Page 1
■
■
■
■
■
±
° C
θ
°
θ
FDS4410A Single N-Channel, Logic-Level, PowerTrench
May 2005
FDS4410A
Single N - Channel, Logic-Level, PowerTrench
®
MOSFET
Features
10 A, 30 V. R
Fast switching speed
Low gate charge
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
Absolute Maximum Ratings
DS(ON)
R
DS(ON)
SO-8
= 13.5 m Ω @ V
= 20 m Ω @ V
D
D
D
Pin 1
GS
GS
D
= 10 V
= 4.5 V
S
S
T
=25°C unless otherwise noted
A
G
S
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
45
36
27
18
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
T
, T
J
STG
Thermal Characteristics
R
JA
R
JC
Drain–Source Voltage 30 V
Gate–Source Voltage
Drain Current – Continuous (Note 1a) 10 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.0
Operating and Storage Junction Temperature Range –55 to +150
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
(Note 1b) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
20 V
C/W
®
MOSFET
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4410A FDS4410A 13" 12mm 2500 units
©2005 Fairchild Semiconductor Corporation
FDS4410A Rev. B
1
www.fairchildsemi.com
Page 2
θ
θ
θ
∆
µ
±
∆
Ω
FDS4410A Single N-Channel, Logic-Level, PowerTrench
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
∆ T
I
DSS
I
GSS
On Characteristics (Note 2)
V
GS(th)
V
GS(th)
∆ T
R
DS(on)
I
D(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
JA
R
JC
Drain–Source Breakdown Voltage V
DSS
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current V
Gate–Body Leakage V
Gate Threshold Voltage V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source On–Resistance V
On–State Drain Current V
Forward Transconductance V
Input Capacitance V
= 0 V, I
GS
I
= 250 µA, Referenced to 25 ° C25mV/ ° C
D
= 24 V, V
DS
V
= 24 V, V
DS
= ± 20 V, V
GS
= V
DS
I
= 250 µA, Referenced to 25 ° C–5mV/ ° C
D
= 10 V, I
GS
V
= 4.5 V, I
GS
V
GS
= 10 V, V
GS
= 5 V, I
DS
= 15 V, V
DS
= 250 µA 30 V
D
= 0 V 1
GS
GS
= 10 V, I
= 0 V, T
GS
DS
, I
= 250 µA 1 1.9 3 V
D
= 10 A
D
= 9 A
D
= 10 A, T
D
= 5 V 50 A
DS
= 10 A 48 S
D
= 0 V, f = 1.0 MHz 1205 pF
GS
= 55°C 10
J
= 0 V
= 125 ° C
J
9.8
12.0
13.7
100 nA
13.5
20
23
m Ω
Output Capacitance 290 pF
Reverse Transfer Capacitance 115 pF
Gate Resistance V
Tu r n–On Delay Time V
Tu r n–On Rise Time 510ns
= 15 mV, f = 1.0 MHz 2.4
GS
R
DS
GEN
= 15 V, I
= 6 Ω
= 1 A, V
D
= 10 V,
GS
919ns
Tu r n–Off Delay Time 28 44 ns
Tu r n–Off Fall Time 919ns
Total Gate Charge V
= 15 V, I
DD
= 10 A, V
D
= 5 V 12 16 nC
GS
Gate–Source Charge 3.4 nC
Gate–Drain Charge 4.0 nC
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward Voltage V
Diode Reverse Recovery Time I
= 0 V, I
GS
= 10A, d
F
= 2.1 A (Note 2) 0.74 1.2 V
S
/d
= 100 A/µs 24 nS
iF
t
Diode Reverse Recovery Charge 27 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
is determined by the user's board design.
CA
A
®
MOSFET
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4410A Rev. B
a) 50°C/W when mounted on a
2
1 in
pad of 2 oz copper
b) 125°C/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
2
www.fairchildsemi.com
Page 3
Typical Characteristics
E
FDS4410A Single N-Channel, Logic-Level, PowerTrench
50
VGS=10V
40
6.0V
30
20
, DRAIN CURRENT (A)
D
I
10
0
00.511.5 2
V
4.0V
4.5V
,DRAIN-SOURCE VOLTAGE (V)
DS
3.5. V
3.0V
3
VGS=3.0V
2.5
2
, NORMALIZED
1.5
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANC
0.5
01020304050
3.5V
4.0V
I
, DRAIN CURRENT (A)
D
4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID=10A
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
=10V
V
GS
-50 -25 0 25 5075100125150175
T
,JUNCTION TEMPERATURE (°C)
J
0.05
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
TA=25oC
0.01
DS(ON)
R
0
246810
TA=125oC
,GATETOSOURCE VOLTAGE (V)
V
GS
6.0V
10V
ID=5A
®
MOSFET
Figure 3. On-Resistance Variation with
Temperature.
50
VDS=5V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
11.522.5 3 3.5 4
V
GS
TA=125oC
,GATETOSOURCE VOLTAGE (V)
25oC
-55oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS=0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
00.20.40.60.811.2
TA= 125oC
25oC
,BODYDIODEFORWARD VOLTAGE (V)
V
SD
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4410A Rev. B
3
www.fairchildsemi.com
Page 4
Typical Characteristics
)
)
FDS4410A Single N-Channel, Logic-Level, PowerTrench
10
ID=10A
8
6
4
, GATE-SOURCE VOLTAGE (V
2
GS
V
0
051015 20 25
,GATECHARGE (nC)
Q
g
VDS=10V
20V
15V
1600
1200
C
iss
800
C
CAPACITANCE (pF
400
C
rss
0
051015 20 25 30
oss
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
Figure7.Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
100µs
R
LIMIT
DS(ON)
10
1
VGS=10V
SINGLE PULSE
, DRAIN CURRENT (A)
0.1
D
I
θ
=125oC/W
R
JA
T
=25oC
A
0.01
0.01 0.1 1 10 100
,DRAIN-SOURCE VOLTAGE (V)
V
DS
10s
DC
1ms
10ms
100ms
1s
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 10 0
t
,TIME(sec)
1
f=1MHz
V
=0V
GS
SINGLE PULSE
=125°C/W
R
θ
JA
=25°C
T
A
®
MOSFET
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D=0.5
0.1
0.01
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.001
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) * R
θ
JA
R
θ
= 125°C/W
JA
P(pk)
t
1
t
2
- TA = P * R
T
J
Duty Cycle, D = t
θ
JA
θ
(t)
JA
1 /t2
0.0001 0.001 0 .01 0.1 1 1 0 100 1000
t1,TIM E(sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board desi gn.
FDS4410A Rev. B
4
www.fairchildsemi.com
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
FPS™
CoolFET™
CROSSVOL T™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FAST
FASTr™
LittleFET™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
I
C™
i-Lo™
ImpliedDisconnect™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
DISCLAIMER
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
UniFET™
VCX™
FDS4410A Single N-Channel, Logic-Level, PowerTrench
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
Formative or
In Design
First Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
®
MOSFET
No Identification Needed
Obsolete
FDS4410A Rev. B
Full Production
Not In Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
5
www.fairchildsemi.com
Rev. I15
Loading...