Page 1
tm
FDS2734
N-Channel UItraFET Trench® MOSFET
250V, 3.0A, 117mΩ
FDS2734 Single N-Channel UItraFET Trench
August 2006
Features
Max r
Max r
Fast switching speed
High performance trench technology for extremely
low r
High power and current handling capability
RoHS compliant
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
=117mΩ at V
DS(on)
=126mΩ at V
DS(on)
DS(on)
D
D
D
SO-8
Pin 1
Drain to Source Voltage 250 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 3.0
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 12.5 mJ
Power dissipation (Note 1a) 2.5
Power dissipation (Note 1b) 1.0
Operating and Storage Junction Temperature Range -55 to 150
GS
GS
D
=10V, ID = 3.0A
= 6V, ID = 2.8A
G
S
S
S
= 25°C unless otherwise noted
A
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
5
6
7
8
4
3
2
1
®
®
MOSFET
A
W
o
C
Thermal Characteristics
R
θJA
θJA
R
θJC
Thermal Resistance, Junction- to -Ambient (Note 1a) 50
Thermal Resistance, Junction- to- Ambient (Note 1b) 125
Thermal Resistance, Junction -to- Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS2734 FDS2734 SO-8 13’’ 12mm 2500 units
©2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
o
C/WR
www.fairchildsemi.com1
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Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆ T
I
DSS
I
GSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 250 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I
= 250µA, referenced to 25oC 157 mV/oC
D
V
= 200V,VGS=0 V 1
DS
= 200V, VGS = 0V TJ = 55oC10
V
DS
Gate to Source Leakage Current VGS = ±20V, VDS =0 V ±100 nA
FDS2734 Single N-Channel UItraFET Trench
µA
On Characteristics
V
GS(th)
∆V
GS(th)
∆ T
r
DS(on)
g
FS
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA234V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS=10V, ID =3.0A, 15.1 S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 85 130 pF
Reverse Transfer Capacitance 26 40 pF
Gate Resistance f = 1MHz 0.7 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 11 19 ns
Turn-Off Delay Time 40 64 ns
Fall Time 11 19 ns
Total Gate Charge
Gate to Source Gate Charge 9 nC
Gate to Drain Charge 8 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage I
Reverse Recovery Time
Reverse Recovery Charge 185 278 nC
I
= 250µA, referenced to 25oC -10.7 mV/
D
V
= 10V, ID = 3.0A, 97 117
GS
= 6V , ID = 2.8A, 101 126
GS
= 10V, ID = 3.0A, TJ = 125oC 205 225
V
GS
= 100V, VGS = 0V,
V
DS
f = 1MHz
1960 2610 pF
23 37 ns
V
= 125V, ID = 3A
DD
V
= 10V, RGS = 6Ω
GS
V
= 125V, V
DS
I
= 3.0A
D
= 3.0A 0.74 1.2 V
SD
I
= 3.0 A, diF/dt = 100A/µs
F
GS
= 10V
32 45 nC
72 108 ns
c
mΩV
®
MOSFET
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
2: Pulse Test Width <300
3: Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 100V, VGS = 10V
FDS2734 Rev. B
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
µs, Duty Cycle <2%.
is determined by the user’s board design.
θCA
2
b) 125°C/W when
mounted on a minimum
pad of 2 oz copper
Scale 1 : 1 on letter size paper
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Page 3
Typical Characteristics T
= 25°C unless otherwise noted
J
FDS2734 Single N-Channel UItraFET Trench
50
VGS- Descending Order
VGS = 10V
40
8V
6V
5V
30
20
10
, DRAIN CURRENT (A)
D
I
0
0246810
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
Figure 1. On Region Characteristics
2.8
ID = 3.0A
= 10V
V
GS
2.4
2.0
1.6
1.2
NORMALIZED
0.8
0.4
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2.5
V
= 5V
2.0
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
Figure 2.
VGS = 4.5V
0 1020304050
Normalized On-Resistance vs Drain
GS
VGS = 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT(A)
VGS = 10V
VGS = 8V
Current and Gate Voltage
0.4
0.3
0.2
0.1
, ON-RESISTANCE (mΩ)
DS(on)
r
0.0
345678910
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
ID =3A
DUTY CYCLE = 0.5 %MAX
T
= 25
J
TJ = 150oC
o
C
®
MOSFET
Figure 3. Normalized
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
15
10
, DRAIN CURRENT (A)
5
D
I
0
23456
Figure 5. Transfer Characteristics
FDS2734 Rev. B
On Resistance vs Junction
Temperature
TJ = 150oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
V
= 0V
GS
10
TJ = 150oC
TJ = 25oC
1
, REVERSE DRAIN CURRENT (A)
S
I
0.1
0.00.20.40.60.81.01.21.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode Forward Voltage
TJ = -55oC
vs Source Current
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Page 4
Typical Characteristics T
10
= 25°C unless otherwise noted
J
5000
FDS2734 Single N-Channel UItraFET Trench
Ciss
8
V
= 50V
DD
VDD = 125V
6
4
VDD = 200V
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 10203040
Figure 7.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
10
1
TJ = 25oC
TJ = 125oC
, AVALANCHE CURRENT (A)
AS
I
0.1
1E-3 0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (mS)
1000
100
Coss
Crss
CAPACITANCE (pF)
10
0.1 1 10 100
VDS,DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source Voltage
3.5
3.0
V
= 10V
2.5
GS
2.0
V
= 6V
1.5
1.0
, DRAIN CURRENT (A)
D
I
0.5
R
= 50
θJA
0.0
25 50 75 100 125 150
GS
o
C/W
TA, AMBIENT TEMPERATURE(oC)
f = 1MHz
VGS = 0V
®
MOSFET
Figure 9. Unclamped Inductive Switching
Capability
2
10
1
10
0
10
-1
10
, DRAIN CURRENT (A)
-2
D
10
I
-3
10
-1
10
Figure 11.
FDS2734 Rev. B
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
0
SINGLE PULSE
= MAX RATED
T
J
= 25oC
T
A
1
10
Figure 10.
Maximum Continuous Drain Current vs
Ambient Temperature
4
10us
3
10
1ms
10ms
100ms
1s
DC
2
10
3
10
2
10
VGS = 10V
1
10
), PEAK TRANSIENT POWER (W)
SINGLE PULSE
PK
0
10
P(
-3
10
-2
10
10
t, PULSE WIDTH (s)
10
-1
TA = 25oC
FOR TEMPERATURES
o
ABOVE 25
CURRENT AS FOLLOWS:
10010
I = I
25
C DERATE PEAK
150 TA–
------------------------
1
125
2
10
3
10
Dissipation
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Page 5
FDS2734 Single N-Channel UItraFET Trench
Typical Characteristics T
4
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
θJA
0.05
0.02
0.01
0.01
= 25°C unless otherwise noted
J
1E-3
IMPEDANCE, Z
1E-4
NORMALIZED THERMAL
1E-5
-4
10
SINGLE PULSE
10
-3
-2
10
-1
10
0
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design
P
DM
t
1
t
2
1/t2
x R
+ T
θ
JA
θ
JA
A
2
10
3
10
®
MOSFET
FDS2734 Rev. B
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As used herein:
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(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) wh ose failure to pe rform when pr operly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
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Definition of Terms
Datasheet Identification Product Status Definiti on
Advance Information Formative or In Design This datasheet contains the design specifications for
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
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changes at any time without notice to improve
design.
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Rev. I20
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