Datasheet FDS3601 Datasheet (Fairchild Semiconductor)

FDS3601

100V Dual N-Channel PowerTrench



MOSFET

FDS3601

August 2001

General Description

These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controll e r s.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable

specifica tions. The result is a MOSFET that is

R

DS(ON)

easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.

Features

• 1.3 A, 100 V. R
R

• Fast switching speed

• Low gate charge (3.7nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

= 480 mΩ @ VGS = 10 V

DS(ON)

= 530 mΩ @ VGS = 6 V

DS(ON)

D1

D1

D2

D2

G1

S2

S1

G2

SO-8

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

5

Q1

6
7

Q2

8

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 100 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 1.3 A

– Pulsed 6
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range –55 to +175

±20

1.0

0.9

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS3601 FDS3601 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

FDS3601 Rev C(W)

FDS3601

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W

DSS

I

AR

Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 1.3 A 26 mJ
Drain-Source Avalanche Current 1.3 A

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

V

GS

= 250 µA,Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

100 V

105

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA,Referenced to 25°C

I

D

V

= 10 V, ID = 1.3 A

GS

= 6 V, ID = 1.3 A

V

GS

= 10 V, ID = 1.3 A, TJ= 125°C

V

GS

On–State Drain Current VGS = 10 V, VDS = 10 V 3 A
Forward Transconductance VDS = 5V, ID = 1.3 A 3.6 S

22.64 V
–5

350
376
664

mV/°C

480
530
955

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 153 pF
Output Capacitance 5 pF
Reverse Transfer Capacitance

= 50 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

1pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 8 16 ns
Turn–On Rise Time 4 8 ns

V

= 50 V, ID = 1 A,

DD

= 10 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 11 20 ns
Turn–Off Fall Time
Total Gate Charge 3.7 5 nC
Gate–Source Charge 0.8 nC

= 50 V, ID = 1.3 A,

V

DS

= 10 V

V

GS

Gate–Drain Charge

612ns

1nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward

VGS = 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

mΩ

a) 78°C/W when

mounted on a

2

pad of 2

0.5in
oz copper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 125°C/W when

mounted on a

2

pad of

0.02 in
2 oz copper

c) 135°C/W when

mounted on a
minimum pad.

FDS3601 Rev C(W)

Typical Characteristics

)

E

4

VGS =10V

6.0V

3

2

, DRAIN CURRENT (A

1

D

I

0

02468

5.0V

4.5V

, DRAIN-SOURCE VOL TAGE (V)

V

DS

4.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

1.6

VGS = 4.0V

1.4

1.2

, NORMALIZED

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
01234

4.5V

5.0V

I

, DRAIN CURRENT (A)

D

Drain Current and Gate Voltage.

6.0V

FDS3601

10V

2.6
ID = 1.3A

2.2

V

= 10V

GS

1.8

1.4

, NORMALIZED

1

DS(ON)

R

0.6

DRAIN-SOURCE ON-RESISTANC

0.2

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation with

Temperature.

6

VDS = 5V

4.5

3

, DRAIN CURRENT (A)

1.5

D

I

0

1.5 2.5 3.5 4.5 5.5

V

GS

TA = 125oC

25oC

-55oC

, GATE TO SOURCE VOLTAGE (V)

1.25
ID = 0.6A

1

0.75

, ON-RESISTANCE (OHM)

0.5

DS(ON)

TA = 25oC

R

0.25

2.545.578.510

V

GS

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS3601 Rev C(W)

Typical Characteristics

)

10

ID = 1.3A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

01234

, GATE CHARGE (nC)

Q

g

VDS = 30V

50V

70V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

200

C

ISS

150

100

CAPACITANCE (pF)

50

C

OSS

C

RSS

0

0 1020304050

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

f = 1MHz

V

= 0 V

GS

FDS3601

10

R

LIMIT

DS(ON)

1

0.1

, DRAIN CURRENT (A

D

I

0.001

VGS = 10V

SINGLE PULSE

0.01
= 135oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100 1000

, DRAIN-SOURCE VOLTAGE (V)

V

DS

10ms
100ms
1s

10s

DC

100µs

1ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

SINGLE PULSE

R

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

R

(t) = r(t) + R

JA

0.2

0.1

0.1

0.05

0.02

0.01

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

SINGLE PULSE

0.0001 0.001 0.01 0.1 1 10 100 1000

θ

R

θJA

P(pk)

T

- TA = P * R

J

Duty Cycle, D = t

=135°C/W

θ

JA

T

= 25°C

A

= 135 °C/W

t

1

t

2

θ

JA

θ

(t)

JA

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS3601 Rev C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™



OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER



SMART ST ART™

ST AR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H3