Datasheet FDS4435A Datasheet (Fairchild Semiconductor)

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Page 1

FDS4435A

P-Channel Logic Level PowerTrenchTM MOSFET

FDS4435A

Septmeber 1999

General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

SO-8

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Features

 -9 A, -30 V. R

DS(ON)

= 0.0175 Ω @ V = 0.0250 Ω @ V

= -10 V

= -4.5 V

 Low gate charge (21nC typical).

 High performance trench technology for extremely

low R

DS(ON)

 High power and current handling capability.

6 7 8

3 2 1

Symbol Parameter Ratings Units

DSS

GSS

TJ, T

stg

Drain-Source Voltage -30 V Gate-Source Voltage Drain Current - Continuous (Note 1a) -9 A

- Pulsed -50

Power Dissipation for Single Operation (Note 1a) 2.5 W

(Note 1b) (Note 1c)

Operating and Storage Junct i on Temperature Range -55 to +150

± 20

1.2 1

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 Thermal Resistance, Junction-to-Cas e (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS4435A FDS4435A 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corporation

°C/W °C/W

FDS4435A Rev. C

Page 2

FDS4435A

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆BVDSS ∆T

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage Breakdown Volt age Temperature

Coefficient Zero Gate Voltage Drain Current

= 0 V, ID = -250 µA

= -250 µA,Referenced to 25°C

VDS = -24 V, VGS = 0 -1I

= 125°C

Gate-Body Leakage Current, For ward VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA

-30 V

-26

mV/°C

-10

µA

On Characteristics (Note 2)

GS(th)

∆VGS(th) ∆T

DS(on)

D(on)

Gate Threshold Voltage Gate Threshold Voltage

Temperatur e Coefficie nt

Static Drain-Source On-Resistance

= VGS, ID = -250 µA

= -250 µA,Referenced to 25°C

VGS = -10 V, ID = -9 A 0.015 0.0185

-1 -1.7 -3 V

4.2

TJ = 125°C 0.021 0.030

= -4.5 V, ID = -7 A 0.023 0.025

On-State Drain Current VGS = -10 V, VDS = -5 V -40 A Forward Transconductance VDS = -10 V, ID = -9 A 25 S

mV/°C

Ω

Dynamic Characteristics

iss

oss

rss

Input Capacitance 2010 pF Output Capacitance 590 pF Reverse Transfer Capacitance

= -15 V, VGS = 0 V

f = 1.0 MHz

260 pF

Switching Characteristics (Note 2)

d(on)

d(off)

Q Q Q

g gs gd

Turn-On Delay Time 12 22 ns Turn-On Rise Time 15 27 ns

= -15 V, ID = -1 A

= -10 V, R

GEN

= 6 Ω

Turn-Off Delay Time 100 140 ns Turn-Off Fall Tim e Total Gate Charge 21 30 nC Gate-Source Charge 6 nC

= -15 V, ID = -9 A

= -5 V,

Gate-Drain Char ge

55 80 ns

8nC

Drain-Source Diode Characteristics and Maximum Ratings

Notes: 1: R

θJA

drain pins. R

Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Cont i nuous Drain-Sou rce Diode Forward Current -2.1 A Drain-Sourc e Diode Forward Volta ge VGS = 0 V, IS = -2.1 A (Note 2) 0.75 -1.2 V Source-Drain Reverse Recovery Time

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 50° C/W when

mounted on a 1 in pad of 2 oz. copper.

is determined by the user's board design.

θJA

= -10 A, dlF/dt = 100 A/µS

b) 105° C/W when

mounted on a 0.04 in pad of 2 oz. copper.

36 80 ns

c) 125° C/W when

mounted on a 0.006 in pad of 2 oz. copper.

FDS4435A Rev. C

Page 3

Typical Characteristics

FDS4435A

VGS = -10V

-6.0V

-5.0V

-4.5V

-4.0V

, DRAIN CURRENT (A)

-I

012345

, DRAIN-SOURCE VOLTAGE (V)

-V

-3.5V

-3V

2.4

2.2 VGS = -3.5V

1.8

1.6

, NORMALIZED

1.4

DS(ON)

1.2

DRAIN-SOURCE ON-RESISTANCE

0.8

0 1020304050

-4.0V

-4.5V

-I

-5.0V

-6.0V

-7.0V

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage

1.6 ID = -8.8A

= -10V

1.4

1.2

, NORMALIZ E D

DS(ON)

0.8

DRAIN-SOURCE ON-RESIST ANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

0.07

0.06

0.05

0.04

0.03

, ON-RESISTANCE (OHM)

0.02

DS(ON)

0.01

246810

, GATE TO SOURCE VOLTAGE (V)

-V

TA = 125oC

TA = 25oC

-8.0V

-10V

ID = -4.4A

Figure 3. On-Resistance Variation

with Temperature

VDS = -5V

, DRAIN CURRENT (A)

-I

12345

, GATE TO SOURCE VOLTAGE (V)

-V

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage

100

VGS = 0V

0.1

0.01

0.001

, REVERSE DRAI N CURRENT (A)

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

-V

BODY DIODE FORWARD VOLTAGE (V)

SD,

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature

FDS4435A Rev. C

Page 4

Typical Characteristics (continued)

FDS4435A

ID = -8.8A

VDS = -5V

-15V

, GATE-SOURCE VOLTAGE (V)

-V

0 5 10 15 20 25 30 35

, GATE CHARGE (nC)

Figure 7. Gate-Charge Characteristics

100

LIMIT

DS(ON)

VGS = -10V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

-I

0.01

= 125oC/W

= 25oC

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

-V

10s

100µs

1ms

10ms

100ms

-10V

2500

2000

1500

ISS

f = 1 MHz

= 0 V

1000

CAPACITANCE (pF)

500

0 5 10 15 20 25 30

, DRAIN TO SOURCE VOLTAGE (V )

-V

OSS

RSS

Figure 8. Capacitance Characteristics

POWER (W)

0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC)

SINGLE PULSE

R =125°C/W

θJA

T = 25°C

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORM ALIZED EFF ECT I VE

0.002

TR ANSI ENT TH ER MAL RESISTANC E

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0. 1

0.05

0.02

0. 0 1 S i n g l e P u l s e

t , TI ME (s e c)

R (t) = r(t) * R

R = 125°C/ W

P(pk )

T - T = P * R (t)

D u t y C y c l e, D = t /t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.

FDS4435A Rev. C

Page 5

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE PT NUMBER PEEL STRENGTH MIN ______________gms

Customized Label

Packaging Option Packaging type

Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg)

Note/Comments

MAX _____________ gms

ESD Label

SOIC (8lds) Packaging Information

Standard

(no flow code)

TNR

2,500 95 4,000

13" Dia

343x64x343 530x130x83 343x64x343

5,000 30,000 8,000

0.0774 0.0774 0.0774 0.0774

0.6060 - 0.9696 0.1182

L86Z F011

Rail/Tube-TNR

13" Dia

Embossed Car rier Tape

Antistatic Cover Tape

Static Dissipative

F63TNR Label

D84Z TNR

500

7" Dia

184x18 7x47

1,000

NDS

9959

852

SOIC-8 Unit Orientation

343mm x 342mm x 64mm

Stand a r d In t e rm ed iate box

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 uni t s pe r 13" o r 33 0c m d ia met er reel . Th e reel s ar e dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm di ameter reel. This and some o ther options are further described in the Packaging Information table.

These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in di ff ere nt siz es depe nd in g on th e num be r of pa rts shippe d.

NDS

9959

NDS

9959

NDS

852

NDS 9959

852

Pin 1

F63TNR Label sample

LOT: CBVK741B019

FSID: FDS9953A

D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:

QTY: 2500

SPEC:

N/F: F (F63TNR)3

SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape 640mm minimum or 80 empty pockets

F63TNLab el

ESD Label

Components

ESD Label

F63TNLabel

Leader Tape 1680mm minimum or 210 empty pockets

July 1999, Rev. B

Page 6

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

SOIC

(12mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOIC(8lds) Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

(8lds)

6.50

5.30

12.0

1.55

1.60

1.75

10.25

+/-0.10

+/-0.3

+/-0.05

+/-0.10

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

5.50

min

+/-0.05

20 deg maximum

Sketch B (Top View)

Component Rotation

W1 Measured at Hub

8.0 +/-0.1

Typical component cavity center line

Typical component center line

Dim A

Max

4.0 +/-0.1

0.450

2.1 +/-0.10

0.5mm maximum

Sketch C (Top View)

Component lateral movement

+/-

0.150

9.2 +/-0.3

0.5mm maximum

0.06 +/-0.02

Dim A

max

Tape Size

12mm 7" Dia

12mm 13" Dia

 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim N

Diameter Option

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00 330

1.5

0.059

1.5

512 +0.020/-0.008 13 +0.5/-0.2

0.795

2.165550.488 +0.078/-0.000

20.2

0.795

7.00

20.2

178

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.724

18.4

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

July 1999, Rev. B

Page 7

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimen sions s hown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

September 1998, Rev. A

Page 8

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™ E2CMOS

FACT™ FACT Quiet Series™

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™

UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.