Page 1
February 2010
FDS2672_F085 N-Channel UltraFET Trench
FDS2672_F085
N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70mΩ
Features
Max r
Max r
Fast switching speed
High performance trench technology for extremely low
r
DS(on)
Qualified to AEC Q101
RoHS compliant
DS(on)
DS(on)
SO-8
= 70mΩ at V
= 80mΩ at V
D
D
Pin 1
= 10V, ID = 3.9A
GS
= 6V, ID = 3.5A
GS
D
D
G
S
S
S
General Description
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
5
6
7
8
tm
®
®
MOSFET
4
3
2
1
MOSFET Maximum Ratings
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 200 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 3.9
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 37.5 mJ
Power Dissipation (Note 1a) 2.5
Power Dissipation (Note 1b) 1.0
Operating and Storage Temperature -55 to 150 °C
TA = 25°C unless otherwise noted
Thermal Characteristics
R
θJC
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Thermal Resistance, Junction to Ambient (Note 1b) 125
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS2672 FDS2672_F085 13’’ 12mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDS2672_F085 Rev. A
www.fairchildsemi.com1
A
W
°C/WR
Page 2
FDS2672_F085 N-Channel UltraFET Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 200 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to 25°C 206 mV/°C
V
= 160V, VGS=0V 1 µA
DS
V
= 160V, VGS=0V TJ = 55°C 10 µA
DS
Gate to Source Leakage Current VGS = ±20V ±100 nA
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 2.9 4 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transcondductance VDS = 10V,ID = 3.9A 15 S
ID = 250µA, referenced to 25°C -11 mV/°C
VGS = 10V, ID = 3.9A 59 70
VGS = 10V, ID = 3.9A, TJ = 125°C 124 148
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 100 135 pF
Reverse Transfer Capacitance 30 45 pF
VDS = 100V, VGS = 0V,
f = 1MHz
1905 2535 pF
Gate Resistance f = 1MHz 0.7 Ω
mΩVGS = 6V, ID = 3.5A 63 80
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 10 20 ns
Turn-Off Delay Time 35 56 ns
VDD = 100V, ID = 3.9A
VGS = 10V, R
GEN
= 6Ω
22 35 ns
Fall Time 10 20 ns
Total Gate Charge at 10V
Gate to Source Gate Charge 11 nC
VDD =100V ID = 3.9A
33 46 nC
Gate to Drain “Miller”Charge 7 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
the drain pins. R
Source to Drain Diode Voltage V
= 0V, IS = 3.9A 0.75 1.2 V
GS
Reverse Recovery Time IF = 3.9A, di/dt = 100A/µs 67 101 ns
Reverse Recovery Charge IF = 3.9A, di/dt = 100A/µs 179 269 nC
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a 1in
pad of 2 oz copper
is determined by the user’s board design.
θCA
2
b) 125°C/W when mounted on a
minimum pad .
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T
FDS2672_F085 Rev. A www.fairchildsemi.com2
= 25°C, L = 3mH, IAS = 5A, VDD = 100V, VGS = 10V
J
Page 3
FDS2672_F085 N-Channel UltraFET Trench
Typical Characteristics T
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
V
= 6V
GS
= 25°C unless otherwise noted
J
VGS = 10V
30
20
10
, DRAIN CURRENT (A)
D
I
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 5V
V
GS
Figure 1. On Region Characteristics
2.8
ID = 3.9A
V
= 10V
GS
2.2
1.6
NORMALIZED
1.0
0.4
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
= 4.5V
3.0
2.5
V
= 4.5V
GS
2.0
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN CURRENT(A)
Figure 2. Normalized
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 5V
GS
On-Resistance vs Drain
Current and Gate Voltage
180
ID = 3.9A
(mΩ)
160
140
120
100
, DRAIN TO
80
DS(on)
r
60
SOURCE ON-RESISTANCE
40
3.0 4.5 6.0 7.5 9.0
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
o
T
= 25
C
J
V
= 6V
GS
V
= 10V
GS
®
MOSFET
10
Figure 3.
Normalized On Resistance vs Junction
Temperature
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
25
V
= 10V
DD
20
15
TJ = 150oC
TJ = 25oC
10
, DRAIN CURRENT (A)
D
I
5
0
23456
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = - 55oC
Figure 5. Transfer Characteristics
FDS2672_F085 Rev. A www.fairchildsemi.com3
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
V
= 0V
GS
10
1
0.1
TJ = 150oC
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diod e Forward
TJ = 25oC
TJ = -55oC
Voltage vs Source Current
Page 4
FDS2672_F085 N-Channel UltraFET Trench
Typical Characteristics T
= 25°C unless otherwise noted
J
10
V
= 50V
8
DD
VDD = 100V
6
4
VDD = 150V
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 8 16 24 32 40
Figure 7.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
10
TJ = 25oC
1
, AVALANCHE CURRENT(A)
AS
I
0.1
0.01 0.1 1 10 100 1000
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
10000
C
iss
1000
C
oss
100
CAPACITANCE (pF)
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
Capacitance vs Drain to Source Voltage
4.0
3.5
3.0
V
2.5
2.0
V
= 6V
GS
1.5
1.0
, DRAIN CURRENT (A)
D
I
0.5
R
= 50oC/W
θJA
0.0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
GS
rss
f = 1MHz
V
= 10V
GS
= 0V
®
MOSFET
Figure 9.
Unclamped Inductive Switching
Capability
2
10
1
10
0
10
-1
10
, DRAIN CURRENT (A)
-2
D
10
I
-3
10
0.01 0.1 1 10 100 1000
LIMITED BY
PACKAGE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
= MAX RATED
J
O
C
TA = 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11.
FDS2672_F085 Rev. A www.fairchildsemi.com4
Forward Bias Safe Operating Area Figure 12. Single
100us
1ms
10ms
100ms
1s
DC
Figure 10.
Ambient Continuous Drain Current vs
Case Temperature
3000
1000
VGS = 10V
100
10
), PEAK TRANSIENT POWER (W)
PK
P(
SINGLE PULSE
1
10-410-310-210-110010110210
t, PULSE WIDTH (s)
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
I = I
25
Pulse Maximum Power
Dissipation
150 TA–
----------------------- -
125
3
Page 5
FDS2672_F085 N-Channel UltraFET Trench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
θJA
0.05
0.02
0.01
IMPEDANCE, Z
1E-3
NORMALIZED THERMAL
1E-4
0.01
SINGLE PULSE
-4
10
-3
10
= 25°C unless otherwise noted
J
-2
10
-1
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design
θJA
P
DM
t
1
t
2
2
x R
+ T
θJA
A
2
10
3
10
®
MOSFET
FDS2672_F085 Rev. A www.fairchildsemi.com5
Page 6
tm
®
tm
tm
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned b y Fairchild Semiconductor and /or its globa l subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
F-PFS™
®
®
®
®
®
®
*
®
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
®
®
™
®
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDS2672_F085 N-Channel UltraFET Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semico nductor products are experienci ng counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts e xperien ce man y prob lems such as loss o f brand re put ation, substa ndard perf ormance, fa iled
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselve s and our customers from the
proliferation of counterfeit parts. Fairchild st rongly encourage s custome rs to purchase Fairch ild parts either dire ctly from Fa irchild or from Autho rized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buyin g direct or from aut horized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time withou t
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
FDS2672_F085 Rev. A www.fairchildsemi.com6
Rev. I47
Loading...