Datasheet fds4141_f085 Datasheet

FDS4141_F085

P-Channel PowerTrench® MOSFET

-40V, -10.8A, 19.0mΩ

Features

 Typ r
 Typ r
 Typ Q
 High performance trench technology for extremely low

r

DS(on)

 RoHS Compliant
 Qualified to AEC Q101

= 10.5mΩ at V

DS(on)

= 14.8mΩ at V

DS(on)

= 35nC at VGS = -10V

g(TOT)

= -10V, ID = -10.5A

GS

= -4.5V, ID = -8.4A

GS

May 2009

Applications

 Control switch in synchronous & non-synchronous buck
 Load switch

 Inverter

FDS4141_F085 P-Channel PowerTrench

®

MOSFET

D

D

D

D

SO-8

Pin 1

©2009 Fairchild Semiconductor Corporation
FDS4141_F085 Rev. A

5

D

D

6

D

G

S

S

S

7

D

8

G

4

S

3

S

2

S

1

www.fairchildsemi.com1

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter Ratings Units

V
V

I
E

P
T

DSS
GS

D

AS
D
J

Drain to Source Voltage -40 V
Gate to Source Voltage ±20 V
Drain Current Continuous (V

= 10V) -10.8

GS

Pulsed -36
Single Pulse Avalanche Energy 229 mJ
Power Dissipation 1.6 W

, T

Operating and Storage Temperature -55 to +150

STG

Thermal Characteristics

FDS4141_F085 P-Channel PowerTrench

A

o

C

R

θJC

R

θJA

Thermal Resistance Junction to Case 30
Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area 81

o
o

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS4141 FDS4141_F085 SO-8 13” 12mm 2500 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 - - V
Zero Gate Voltage Drain Current VDS = -32V, - - -1 µA
Gate to Source Leakage Current VGS = ±20V, - - ±100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.7 -3.0 V

Drain to Source On Resistance

Forward Transconductance ID = -10.5A, V

= 25°C unless otherwise noted

A

= -10.5A, V

I

D

I

= -8.4A, V

D

= -10.5A, V

I

D

T

= 125oC

J

= -10V - 10.5 13.0

GS

= -4.5V - 14.8 19.0

GS

= -10V,

GS

= -5V 34 S

DD

- 15.3 19.0

C/W
C/W

mΩ

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Q

g(TOT)

Q

g(-5)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 355 - pF
Reverse Transfer Capacitance - 190 - pF

= -20V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz - 5.0 - Ω
Total Gate Charge at -10V VGS = 0 to -10V
Total Gate Charge at -5V VGS = 0 to -5V - 18.6 24.2 nC
Gate to Source Gate Charge - 5.2 - nC
Gate to Drain “Miller“ Charge - 6.6 - nC

FDS4141_F085 Rev. A www.fairchildsemi.com2

V

DD

I

= -10.5A

D

- 2005 - pF

-3545nC

= -20V

FDS4141_F085 P-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time
Turn-On Delay Time - 9.7 - ns
Rise Time - 4.4 - ns
Turn-Off Delay Time - 41 - ns
Fall Time - 11.6 - ns
Turn-Off Time - - 84 ns

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: Starting TJ = 25oC, L = 6.2mH, IAS = -8.6A

Source to Drain Diode Voltage
Reverse Recovery Time

Reverse Recovery Charge - 13.4 17.4 nC

= -20V, ID = -10.5A

V

DD

V

= -10V, R

GS

I

= -10.5A - -0.8 -1.3

SD

= -2.1A - -0.7 -1.2

I

SD

= -10.5A, dSD/dt = 100A/µs

I

F

GEN

= 6Ω

- - 25 ns

-2634ns

V

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDS4141_F085 Rev. A www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

Typical Characteristics

)

FDS4141_F085 P-Channel PowerTrench

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 1 00 125 150

TA, CASE TEMPERATURE

o

(

C

)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

JA

θ

IMPEDANCE, Z

NORMALIZED THERMAL

0.1

0.01

0.001

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

R

θ

JA

-3

10

= 81oC/W

Figure 3.

-2

10

Normalized Maximum Transient Thermal Impedance

-1

10

t, RECTANGULAR PULSE DURA TION (s

9

VGS = -10V

6

VGS = -4.5V

3

, DRAIN CURRENT (A)

D

-I

R

= 81oC/W

θ

JA

0

25 50 75 100 125 150

TA, CASE TEMPERATURE

o

(

C

)

Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature

P

DM

t

1

t

x R

2

2

+ T

θJA

A

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

11010210

MOSFET

3

®

1000

VGS = -10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS RE GION

100

10

, PEAK CURRENT (A)

DM

-I

SINGLE PULSE

R

1

-3

10

θ

JA

= 81oC/W

-2

10

-1

10

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDS4141_F085 Rev. A www.fairchildsemi.com4

TA = 25oC
FOR TEMPERATURES

o

ABOVE 25
CURRENT AS FOLLOWS:

I = I

2

5

C DERATE PEAK

150 - T

A

125

11010210

3

Typical Characteristics

FDS4141_F085 P-Channel PowerTrench

100

10

1

, DRAIN CURRENT (A)

D

0.1

-I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

T

J

T

= 25oC

A

0.01

0.01 0.1 1 10 100 300

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5.

36

27

Forward Bias Safe Operating Area

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

=

V

-5V

DD

18

TJ = 150oC

1ms

10ms

100ms
1s
DC

60

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R

≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

10

, AVALANCHE CURRENT (A)

AS

-I

1

0.01 0.1 1 10 100

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

Figure 6. Unclamped Inductive Switching

Capability

36

27

18

VGS = -10V

VGS = -4.5V
VGS = -4V
VGS = -3.5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = -3V

®

MOSFET

9

, DRAIN CURRENT (A)

D

-I
0

01234

TJ = 25oC

TJ = -55oC

-VGS, GA T E T O S O U R C E VO L T AGE (V)

Figure 7.

Transfer Characteristics Figure 8.

50

I

D

)

40

Ω

m

(

PULSE DURATION = 80µs

-

10.5A

=

DUTY CYCLE = 0.5% MAX

30

TJ = 150oC

20

, DRAIN TO SOURCE

ON-RESISTANCE

10

DS(on)

r

0

246810

TJ = 25oC

-VGS, GATE TO SOURC E V O L T AGE (V)

Figure 9.

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

, DRAIN CURRENT (A)

9

D

-I

0

0123

-VDS, DRAIN TO SOURCE VOLTA G E (V)

Saturation Characteristics

1.8

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESIS T A NCE

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE

ID = -10.5A

= -10V

V

GS

o

(

C

)

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDS4141_F085 Rev. A www.fairchildsemi.com5

Typical Characteristics

FDS4141_F085 P-Channel PowerTrench

1.4

1.2

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-75 -50 -25 0 25 50 75 100 125 150

Figure 11.

4000

1000

CAPACITANCE (pF)

100

0.1 1 10 60

V

=

V

GS

DS

I

=

-

250

µ

A

o

C

)

TJ, JUNCTION TEMPERATURE

D

(

Normalized Gate Threshold Voltage vs

Junction Temperature

C

iss

C

oss

f = 1MHz

= 0V

V

GS

-VDS, DRAIN TO SOURCE VOLTAGE (V

C

rss

)

1.10

ID =

-

1mA

1.05

1.00

0.95

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.90

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE

o

(

C

)

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10

ID = -10.5A

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

0

V

-

0 5 10 15 20 25 30 35 40

VDD = -20V

VDD = -25VVDD = -15V

Qg, GATE CHARGE (nC)

®

MOSFET

Figure 13.

Capacitance vs Drain to Source

Voltage

FDS4141_F085 Rev. A www.fairchildsemi.com6

Figure 14. Gate Charge vs Gate to Source Voltage

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FDS4141_F085 P-Channel PowerTrench

®

MOSFET

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Rev. I40

FDS4141_F085 Rev. A www.fairchildsemi.com7