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FDS3590
80V N-Channel PowerTrench® MOSFET
FDS3590
November 2000
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controller s .
Features
• 6.5 A, 80 V R
• Low gate charge
= 39 mΩ @ VGS = 10 V
DS(ON)
R
= 44 mΩ @ VGS = 6 V
DS(ON)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications.
R
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D
D
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
5
4
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
6
7
8
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 80 V
Gate-Source Voltage
±20
Drain Current – Continuous (Note 1a) 6.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature
1.2
1.0
-55 to +150
Range
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS3590 FDS3590 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS3590 Rev C (W)
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FDS3590
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
VDD = 40 V, ID = 6.5 A 175 mJ
6.5 A
Off Characteristics
BV
DSS
∆BVDSS
===∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
80 V
88
Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)n
∆VGS(th)
===∆T
R
DS(on)
I
D(on)
G
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS,ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 6.5 A
= 10 V, ID = 6.5 A, TJ = 125°C
V
GS
= 6 V, ID = 4.5 A
V
GS
24V
–6
32
61
34
On–State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VGS = 10 V, ID = 6.5 A 25 S
39
86
44
mV/°C
mΩ
Dynamic Characteri stics
= 40 V, V
C
iss
C
oss
C
rss
Input Capacitance 1180 pF
Output Capacitance 171 pF
Reverse Transfer Capacitance
V
DS
f = 1.0 MHz
GS
= 0 V,
50 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 8 16 ns
Turn–Off Delay Time 26 50 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 25 35 nC
Gate–Source Charge 4.5 nC
Gate–Drain Charge
V
= 40 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 40 V, ID = 6.5 A,
DS
= 10 V
V
GS
GEN
= 6 Ω
12 25 ns
5.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 50 °C/W when
mounted on a 1in
pad of 2 oz copper
is determined by the user's board design.
θCA
2
b) 105 °C/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125 °C/W when mounted on a
minimum pad.
FDS3590 Rev C. (W)
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Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS3590 Rev C. (W)
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Typical Characteristics
)
E
E
)
)
FDS3590
50
VGS = 10V
6.0V
40
30
20
, DRAIN CURRENT (A
D
I
10
0
02468
5.0V
4.5V
4.0V
3.5V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
2
1.8
, NORMALIZED
R
DS(ON)
1.6
1.4
1.2
DRAIN-SOURCE ON-RESISTANC
0.8
1
VGS = 4.0V
4.5V
5.0V
6.0V
10V
0 1020304050
I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
ID = 6.5A
= 10V
V
GS
1.8
1.4
, NORMALIZED
1
DS(ON)
R
0.6
DRAIN-SOURCE ON-RESISTANC
0.2
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPE RATURE (oC)
J
0.1
0.075
0.05
, ON-RESISTANCE (OHM)
0.025
DS(ON)
R
0
246810
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = 125oC
TA = 25oC
ID = 3.5 A
Figure 3. On-Resistance Variation with
Temperature.
40
VDS = 5V
30
20
, DRAIN CURRENT (A
10
D
I
0
23456
TA = -55oC 25oC
V
, GATE TO SOURCE VOLT AGE ( V )
GS
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A
S
I
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3590 Rev C. (W)
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Typical Characteristics
)
)
)
FDS3590
10
ID = 6.5A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 6 12 18 24 30
Q
, GATE CHARGE (nC)
g
VDS = 10V
40V
20V
2000
1500
1000
CAPACITANCE (pF
500
C
RSS
0
0 20406080
V
C
ISS
C
OSS
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
VGS = 10V
SINGLE PULSE
, DRAIN CURRENT (A
0.1
D
I
R
= 125oC/W
θ
JA
= 25oC
T
A
0.01
0.1 1 10 100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
1s
10s
DC
100ms
10ms
100µs
1ms
30
SINGLE PULSE
R
25
20
15
10
, Maximum Peak Power (W)
pk
5
P
0
0.01 0.1 1 10 100
t, SINGLE PULSE TIME (sec)
= 125°C/W
θ
JA
T
= 25°C
A
f = 1MHz
= 0 V
V
GS
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.05
0.02
0.01
Single Pulse
, TIME (sec)
t
1
R
(t) = r(t) + R
θJA
R
= 125 °C/W
θJA
P(pk
t
1
t
2
- TA = P * R
T
J
Duty Cycle, D = t
θJA
(t)
θJA
/ t
1
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3590 Rev C. (W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna
TM
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FACT™
FACT Quiet Series™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
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PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
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NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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