Datasheet FDS4141 Datasheet (Fairchild)

FDS4141

P-Channel PowerTrench® MOSFET

-40V, -10.8A, 13.0mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  RoHS Compliant

= 13.0mΩ at VGS = -10V, ID = -10.5A

DS(on)

= 19.0mΩ at VGS = -4.5V, ID = -8.4A

DS(on)

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench deliver low superior performance benefit in the applications switching performance capability reducing power dissipation losses in converter/inverter applications

r

Applications

 Control switch in synchronous & non-synchronous buck  Load switch  Inverter

and optimized BV

DS(on)

November 2007

®

technology to

capability to offer

DSS

.

and optimized

FDS4141 P-Channel PowerTrench

®

MOSFET

D

SO-8

Pin 1

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage -40 V Gate to Source Voltage ±20 V Drain Current -Continuous -10.8

-Pulsed -36 Single Pulse Avalanche Energy (Note 3) 294 mJ Power Dissipation TA = 25°C (Note 1a) 5 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

S

A

G

S

= 25°C unless otherwise noted

= 25°C (Note 1b) 2.5

A

5

D

6

D

7

D

8

G

4

S

3

S

2

S

1

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 25 Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDS4141 FDS4141 SO-8 13’’ 12mm 2500units

1

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FDS4141 P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V Breakdown Voltage Temperature

Coefficient

ID = -250µA, referenced to 25°C -33 mV/°C

Zero Gate Voltage Drain Current VDS = -32V, -1 µA Gate to Source Leakage Current VGS = ±20V, V

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.6 -3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = -5V, ID = -10.5A 37 S

ID = -250µA, referenced to 25°C 5.3 mV/°C VGS = -10V, ID = -10.5A 11.0 13.0

VGS = -10V, ID = -10.5A, TJ= 125°C 16.8 19.9

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance Output Capacitance 355 475 pF Reverse Transfer Capacitance 190 285 pF

VDS = -20V, VGS = 0V, f = 1MHz

2005 2670 pF

Gate Resistance f = 1MHz 5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 5 10 ns Turn-Off Delay Time 42 68 ns

VDD = -20V, ID = -10.5A, VGS = -10V, R

GEN

= 6Ω

10 20 ns

Fall Time 12 22 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 6 nC

= 0V to -10V

GS

= 0V to -5V 19 27 nC

GS

VDD = -20V,

35 49 nC

ID = -10.5A

Gate to Drain “Miller” Charge 7 nC

mΩVGS = -4.5V, ID = -8.4A 15.2 19.0

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. UIL condition: Starting T

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 14 26 nC

= 25°C, L = 3mH, I

J

a) 50°C/W when mounted on a

2

1in

pad of 2 oz copper.

= -14A, VDD = -40V, VGS = -10V.

AS

V

= 0V, IS = -10.5A (Note 2) -0.8 -1.3

GS

V

= 0V, IS = -2.1A (Note 2) -0.7 -1.2

GS

IF = -10.5A, di/dt = 100A/µs

θJC

2

26 42 ns

is guaranteed by design while R

b) 125°C/W when mounted on a minimum pad.

V

is determined by

θCA

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FDS4141 P-Channel PowerTrench

Typical Characteristics T

36

27

18

9

, DRAIN CURRENT (A)

D

-I

0

0123

-V

Figure 1.

1.8

ID = -10.5A V

= -10V

GS

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

T

Figu r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

VGS = -3.5V

VGS = -4V

VGS = - 4.5V

VGS = -10V

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics

, JUNCTION TEMPERATURE (

J

= 25°C unless otherwise noted

J

VGS = -3V

o

C)

4.0

PULSE DURATION = 80µs

3.5

VGS = -3V

DUTY CYCLE = 0.5%MAX

3.0

2.5

2.0

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 9 18 27 36

-I

, DRAIN CURRENT(A)

D

Figure 2.

Norma l i z e d O n - Resistanc e

V

= -3.5V

GS

VGS = -4V

V

= - 4.5V

GS

V

= -10V

GS

vs Drain Current and Gate Voltage

50

ID = -10.5A

40

(mΩ)

30

20

, DRAIN TO

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

-V

, GATE TO SOURCE VOLTA GE (V)

GS

Figure 4.

On-Resistance vs Gate to

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

Source Voltage

®

MOSFET

36

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

27

V

= -5V

DS

18

9

, DRAIN CURRENT (A)

D

-I

0

01234

-VGS, GATE TO SOURCE V OLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 150oC

TJ = 25oC

TJ = -55oC

100

V

= 0V

GS

10

TJ = 150oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

3

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FDS4141 P-Channel PowerTrench

Typical Characteristics T

10

ID = -10.5A

8

6

4

V

2

, GATE TO SOURCE VOLTAGE(V)

GS

-V

0

0 5 10 15 20 25 30 35 40

Figure 7.

20

10

VDD = -20V

= -15V

DD

Qg, GATE CHARGE(nC)

Gate Charge Characteristics

= 25°C unless otherwise noted

J

VDD = -25V

TJ = 25oC

5000

1000

CAPACITANCE (pF)

f = 1MHz V

= 0V

GS

100

60

0.1 1 10

-VDS, DRAIN TO SOURCE VOL TA G E (V)

Figure 8.

Capacitance vs Drain

to Source Voltage

12

9

6

V

= -4.5V

GS

C

iss

C

oss

C

rss

40

®

MOSFET

V

= -10V

GS

TJ = 125oC

, AVALANCHE CURRENT(A)

AS

-I

1

0.01 0.1 1 10 100

Figure 9.

tAV, TIME IN AVALA NCHE(ms)

Uncl a m p e d I n duct i v e

Switching Capability

100

10

1

, DRAIN CURRENT (A)

D

-I

0.01

THIS AREA IS LIMITED BY r

0.1

DS(on)

SINGLE PULSE

= MAX RATED

T

J

o

= 125

θJA

A

= 25

C/W

o

C

R T

0.01 0.1 1 10 100

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

1ms

10ms

100ms

1s 10s

DC

500

200

, DRAIN CURRENT (A)

D

3

-I

R

= 50oC/W

θJA

0

25 50 75 100 125 150

T

, AMBIENT TEMPERATURE (

A

Figure 10.

Ma xim um Continuou s Dr ain

Current vs Ambient Temperature

2000

1000

VGS = -10V

100

SINGLE PULSE R

= 125

θJA

= 25

T

A

10

), PEAK TRANSIENT POWER (W)

1

PK

P(

0.5 10-410-310-210

t, PULSE WIDTH (sec)

Figure 12.

Sing le Pulse Maxim um

-1

110

Power Dissipation

o

C)

o

C/W

o

C

100 1000

4

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FDS4141 P-Channel PowerTrench

Typical Characteristics T

2

NORMALIZED THERMAL

θJA

Z

IMPEDANCE,

0.001

0.0001

1

0.1

0.01

10

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE R

θJA

-4

-3

10

= 25°C unless otherwise noted

J

NOTES:

= 125oC/W

-2

10

t, RECTANGULAR PULSE DURATION (sec)

-1

10

110

DUTY FACTOR: D = t PEAK TJ = PDM x Z

Figure 13. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

5

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Preliminary Datasheet

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FDS4141 P-Channel PowerTrench

®

MOSFET

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Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild Semiconductor. The datasheet is printed for reference information only.

Rev. I31

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