1
DRAIN-SOURCE ON-RESI STANCE
0.6
0 1020304050
-1.8V
-2.0V
-I
, DRAIN CURRENT (A)
D
Drain Current and Gate Voltage.
0.025
0.02
0.015
TA = 125oC
0.01
, ON-RESISTANCE (O HM)
0.005
DS(ON)
R
0
012345
TA = 25oC
, GATE TO SOURCE VOLTAGE (V)
-V
GS
465_F085 P-Channel 1.8V Specified PowerTrench
-2.5V
-4.5V
ID = -6.3A
®
MOSFET
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5.0V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
00.511.52
-V
TA = 125oC
-55oC
, GATE TO SOURCE VOLTAGE (V)
GS
25oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
4465_F085 Rev. A www.fairchildsemi.com3
FDS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
00.20.40.60.811.2
-V
25oC
-55oC
BODY DIODE FOR WARD VOLTAGE (V)
SD,
with Source Current and Temperature.
Page 4
)
FDS4
Typical Characteristics
5
ID = -13.5A
4
3
2
1
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
0 20406080100
, GATE CHARGE (nC)
Q
g
VDS = -5V
-10V
-15V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
VGS = -4.5V
SINGLE PULSE
, DRAIN CURRENT (A)
D
0.1
-I
0.01
= 125oC/W
R
θ
JA
= 25oC
T
A
0.1 1 10 100
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
100ms
1s
10s
DC
10ms
1ms
100µs
10000
8000
6000
4000
CAPACITANCE (pF)
2000
0
0 5 10 15 20
50
40
30
20
10
P(pk), PEAK TRANSIE NT POWER (W)
0
0.001 0.01 0. 1 1 10 100
C
ISS
C
OSS
C
RSS
, DRAIN TO SOURCE VOLTAGE (V)
-V
DS
, TIME (sec)
t
1
f = 1 MHz
= 0 V
V
GS
SINGLE PULSE
R
= 125°C/W
θ
JA
= 25°C
T
A
465_F085 P-Channel 1.8V Specified PowerTrench
®
MOSFET
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.1
0.05
0.02
0.01
SINGLE PULSE
0.0001 0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4465_F085 Rev. A www.fairchildsemi.com4
FDS
R
(t) = r(t) + R
θJA
R
= 125oC/W
θ
JA
P(pk
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
θJA
(t)
θ
JA
/ t
1
2
Page 5
tm
®
tm
tm
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intended to be an exhaustive list of all such trademarks.
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Auto-SPM™
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CTL™
Current Transfer Logic™
DEUXPEED
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®
®
®
®
®
®
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®
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
®
FRFET
Global Power Resource
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®
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2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
®
®
®
FDS4
465_F085 P-Channel 1.8V Specified PowerTrench
®
MOSFET
ANTI-COUNTERFEITING POLICY
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www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semico nductor products are experienci ng counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts e xperien ce man y prob lems such as loss of brand reput ation, substanda rd performa nce, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairch ild strongly encourage s custome rs to purchase Fairch ild parts either dire ctly from Fa irchild or from Autho rized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
4465_F085 Rev. A www.fairchildsemi.com5
FDS
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary dat a will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time withou t
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
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