Datasheet FDS3670 Datasheet (Fairchild Semiconductor)

FDS3670

100V N-Channel PowerTrench MOSFET

FDS3670

January 2000

PRELIMINARY

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controller s .

Features

6.3 A, 100 V. R

•

Low gate charge (57 nC typical).

•

= 0.030 Ω @ VGS = 10 V

DS(ON)

R

= 0.033 Ω @ VGS = 6 V.

DS(ON)

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable

specifications.

R

DS(ON)

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

D

Fast switching speed

•

High performance trench technology for extremely

•

DS(ON)

.

5

4

low R

High power and current handling capability.

•

D

G

S

SO-8

S

Absolute Maximum Ratings

TA=25oC unless otherwise noted

6

7 8

3

2 1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 100 V Gate-Source Voltage Drain Current – Continuous

(Note 1a)

20

±

6.3 A

– Pulsed 50

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

(Note 1c)

2.5

1.2

1.0

Operating and Storage Junction Temperature Range -55 to +150

V

W

C

°

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

50 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS3670 FDS3670 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corpor ation



C/W

°

C/W

°

FDS3670 Rev B1 (W)

FDS3670

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain–Source Breakdown Voltage Breakdown Voltage Temperature

DSS

Coefficient

J

V

= 0 V, ID = 250 µA

GS

I

= 250 µA,Referenced to 25°C

D

100 V

92

Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 25 Gate–Body Leakage Current,

VGS = 20 V, VDS = 0 V 100 nA Forward Gate–Body Leakage Current,

VGS = –20 V VDS = 0 V –100 nA Reverse

(Note 2)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source On–Resistance

V

= VGS, ID = 250 µA

DS

= –250 µA,Referenced to 25°C

I

D

VGS = 10 V, ID = 6.3 A

= 10 V, ID = 6.3 A

V

GS

= 6 V, ID = 5.7 A

V

GS

= 125°C

T

J

22.54 V –7.2

0.022

0.039

0.024

On–State Drain Current VGS = 10 V, VDS = 5 V 25 A Forward Transconductance VDS = 5 V, ID = 6.3 A 31 S

0.030

0.060

0.033

mV/°C

A

µ

mV/°C

Ω

Dynamic Characteristics

= 50 V, V

C

iss

C

oss

C

rss

Input Capacitance 2490 pF Output Capacitance 265 pF Reverse Transfer Capacitance

V

DS

f = 1.0 MHz

GS

= 0 V,

80 pF

Switching Characteristics

t t t t Q Q Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 16 26 ns Turn–On Rise Time 10 18 ns Turn–Off Delay Time 56 84 ns Turn–Off Fall Time Total Gate Charge 57 80 nC Gate–Source Charge 11 nC Gate–Drain Charge

(Note 2)

V

= 50 V, ID = 1 A,

DD

= 10 V, R

V

GS

V

= 50 V, ID = 25 A,

DS

= 10 V

V

GS

GEN

= 6

Ω

25 40 ns

15 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

R

1.

JA

θ

the drain pins. R

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2.

Maximum Continuous Drain–Source Diode Forward Current 2.1 A Drain–Source Diode Forward

VGS = 0 V, IS = 2.1 A

(Note 2)

0.72 1.2 V

Voltage

is guaranteed by design while R

JC

θ

a) 50 °C/W when

mounted on a 1in pad of 2 oz copper

is determined by the user's board design.

CA

θ

2

b) 105 °C/W when

mounted on a 0.04 in2 pad of 2 oz copper

c) 125 °C/W when mounted on a

minimum pad.

FDS3670 Rev B1 (W)

Typical Characteristics

FDS3670

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

VGS = 10V

5.5V

012345

5.0V

4.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

4.0V

3.5V

2

1.8

1.6

1.4

, NORMALIZE D

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-R ESI ST ANC E

0.8

VGS = 4.0V

4.5V

5.0V

5.5V

7.0V

0 102030405060

I

, DIRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.2 ID = 7.2A

2

= 10V

V

GS

1.8

1.6

1.4

1.2

, NORMALIZE D

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMP ERA T URE (oC)

T

J

0.06

)

0.05

Ω

0.04

0.03

0.02

, ON-RESISTANCE (

DS(ON)

R

0.01

0

345678910

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

10V

ID = 3.6A

Figure 3. On-Resistance Variation

withTemperature.

60

VDS = 5V

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

23456

125oC

25oC

TA = -55oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS3670 Rev B1 (W)

Typical Characteristics

C

FDS3670

10

ID = 25A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 102030405060

, GATE CHARGE (nC)

Q

g

VDS = 20V

50V

80V

4500 4000 3500 3000 2500 2000 1500

CAPACITANCE (pF)

1000

500

0

0 20406080100

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

C

ISS

C

RSS

OSS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIM I T

DS(ON)

10

1

VGS = 10V

SINGL E PU L SE

, DRAIN CURRENT (A)

0.1

D

I

0.01

= 125oC/W

R

JA

θ

TA = 25oC

0.1 1 10 100 1000

10s

DC

, DRAIN-SOURCE VOLTAGE (V)

V

DS

100ms

1s

10ms

100µs

1ms

50

40

30

20

POWER (W)

10

0

0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

= 125oC/W

JA

θ

T

= 25oC

A

f = 1MHz

= 0 V

V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSI ENT THER MAL RESISTANCE

0.001

0.2

0.1

0.05

0.02

0.01 S i n g l e P u l s e

0.0001 0.001 0.01 0.1 1 10 100 300 t , TI ME (s e c)

1

R (t) = r(t) * R

JA

θ

R = 125°C/ W

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

D u t y C y c l e, D = t /t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

JA

θ

JA

θ

2

1

FDS3670 Rev B1 (W)

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE PT NUMBER PEEL STRENGTH MIN ______________gms

Customized Label

Packaging Option Packaging type

Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg)

Note/Comments

MAX _____________ gms

ESD Label

SOIC (8lds) Packaging Information

Standard

(no flow code)

2,500 95 4,000

13" Dia

343x64x343 530x130x83 343x64x343

5,000 30,000 8,000

0.0774 0.0774 0.0774 0.0774

0.6060 - 0.9696 0.1182

TNR

L86Z F011

Rail/Tube-TNR

13" Dia

Embossed Car rier Tape

Antistatic Cover Tape

Static Dissipative

F63TNR Label

D84Z TNR

500

7" Dia

184x18 7x47

1,000

F

NDS

9959

852

SOIC-8 Unit Orientation

343mm x 342mm x 64mm

Stand a r d In t e rm ed iate box

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 uni t s pe r 13" o r 33 0c m d ia met er reel . Th e reel s ar e dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm di ameter reel. This and some o ther options are further described in the Packaging Information table.

These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in di ff ere nt siz es depe nd in g on th e num be r of pa rts shippe d.

F

NDS

9959

F

NDS

9959

F

NDS

852

F

NDS 9959

852

Pin 1

F63TNR Label sample

LOT: CBVK741B019

FSID: FDS9953A

D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:

QTY: 2500

SPEC:

N/F: F (F63TNR)3

SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape 640mm minimum or 80 empty pockets

F63TNLab el

ESD Label

Components

ESD Label

F63TNLabel

Leader Tape 1680mm minimum or 210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

D1

P1

User Direction of Feed

Dimensions are in millimeter

Pkg type

(8lds)

SOIC

(12mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOIC(8lds) Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

6.50

5.30

12.0

1.55

1.60

1.75

10.25

+/-0.10

+/-0.3

+/-0.05

+/-0.10

rotational and lateral movement requirements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

5.50

min

+/-0.05

20 deg maximum

A0

Sketch B (Top View)

Component Rotation

W1 Measured at Hub

8.0 +/-0.1

Typical component cavity center line

Typical component center line

Dim A

Max

4.0 +/-0.1

0.450

2.1 +/-0.10

0.5mm maximum

Sketch C (Top View)

Component lateral movement

+/-

0.150

9.2 +/-0.3

0.5mm maximum

0.06 +/-0.02

Dim A

max

Tape Size

12mm 7" Dia

12mm 13" Dia

 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

W3

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00 330

1.5

0.059

1.5

512 +0.020/-0.008 13 +0.5/-0.2

0.795

2.165550.488 +0.078/-0.000

20.2

0.795

7.00

20.2

178

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.724

18.4

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions show n below are in:

inches [millimet ers]

Part Weight per unit (gram): 0.0774

9

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™

2

CMOS

E

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench



QFET™ QS™

Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. D