Page 1
April 1998
FDS4410
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description Features
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
10 A, 30 V. R
R
= 0.0135 Ω @ VGS = 10 V
DS(ON)
= 0.0200 Ω @ VGS = 4.5 V.
DS(ON)
Optimized for use in switching DC/DC converters
with PWM controllers.
Very fast switching .
Low gate charge (typical 22 nC).
SOT-23
SuperSOTTM-8
D
D
D
D
FDS
SO-8 SOT-223SuperSOTTM-6
5
6
SOIC-16
4
3
4410
G
7
S
1
SO-8
pin
S
8
S
Absolute Maximum Ratings T
Symbol Parameter FDS4410 Units
V
DSS
V
GSS
I
D
P
D
TJ,T
THERMAL CHARACTERISTICS
R
JA
θ
R
JC
θ
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 10 A
- Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
Operating and Storage Temperature Range -55 to 150 °C
STG
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
= 25oC unless other wise noted
A
2
1
© 1998 Fairchild Semiconductor Corporation
FDS4410 Rev.B1
Page 2
Electrical Characteristics (T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 21 mV /oC
/∆T
J
Zero Gate Voltage Drain Current VDS = 24 V, V
= 0 V 1 µA
GS
TJ = 55°C 10 µA
I
I
GSSF
GSSR
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 2)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2 3 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC -4.5 mV /oC
/∆T
J
Static Drain-Source On-Resistance VGS = 10 V, I D = 10 A 0.011 0.0135
TJ =125°C 0.018 0.023
VGS = 4.5 V, I D = 9 A 0.017 0.02
I
g
D(ON)
FS
On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, I D= 10 A 27 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 340 pF
f = 1.0 MHz
1340 pF
Reverse Transfer Capacitance 125 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDS= 15 V, I D= 1 A 12 22 ns
Turn - On Rise Time
VGS = 10 V , R
GEN
= 6 Ω
13 24 ns
Turn - Off Delay Time 38 60 ns
Turn - Off Fall Time 10 18 ns
Total Gate Charge VDS = 15 V, I D = 10 A, 22 31 nC
Gate-Source Charge VGS = 10 V 5 nC
Gate-Drain Charge 4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
guaranteed by design while R
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
is determined by the user's board design.
CA
θ
(Note 2) 0.73 1.2 V
Ω
is
JC
θ
a. 50OC/W on a 1 in2 pad
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
of 2oz copper.
b. 105OC/W on a 0.04 in
pad of 2oz copper.
2
c. 125OC/W on a 0.006 in2 pad
of 2oz copper.
FDS4410 Rev.B1
Page 3
Typical Electrical Characteristics
50
V =10V
6.0V
GS
5.0V
40
30
20
10
D
I , DRAIN-SOURCE CURRENT (A)
0
0 0.5 1 1.5 2 2.5 3
4.5V
4.0V
3.5V
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.8
I = 10 A
D
1.6
V = 10 V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
3
V = 3.5V
GS
2.5
2
, NORMALIZED
1.5
DS(on)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 10 20 30 40 50
4.0V
4.5V
5.0V
I , DRAIN CURRENT (A)
D
5.5V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
0.04
0.03
A
0.02
0.01
DS(ON)
R , ON-RESISTANCE (OHM)
0
2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = 125°C
T = 25°C
A
7.0V
10V
I = 5A
D
Figure 3. On-Resistance Variation with
Temperature.
50
DS
V = 5V
40
30
20
D
I , DRAIN CURRENT (A)
10
0
2 3 4 5
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5 . Transfer Characteristics.
T = -55°C
A
25°C
125°C
Figure 4 . On-Resistance Variation with
Gate-to-Source Voltage.
50
V = 0V
GS
10
1
T = 125°C
0.1
0.01
A
25°C
-55°C
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS4410 Rev.B1
Page 4
Typical Electrical And Thermal Characteristics
10
I = 10A
D
8
6
4
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 5 10 15 20 25
100
30
10
3
0.5
0.1
D
SINGLE PULSE
I , DRAIN CURRENT (A)
R =125°C/W
JA
θ
0.01
0.05 0.1 0.2 0.5 1 2 5 10 20 30 50
Q , GATE CHARGE (nC)
g
RDS(ON) LIMIT
V = 10V
GS
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 5V
DS
100ms
1s
10s
DC
15V
100us
1ms
10ms
10V
2000
C
1000
500
C
CAPACITANCE (pF)
200
f = 1 MHz
V = 0V
GS
100
0.1 0.5 1 2 5 10 30
V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.
30
25
20
15
POWER (W)
10
5
0
0.01 0.1 0.5 1 10 50 100 300
SINGLE PULSE TIME (SEC)
SINGLE PULSE
JA
R =125° C/W
θ
T = 25°C
A
iss
oss
rss
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
r(t), NORMALIZED EFFECTIVE
0.002
TRANSIENT THERMAL RESISTANCE
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
t , TIME (sec)
1
R (t) = r(t) * R
JA
θ
R = 125°C/W
JA
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
A
Duty Cycle, D = t /t
JA
θ
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
JA
θ
2
FDS4410 Rev.B1
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
2
E
CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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