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FDS3512
80V N-Channel PowerTrench® MOSFET
FDS3512
May 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSF ET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 4.0 A, 80 V R
R
• Low gate charge (13nC Typical)
• Fast switching speed
• High performance trench te chnology for extremely
low R
• High power and current handling capability
DS(ON)
= 70 mΩ @ VGS = 10 V
DS(ON)
= 80 mΩ @ VGS = 6 V
DS(ON)
D
D
5
4
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
6
7
8
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 80 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 4.0 A
– Pulsed 30
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
±20
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS3512 FDS3512 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
FDS3512 Rev B1 (W)
°C/W
°C/W
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FDS3512
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Single Pulse Drain-Source
DSS
VDD = 40 V, ID = 4.0 A 90 mJ
Avalanche Energy
IAR Maximum Drain-Source
4.0 A
Avalanche Current
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leak age, Reverse VGS = –20 V, VDS = 0 V –100 nA
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
80 V
80
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)n
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
V
= VGS, ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 4.0 A
= 6 V, ID = 3.7A
V
GS
= 10 V, ID = 4.0 A, TJ = 125°C
V
GS
2 2.4 4 V
–6
50
55
91
70
80
135
mV/°C
mΩ
GFS Forward Transconductance VGS = 10 V, ID = 4.0 A 14 S
Dynamic Characteristics
C
Input Capacitance 634 pF
iss
C
Output Capacitance 58 pF
oss
C
Reverse Transfer Capacitance
rss
= 40 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
28 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 3 6 ns
t
Turn–Off Delay Time 24 38 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 13 18 nC
Qgs Gate–Source Charge 2.4 nC
Qgd Gate–Drain Charge
V
= 40 V, ID = 1 A,
DD
= 10 V, R
V
GS
= 40 V, ID = 4.0 A,
V
DS
= 10 V
V
GS
GEN
= 6 Ω
4 8 ns
2.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Di ode Forward Current 2.1 A
VSD Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A (Note 2) 0.8 1.2 V
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper
is determined by the user's board design.
θCA
b) 105 °C/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125 °C/W when mounted on a
minimum pad.
FDS3512 Rev B1 (W)
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E
)
Typical Characteristics
FDS3512
20
VGS = 10V
15
10
, DRAIN CURRENT (A)
5
D
I
0
012345
6.0V
5.0V
4.5V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
4.0V
1.8
1.6
VGS = 4.0V
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 5 10 15 20
4.5V
5.0V
I
, DRAIN CURRENT (A)
D
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.5
ID = 4A
2.2
= 10V
V
GS
1.9
1.6
1.3
, NORMALIZED
DS(ON)
1
R
0.7
DRAIN-SOURCE ON-RESISTANC
0.4
-50 -25 0 25 50 75 100 125 150 175
T
, JUNCTION TEMPERATURE (oC)
J
0.18
0.14
TA = 125oC
0.10
, ON-RESISTANCE (OHM)
0.06
DS(ON)
R
TA = 25oC
0.02
246810
V
, GATE TO SOURCE VOLTAGE (V)
GS
10V
ID =2A
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 5V
15
10
TA = 125oC
, DRAIN CURRENT (A)
D
5
I
0
2345
V
, GATE TO SOURCE VOLTAGE (V)
GS
25oC
-55oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
, BODY DIODE FORWARD V O LTAGE (V)
V
SD
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3512 Rev B1 (W)
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)
Typical Characteristics
FDS3512
10
ID = 4A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 3 6 9 12 15
, GATE CHARGE (nC)
Q
g
VDS = 20V
60V
40V
1000
800
600
400
CAPACITANCE (pF)
200
C
OSS
C
RSS
0
0 20406080
C
ISS
, DRAIN TO SOURCE VOLT AGE ( V )
V
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
VGS = 10V
SINGLE PULSE
, DRAIN CURRENT (A
0.1
D
I
0.01
= 125oC/W
R
θ
JA
T
= 25oC
A
0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V )
V
DS
DC
10s
1ms
10ms
100ms
1s
100µs
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
SINGLE PULSE
= 125°C/W
R
θ
JA
T
= 25°C
A
f = 1MHz
V
= 0 V
GS
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
(t) = r(t) + R
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
0.1
0.05
0.02
0.01
SINGLE PULSE
JA
θ
R
= 125 °C/W
θJA
P(pk)
t
1
T
- TA = P * R
J
Duty Cycle, D = t
JA
θ
t
2
(t)
θJA
/ t
1
2
0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3512 Rev B1 (W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
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