Datasheet FDS4465 Datasheet (Fairchild Semiconductor)

March 2003

FDS4465

P-Channel 1.8V Specified PowerTrench



MOSFET

FDS4465

General Description

This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized f or power
management applications with a wide range of gate
drive voltage (1.8V – 8V).

Features

• –13.5 A, –20 V. R
R
R

• Fast switching speed

DS(ON)
DS(ON)
DS(ON)

= 8.5 mΩ @ VGS = –4.5 V
= 10.5 mΩ @ VGS = –2.5 V
= 14 mΩ @ VGS = –1.8 V

Applications

• Power management

• Load switch

• Battery protection

D

D

D

D

D

D

D

D

SO-8

Pin 1

SO-8

S

S

Absolute Maximum Ratings

G

G

S

S

S

S

TA=25oC unless otherwise noted

• High performance trench technology for extremely

DS(ON)

5
6
7
8

4
3
2
1

low R

• High current and power handling capability

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous
– Pulsed –50
PD

TJ, T

STG

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range –55 to +175

(Note 1a)

–13.5 A

(Note 1a)

2.5

(Note 1b)
(Note 1c)

±8

1.5

1.2

V

W

°C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1c)

(Note 1)

50

125

25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2003 Fairchild Semiconductor Corporation

FDS4465 FDS4465 13’’ 12mm 2500 units

°C/W
°C/W
°C/W

FDS4465 Rev C1 (W)

FDS4465

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BV
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

∆V

GS(th)

∆TJ
R

DS(on)

Breakdown Voltage Temperature

DSS

Coefficient

J

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Revers e VGS = –8 V, VDS = 0 V –100 nA

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A

D(on)

= 0 V, ID = –250 µA

V

GS

= –250 µA, Referenced to 25°C

I

D

= VGS, ID = –250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –13.5 A

= –2.5 V, ID = –12 A

V

GS

= –1.8 V, ID = –10.5 A

V

GS

=–4.5 V, ID =–13.5A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –13.5 A 70 S

–20 V

–12

mV/°C

µA

–0.4 –0.6 –1.5 V

3

6.7

8.0

9.8

9.0

8.5

10.5
14
13

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 8237 pF

iss

C

Output Capacitance 1497 pF

oss

C

Reverse Transfer Capacitance

rss

Switching Characteristics

t

Turn–On Delay Time 20 36 ns

d(on)

(Note 2)

tr Turn–On Rise Time 24 38 ns
t

Turn–Off Delay Time 300 480 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 86 120 nC
Qgs Gate–Source Charge 20 nC
Qgd Gate–Drain Charge

= –10 V, V

V

DS

GS

f = 1.0 MHz

= –10V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

= –10 V, ID = –13.5 A,

V

DS

V

= –4.5 V

GS

GEN

= 0 V,

750 pF

= 6 Ω

140 224 ns

11 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Drain–Source Diode Forward
Voltage

is guaranteed by design while R

θJC

a) 50 °C/W when

mounted on a 1in
pad of 2 oz copper

θCA

2

VGS = 0 V, IS = –2.1 A

is determined by the user's board design.

b) 105 °C/W when

mounted on a .04 in2
pad of 2 oz copper

(Note 2)

–0.6 –1.2 V

c) 125 °C/W when mounted on a

minimum pad.

FDS4465 Rev C1 (W)

Typical Characteristics

FDS4465

50

VGS = -4.5V

40

-2.5V

30

20

, DRAIN CURRENT (A)

D

-I

10

0

00.511.5

-2.0V

-1.8V

-V

, DRAIN TO SOURCE V O LTAGE (V)

DS

-1.5V

3

2.6

2.2
VGS = -1.5V

1.8

, NORMALIZED

1.4

DS(ON)

R

1

DRAIN-SOURCE ON-RESI S TANCE

0.6

0 1020304050

-1.8V

-2.0V

-I

, DRAIN CURRENT (A)

D

-2.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = -13.5A

= -10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESI S TANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.025

0.02

0.015
TA = 125oC

0.01

, ON-RESISTANCE (O HM)

0.005

DS(ON)

R

0

012345

TA = 25oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

ID = -6.3A

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = -5.0V

40

30

20

, DRAIN CURRENT (A)

D

-I

10

0

00.511.52

-V

TA = 125oC

-55oC

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

TA = 125oC

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001

00.20.40.60.811.2

-V

25oC

-55oC

BODY DIODE FORWARD VOLTAGE (V)

SD,

with Source Current and Temperature.

FDS4465 Rev C1 (W)

)

Typical Characteristics

FDS4465

5

ID = -13.5A

4

3

2

1

, GATE-SOURCE VOLTAGE ( V )

GS

-V

0

0 20406080100

Q

, GATE CHARGE (nC)

g

VDS = -5V

-10V

-15V

10000

8000

6000

4000

CAPACITANCE (pF)

2000

0

0 5 10 15 20

C

ISS

C

OSS

C

RSS

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

VGS = -4.5V

SINGLE PULSE

, DRAIN CURRENT (A)

D

0.1

-I

R

= 125oC/W

θ

JA

T

= 25oC

A

0.01

0.1 1 10 100

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1s

10s

DC

10ms

1ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIE NT P O WE R (W )

0

0.001 0.01 0.1 1 10 100

t

, TIME (sec)

1

SINGLE PULSE
R

θ

JA

T

f = 1 MHz
V

= 0 V

GS

= 125°C/W

= 25°C

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.1

0.05

0.02

0.01

SINGLE PULSE

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

R

θJA

R

θ

P(pk

T

- TA = P * R

J

Duty Cycle, D = t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

(t) = r(t) + R

= 125oC/W

JA

t

1

t

2

θJA

(t)

θ

JA

/ t

1

2

FDS4465 Rev C1 (W)

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As used herein:

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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2