Datasheet fds4435bz_f085 Datasheet

Download

Page 1

FDS4435BZ_F085

P-Channel PowerTrench® MOSFET

-30V, -8.8A, 20m:

Features

 Max r

 Extended V

 HBM ESD protection level of ±3.8KV typical (note 3)

 High performance trench technology for extremely low r

 High power and current handling capability

 Termination is Lead-free and RoHS compliant

 Qualified to AEC Q101

= 20m: at VGS = -10V, ID = -8.8A

DS(on)

= 35m: at VGS = -4.5V, ID = -6.7A

DS(on)

range (-25V) for battery applications

GSS

DS(on)

July 2009

General Description

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load

switching applications common in Notebook Computers and

Portable Battery Packs.

process that has

FDS4435BZ_F085 P-Channel PowerTrench

MOSFET

Pin 1

SO-8

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous TA= 25°C (Note 1a) -8.8

-Pulsed -50

Power Dissipation TA = 25°C (Note 1a) 2.5

Power Dissipation T

Single Pulse Avalanche Energy (Note 4) 24 mJ

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

= 25°C (Note 1b) 1.0

Thermal Characteristics

TJC

TJA

Thermal Resistance, Junction to Case 25

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDS4435BZ FDS4435BZ

_F085 Rev.A

_F085 SO-8 13’’

12mm 2500units

www.fairchildsemi.com

Page 2

FDS4435BZ_F085 P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V

Breakdown Voltage Temperature Coefficient

= -250PA, referenced to 25°C -21 mV/°C

Zero Gate Voltage Drain Current VDS = -24V, VGS= 0V 1 PA

Gate to Source Leakage Current VGS = ±25V, VDS= 0V ±10 PA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -1 -2.1 -3 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= -250PA, referenced to 25°C 6 mV/°C

= -10V, ID = -8.8A 16 20

= -4.5V, ID = -6.7A 26 35

= -10V, ID = -8.8A, TJ = 125°C 22 28

Forward Transconductance VDS = -5V, ID = -8.8A 24 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 275 365 pF

Reverse Transfer Capacitance 230 345 pF

= -15V, VGS = 0V,

f = 1MHz

1385 1845 pF

Gate Resistance f = 1MHz 4.5 :

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 612ns

Turn-Off Delay Time 30 48 ns

= -15V, ID = -8.8A,

= -10V, R

GEN

= 6:

Fall Time 12 22 ns

Total Gate Charge VGS= 0V to -10V

Total Gate Charge VGS= 0V to -5V 16 23 nC

Gate to Source Charge 5.2 nC

VDD = -15V,

= -8.8A

Gate to Drain “Miller” Charge 7.4 nC

10 20 ns

28 40 nC

m:V

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. Starting T

Source to Drain Diode Forward Voltage VGS= 0V, IS= -8.8A (Note 2) -0.9 -1.2 V

Reverse Recovery Time

Reverse Recovery Charge 23 35 nC

is determined with the device moun ted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 50°C/W when mounted on

pad of 2 oz copper.

a 1 in

= 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V

_F085 Rev.A

= -8.8A, di/dt = 100A/Ps

29 44 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

www.fairchildsemi.com

Page 3

FDS4435BZ_F085 P-Channel PowerTrench

Typical Characteristics T

, DRAIN CURRENT (A)

-I

01234

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.6

1.4

On-Region Characteristics Figure 2.

ID = -8.8A V

= -10V

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

VGS = -10V VGS = -5V

= 25°C unless otherwise noted

VGS = -4.5V

VGS = -4V

VGS = -3.5V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

4.0

3.5

3.0

2.5

VGS = -3.5V

VGS = -4V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

VGS = -4.5V

VGS = -5V

2.0

NORMALIZED

1.5

VGS = -10V

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 1020304050

-ID, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

ID= -8.8A

(m:)

, DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

-VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

VDS= -5V

, DRAIN CURRENT (A)

-I

12345

TJ= 25oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

_F085 Rev.A

TJ= 150oC

TJ =-55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

VGS= 0V

0.1

TJ= 150oC

0.01

0.001

, REVERSE DRAIN CURRENT (A)

-I

0.0001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDS4435BZ_F085 P-Channel PowerTrench

Typical Characteristics T

ID = -8.8A

= -10V

VDD = -15V

, GATE TO SOURCE VOLTAGE(V)

-V

0 5 10 15 20 25 30

Figure 7.

, AVALANCHE CURRENT(A)

-I

0.01 0.1 1 10

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

TJ= 125oC

tAV, TIME IN AVALANCHE(ms)

= 25°C unless otherwise noted

VDD = -20V

TJ= 25oC

4000

iss

1000

oss

CAPACITANCE (pF)

f = 1MHz

= 0V

100

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

C a p a c i t a n c e v s D r a i n

to Source Voltage

-4

VDS= 0V

-5

-6

-7

-8

, GATE LEAKAGE CURRENT(A)

-I

-9

0 5 10 15 20 25 30

-V

TJ= 125oC

TJ = 25oC

, GATE TO SOURCE VOLTAGE(V)

MOSFET

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

, DRAIN CURRENT (A)

-I

TJA

25 50 75 100 125 150

VGS= -4.5V

= 50oC/W

TA, AMBIENT TEMPERATURE (oC)

F i g u r e 1 1 . M a x i m u m C o n t i n u o u s D r a i n

Current vs Ambient Temperature

_F085 Rev.A

VGS= -10V

Figure 10.

Gate Leakage Current vs Gate to

Source Voltage

100

THIS AREA IS

LIMITED BY r

, DRAIN CURRENT (A)

0.1

-I

0.01

0.1 1 10

Figure 12.

DS(on)

SINGLE PULSE T

= MAX RATED

TJA

=25oC

-VDS, DRAIN to SOURCE VOLTAGE (V)

F or w ar d Bi a s S a fe

Operating Area

= 125oC/W

100us

1ms

10ms

100ms

10s DC

www.fairchildsemi.com

Page 5

FDS4435BZ_F085 P-Channel PowerTrench

Typical Characteristics T

1000

100

, PEAK TRANSIENT POWER (W)

(PK)

0.5

-4

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-3

Figure 13. Single Pulse Maximum Power Dissipation

= 25°C unless otherwise noted

-2

-1

t, PULSE WIDTH (s)

VGS = -10 V

110

SINGLE PULSE

= 125 oC/W

= 25 oC

100 1000

MOSFET

IMPEDANCE, Z

0.01

NORMALIZED THERMAL

0.001

-4

-3

SINGLE PULSE

= 125 oC/W

-2

t, RECTANGULAR PULSE DURATION (sec)

-1

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

110

1/t2

x R

+ T

TJA

100 1000

Figure 14. Transient Thermal Response Curve

_F085 Rev.A

www.fairchildsemi.com

Page 6

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* PSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDS4435BZ_F085 P-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

_F085 Rev.A

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

www.fairchildsemi.com

Rev. I40