Datasheet fdq7238as Datasheet

May 2008

FDQ7238AS

Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package

FDQ7238AS

General Description

The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.

TM

technology. The FDQ7238AS

S2

G2

Vin

G1

= 25°C unless otherwise noted

A

SO-14

pin 1

Absolute Maximum Ratings T

Features

• Q2: 14 A, 30V. R R

• Q1: 11 A, 30V. R R

= 8.7 mΩ @ VGS = 10V

DS(on)

= 10.5 mΩ @ VGS = 4.5V

DS(on)

= 13.2 mΩ @ VGS = 10V

DS(on)

= 16 mΩ @ VGS = 4.5V

DS(on)

Symbol Parameter Q2 Q1 Units

V

Drain-Source Voltage 30 30 V

DSS

V

Gate-Source Voltage

GSS

- Pulsed

TJ, T

Operating and Storage Junction Temperature Range

STG

(Note 1c & 1d)

±20 ±20

14 11 ID Drain Current - Continuous (Note 1a) 50 50

2.4 1.8 PD Power Dissipation for Single Operation (Note 1a & 1b)

1.3 1.1

−55 to +150 °C

V A

W

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68

(Note 1c & 1d)

94 118

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDQ7238AS FDQ7238AS 13” 16mm 2500 units

FDQ7238AS Rev A1(X)

FDQ7238AS

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

∆BVDSS ∆T

I

DSS

I

GSS

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage

VGS = 0 V, ID = 1 mA V

= 0 V, ID = 250 µA

GS

I

= 10 mA, Referenced to 25°C

D

= 250 µA, Referenced to 25°C

I

D

Q2 Q1

VDS = 24 V, VGS = 0 V Q2

Q1

= 24 V, VGS = 0 V,

V

DS

= 125°C

T

J

V

= ±20 V, VDS = 0 V

GS

Q2 Q1

ALL

30

V

30

25 24

5.6 40

500

1

±100

mV/°C

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 1 mA

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source

On-Resistance

I

On–State Drain Current VGS = 10 V, VDS = 5 V

D(on)

= VGS, ID = 250 µA

V

DS

I

= 10 mA, Referenced to 25°C

D

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 14 A V

= 4.5 V, ID = 13 A

GS

V

= 10 V, ID = 14A, TJ = 125°C

GS

V

= 10 V, ID = 11 A

GS

V

= 4.5 V, ID = 10 A

GS

= 10 V, ID = 11, TJ = 125°C

V

GS

V

= 10 V, VDS = 5 V

GS

gFS Forward Transconductance VDS = 10 V, ID = 14 A

= 10 V, ID = 11 A

V

DS

Q2 Q1 1 1

Q2 Q1

Q2

Q1 11

Q2 Q1 Q2 Q1

1.8

1.7 3 3

−3

−4

7.2

8.7 10

13 15

50

A

50

58

43

mV/°C

8.7

10.5

12.5

13.2 16 19

S

Dynamic Characteristics

C

Input Capacitance Q2

iss

C

Output Capacitance Q2

oss

C

Reverse Transfer Capacitance

rss

V

= 15 V, VGS = 0 V,

DS

f = 1.0 MHz

Rg Gate Resistance VGS = 15mV, f = 1.0 MHz Q2

Q1 Q1

Q2 Q1

Q1

1530

920

440

190

160

120

1.9

pF pF pF

µA

mA

µA nA

V

mΩ

Ω

FDQ7238AS Rev A1 (X)

FDQ7238AS

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2)

t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time t

Turn-Off Delay Time

d(off)

tf Turn-Off Fall Time t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time t

Turn-Off Delay Time

d(off)

tf Turn-Off Fall Time Q

Total Gate Charge, VGS = 10V

g(TOT)

Q

Total Gate Charge, VGS = 5V

g(TOT)

Qgs Gate-Source Charge Qgd Gate-Drain Charge

V

= 15 V, ID = 1 A,

DD

V

= 10V, R

GS

= 15 V, ID = 1 A,

V

DD

= 4.5V, R

V

GS

Q2 V

= 15 V, ID = 14A

DS

Q1 V

= 15 V, ID = 11A

DS

GEN

= 6 Ω

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1

12 9 21

18

13 5 23

10

30

27

49 43

19 4 35

8

17 18 28

11 15 16

30 20 32 26 44 29

13 9 23

18

28

17

39 24

15 9 21

19

4.1

2.7

4.9

3.3

ns ns ns ns ns ns ns

ns nC nC

nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q2

Q1

VSD Drain-Source Diode Forward

Voltage

t

rr

Diode Reverse Recovery Time 22 ns Qrr Diode Reverse Recovery Charge t

rr

Diode Reverse Recovery Time 16 ns Qrr Diode Reverse Recovery Charge

NOTE :

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

θJA

surface of the drain pins. R

is guaranteed by design while R

θJC

VGS = 0 V, IS = 3.4 A (Note 2) VGS = 0 V, IS = 1.9 A (Note 2)

= 0 V, IS = 2.1 A (Note 2)

V

GS

I

= 14A

F

dI

/dt = 300 A/µs

F

= 11A

I

F

/dt = 100 A/µs

dI

F

is determined by the user's board design.

θCA

Q2 Q1

Q2

Q1

3.4

0.5

0.4

0.7

15 nC

5 nC

2.1

0.7

1.2

A V

a) 68°C/W when

mounted on a 1in2 pad of 2 oz copper (Q1).

b) 52°C/W when

mounted on a 1in of 2 oz copper (Q2).

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 4

2

pad

c) 118°C/W when mounted

on a minimum pad of 2 oz copper (Q1).

d) 94°C/W when mounted on

a minimum pad of 2 oz copper (Q2).

FDQ7238AS Rev A1(X)

Typical Characteristics: Q2

FDQ7238AS

50

VGS = 10V

6.0V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

0 0.5 1 1.5 2

3.5V

4.0V

4.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

3.0V

2.5V

2.6

VGS = 3.0V

2.2

1.8

, NORMALIZED

DS(ON)

R

DRAIN-SOURCE ON-RESISTANCE

3.5V

1.4

1

0.6 0 1020304050

4.0V

4.5V

, DRAIN CURRENT (A)

I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 ID = 14A

V

=10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation with

Temperature.

0.024

0.02

0.016

0.012

, ON-RESISTANCE (OHM)

TA = 25oC

DS(ON)

0.008

R

0.004 246810

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

6.0V

10.0V

ID = 7A

50

VDS = 5V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

11.522.533.54

TA = 125oC

25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

100

VGS = 0V

10

TA = 125oC

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

with Source Current and Temperature.

FDQ7238AS Rev A1 (X)

Typical Characteristics : Q2

FDQ7238AS

10

ID = 14A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20 25 30

VDS = 10V

, GATE CHARGE (nC)

Q

g

20V

15V

2500

2000

1500

1000

CAPACITANCE (pF)

500

C

rss

0

0 5 10 15 20 25 30

C

oss

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

C

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

100µs

1s

100ms

10ms

1ms

, DRAIN CURRENT (A)

0.1

D

I

10

1

R

LIMIT

DS(ON)

VGS = 10V

SINGLE PULSE

= 94oC/W

R

JA

θ

= 25oC

T

A

10s

DC

0.01

0.01 0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1MHz V

GS

iss

SINGLE PULSE

= 94°C/W

R

JA

θ

= 25°C

T

A

= 0 V

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.001

SINGLE PULSE

R

(t) = r(t) * R

JA

θ

R

= 94°C/W

JA

θ

P(pk)

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1d.

Transient thermal response will change depending on the circuit board design

FDQ7238AS Rev A1 (X)

Typical Characteristics : Q2

SyncFET Schottky Body Diode Characteristics

FDQ7238AS

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238AS Q2.

CURRENT: 0.8A/div

TIME : 12nS/div

Figure 12. FDQ7238AS SyncFET body diode reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6670A).

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power dissipated in the device.

0.1

0.01

0.001

0.0001

, REVERSE LEAKAGE CURRENT (A)

DSS

I

0.00001 0 5 10 15 20 25 30

TA = 125oC

TA = 100oC

TA = 25oC

V

, REVERSE VOLTAGE (V)

DS

Figure 14. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

CURRENT: 0.4A/div

TIME : 12nS/div

Figure 13. Non-SyncFET (FDS6670A) body

diode reverse recovery characteristic.

FDQ7238AS Rev A 1(X)

Typical Characteristics: Q1

FDQ7238AS

50

VGS = 10V

6.0V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

00.511.522.5

4.0V

4.5V

3.5V

3.0V

2.5V

VDS, DRAIN-SOURCE VOLTAGE (V)

2.6

VGS = 3.0V

2.2

1.8

, NORMALIZED

DS(ON)

R

DRAIN-SOURCE ON-RESISTANCE

3.5V

1.4

1

0.6 0 1020304050

4.0V

4.5V

, DRAIN CURRENT (A)

I

D

6.0V

Figure 15. On-Region Characteristics. Figure 16. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5

ID = 11A

1.4

1.3

1.2

1.1

, NORMALIZED

DS(ON)

R

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8

= 10V

V

GS

1

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 17. On-Resistance Variation with

Temperature.

0.036

0.032

0.028

0.024

0.02

, ON-RESISTANCE (OHM)

0.016

TA = 25oC

DS(ON)

R

0.012

0.008 246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

Figure 18. On-Resistance Variation with

Gate-to-Source Voltage.

10.0V

ID = 5.5A

50

VDS = 5V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

11.522.533.54

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

-55oC

25oC

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 19. Transfer Characteristics. Figure 20. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDQ7238AS Rev A1 (X)

Typical Characteristics: Q1

FDQ7238AS

10

ID = 11A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 4 8 121620

VDS = 10V

, GATE CHARGE (nC)

Q

g

20V

15V

1500

1200

C

900

600

CAPACITANCE (pF)

300

C

rss

0

0 5 10 15 20 25 30

C

oss

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

iss

Figure 21. Gate Charge Characteristics. Figure 22. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A)

D

I

0.01

VGS = 10V

SINGLE PULSE

0.1

= 118oC/W

R

JA

θ

= 25oC

T

A

0.01 0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

1s

100µs

1ms

10ms

100ms

50

SINGLE PULSE R

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

θ

Figure 23. Maximum Safe Operating Area. Figure 24. Single Pulse Maximum

Power Dissipation.

= 118°C/W

JA

= 25°C

T

A

f = 1MHz

= 0 V

V

GS

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.001

SINGLE PULSE

R

(t) = r(t) * R

JA

θ

R

= 118 °C/W

JA

θ

P(pk)

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 25. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c

Transient thermal response will change depending on the circuit board design.

FDQ7238AS Rev A1 (X)

TRADEMARKS

®

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.

®

ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

®

EfficentMax™ EZSWITCH™ *

™

®

Fairchild Fairchild Semiconductor FACT Quiet Series™

®

FACT

®

FAST FastvCore™ FlashWriter

®

*

®

* EZSWITCH™ and FlashWriter

FPS™ F-PFS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

PDP-SPM™ Power-SPM™ PowerTrench

SM

Programmable Active Droop™ QFET

®

QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™

®

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic

®

TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

in the labeling, can be reasonably expected to result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

Obsolete Not In Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I34

FDQ7238AS Rev.A1(X)